| Continuous analytic IV model for surrounding-gate MOSFETs D Jimenez, B Iniguez, J Sune, LF Marsal, J Pallares, J Roig, D Flores IEEE Electron Device Letters 25 (8), 571-573, 2004 | 352 | 2004 |
| Explicit continuous model for long-channel undoped surrounding gate MOSFETs B Iniguez, D Jimenez, J Roig, HA Hamid, LF Marsal, J Pallarès IEEE Transactions on Electron Devices 52 (8), 1868-1873, 2005 | 267 | 2005 |
| Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs H Abd El Hamid, B Iñíguez, JR Guitart IEEE transactions on electron devices 54 (3), 572-579, 2007 | 183 | 2007 |
| Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs H Abd El Hamid, JR Guitart, B Iñíguez IEEE Transactions on Electron Devices 54 (6), 1402-1408, 2007 | 137 | 2007 |
| An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric P Moens, C Liu, A Banerjee, P Vanmeerbeek, P Coppens, H Ziad, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 128 | 2014 |
| Explicit analytical charge and capacitance models of undoped double-gate MOSFETs O Moldovan, D Jimenez, JR Guitart, FA Chaves, B Iniguez IEEE Transactions on Electron Devices 54 (7), 1718-1724, 2007 | 109 | 2007 |
| Analytical switching loss model for superjunction MOSFET with capacitive nonlinearities and displacement currents for DC–DC power converters I Castro, J Roig, R Gelagaev, B Vlachakis, F Bauwens, DG Lamar, ... IEEE Transactions on Power Electronics 31 (3), 2485-2495, 2015 | 96 | 2015 |
| Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs M Fernández, X Perpiñà, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ... IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017 | 94 | 2017 |
| A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs H Abd El Hamid, JR Guitart, V Kilchytska, D Flandre, B Iñiguez IEEE transactions on electron devices 54 (9), 2487-2496, 2007 | 78 | 2007 |
| Origin of AnomalousHysteresis in Resonant Converters With Superjunction FETs J Roig, F Bauwens IEEE Transactions on Electron Devices 62 (9), 3092-3094, 2015 | 67 | 2015 |
| Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs O Moldovan, B Iniguez, D Jiménez, J Roig IEEE transactions on electron devices 54 (1), 162-165, 2006 | 64 | 2006 |
| P-GaN HEMTs drain and gate current analysis under short-circuit M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack IEEE Electron Device Letters 38 (4), 505-508, 2017 | 61 | 2017 |
| Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo Microelectronics Reliability 45 (3-4), 493-498, 2005 | 43 | 2005 |
| Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET H Abd-Elhamid, B Iniguez, D Jiménez, J Roig, J Pallarès, LF Marsal Solid-state electronics 50 (5), 805-812, 2006 | 42 | 2006 |
| Measurements for Superjunction MOSFETs: Limitations and Opportunities GD Zulauf, J Roig-Guitart, JD Plummer, JM Rivas-Davila IEEE Transactions on Electron Devices 66 (1), 578-584, 2018 | 41 | 2018 |
| A numerical study of field plate configurations in RF SOI LDMOS transistors I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo Solid-State Electronics 50 (2), 155-163, 2006 | 40 | 2006 |
| Study of novel techniques for reducing self-heating effects in SOI power LDMOS J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán Solid-State Electronics 46 (12), 2123-2133, 2002 | 38 | 2002 |
| Monolithic integration of a 5-MHz GaN half-bridge in a 200-V GaN-on-SOI process: Programmable dv/dt control and floating high-voltage level-shifter WL Jiang, SK Murray, MS Zaman, H De Vleeschouwer, J Roig, P Moens, ... 2021 IEEE applied power electronics conference and exposition (APEC), 728-734, 2021 | 31 | 2021 |
| An Investigation into the Causes of COSS Losses in GaN-on-Si HEMTs J Zhuang, G Zulauf, J Roig, JD Plummer, J Rivas-Davila 2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL), 1-7, 2019 | 31 | 2019 |
| Origins of Soft-Switching Coss Losses in SiC Power MOSFETs and Diodes for Resonant Converter Applications Z Tong, J Roig-Guitart, T Neyer, JD Plummer, JM Rivas-Davila IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020 | 29 | 2020 |
David FloresInvestigador Científico CSICVerified email at imb-cnm.csic.es
