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Tanuj Saxena
Tanuj Saxena
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Cited by
Cited by
Year
Deep-ultraviolet tailored-and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes
X Yan, M Shatalov, T Saxena, MS Shur
Journal of Applied Physics 113 (16), 2013
312013
Development of deep UV LEDs and current problems in material and device technology
M Shatalov, R Jain, T Saxena, A Dobrinsky, M Shur
Semiconductors and Semimetals 96, 45-83, 2017
282017
CdS based novel photo-impedance light sensor
T Saxena, SL Rumyantsev, PS Dutta, M Shur
Semiconductor Science and Technology 29 (2), 025002, 2014
272014
12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination
QJ Zhang, AK Agarwal, C Capell, L Cheng, MJ O'Loughlin, AA Burk, ...
Materials Science Forum 717, 1151-1154, 2012
272012
Controlled synthesis of single-crystalline ZnO nanoflakes on arbitrary substrates at ambient conditions
PK Vabbina, M Karabiyik, C Al-Amin, N Pala, S Das, W Choi, T Saxena, ...
Part. Part. Syst. Charact 31 (2), 190-194, 2014
242014
Optical triggering of 12 kV, 100 A 4H-SiC thyristors
SL Rumyantsev, ME Levinshtein, MS Shur, T Saxena, QJ Zhang, ...
Semiconductor science and technology 27 (1), 015012, 2011
192011
Microcircuit modeling and simulation beyond Ohm’s law
T Saxena, DCY Chek, MLP Tan, VK Arora
IEEE Transactions on Education 54 (1), 34-40, 2010
182010
Resistance blow-up effect in micro-circuit engineering
MLP Tan, T Saxena, VK Arora
Solid-State Electronics 54 (12), 1617-1624, 2010
162010
Towards ultimate scaling of LDMOS with Ultralow Specific On-resistance
S Mehrotra, L Radic, B Grote, T Saxena, G Qin, V Khemka, T Thomas, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
112020
Termination design for trench superjunction power MOSFET
G Qin, V Khemka, L Radic, B Grote, T Saxena, M Zitouni
US Patent 10,103,257, 2018
102018
Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit
SL Rumyantsev, ME Levinshtein, T Saxena, MS Shur, L Cheng, ...
Semiconductor Science and Technology 29 (11), 115003, 2014
92014
Low threshold for optical damage in AlGaN epilayers and heterostructures
T Saxena, G Tamulaitis, M Shatalov, J Yang, R Gaska, MS Shur
Journal of Applied Physics 114 (20), 2013
92013
Spectral dependence of carrier lifetime in high aluminum content AlGaN epitaxial layers
T Saxena, S Nargelas, J Mickevičius, O Kravcov, G Tamulaitis, M Shur, ...
Journal of Applied Physics 118 (8), 2015
82015
Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content
T Saxena, M Shur, S Nargelas, Ž Podlipskas, R Aleksiejūnas, ...
Optics Express 23 (15), 19646-19655, 2015
82015
Charge balance and UIS robustness of trench field plate power MOSFETs
T Saxena, C Torrent, V Khemka, G Qin, M Gibson
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
62022
Integrated termination ballast to mitigate avalanche hotspots in trench field plate power MOSFETs
T Saxena, C Torrent, V Khemka, G Qin, M Zitouni
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
62021
Tunable photocapacitive optical radiation sensor enabled radio transmitter and applications thereof
T Saxena, PS Dutta, SL Roumiantsev, M Shur
US Patent 10,323,980, 2019
62019
Floating Body Ring Termination for Trench Field Plate Power MOSFETs
T Saxena, V Khemka, B Grote, G Qin, M Zitouni
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
52020
High current (1225a) optical triggering of 18-kv 4h-SiC thyristor in purely inductive load circuit
S Rumyantsev, M Levinshtein, T Saxena, M Shur, L Cheng, J Palmour
Materials Science Forum 821, 893-896, 2015
52015
Silicon-on-insulator photoimpedance sensor using capacitance dispersion
T Saxena, M Shur
IEEE Transactions on Electron Devices 63 (8), 3236-3240, 2016
32016
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Articles 1–20