| Negative thermal expansion due to negative area compressibility in TlGaSe2 semiconductor with layered crystalline structure MHY Seyidov, RA Suleymanov Journal of Applied Physics 108 (6), 2010 | 49 | 2010 |
| The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2 and TlGaSe2 SS Babaev, E Başaran, TG Mammadov, FA Mikailov, FM Salehli, ... Journal of Physics: Condensed Matter 17 (12), 1985, 2005 | 45 | 2005 |
| Dielectric susceptibility behaviour in the incommensurate phase of TlInS2 FA Mikailov, E Başaran, TG Mammadov, MY Seyidov, E Şentürk Physica B: Condensed Matter 334 (1-2), 13-20, 2003 | 39 | 2003 |
| Memory effect in ferroelectric-semiconductor with incommensurate phase TlGaSe2 VP Aliyev, SS Babayev, TG Mammadov, MHY Seyidov, RA Suleymanov Solid state communications 128 (1), 25-28, 2003 | 34 | 2003 |
| Model of a sequence of structural phase transitions in a layer TlInS2 crystal RA Suleimanov, MY Seidov, FM Salaev, FA Mikailov Physics of the solid state 35 (2), 177-180, 1993 | 33 | 1993 |
| Ultrasonic investigations of phase transitions in TlInS2 and TlGaSe2 layered crystals YV Ilisavskii, VM Sternin, RA Suleimanov, FM Salaev, M Seidov Soviet physics. Solid state 33 (1), 57-60, 1991 | 31 | 1991 |
| The effect of thermal annealing on impurity states in ferroelectric-semiconductor TlGaSe2 within the incommensurate phase MHY Seyidov, E Coskun, Y Sahin, R Khamoev, RA Suleymanov Semiconductor science and technology 21 (2), 171, 2006 | 26 | 2006 |
| Elastic properties of layered crystals TlInS2 and TlGaSe2 RA Suleymanov, MY Seidov, FM Salaev Fiz. Tverd. Tela. 33, 1797-1800, 1991 | 25* | 1991 |
| Electret states and current oscillations in the ferroelectric semiconductor TlGaSe2 MHY Seyidov, Y Sahin, D Erbahar, RA Suleymanov physica status solidi (a) 203 (15), 3781-3787, 2006 | 24 | 2006 |
| The model of sequence of phase transitions in layered TlInS2 crystals RA Suleymanov, MY Seidov, FM Salayev, MA Mikailov Fiz. Tverd. Tela 35, 348-354, 1993 | 24 | 1993 |
| Dielectric spectroscopy and nonequilibrium phase transitions in TlGaSe2 layered crystals F Salehli, Y Bakış, MHY Seyidov, RA Suleymanov Semiconductor science and technology 22 (8), 843, 2007 | 22 | 2007 |
| Neutron diffraction study of the crystal structure of TlInSe2 at high pressure NT Mamedov, SH Jabarov, DP Kozlenko, NA Ismayilova, MY Seyidov, ... International Journal of Modern Physics B 33 (15), 1950149, 2019 | 21 | 2019 |
| Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor MHY Seyidov, FA Mikailzade, T Uzun, AP Odrinsky, E Yakar, VB Aliyeva, ... Physica B: Condensed Matter 483, 82-89, 2016 | 19 | 2016 |
| Photoinduced current transient spectroscopy of TlInS2 layered crystals doped with Er, B, and Tb impurities MHY Seyidov, RA Suleymanov, AP Odrinsky, AI Nadjafov, TG Mammadov, ... Japanese journal of applied physics 50 (5S2), 05FC08, 2011 | 18 | 2011 |
| Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor MHY Seyidov, RA Suleymanov, FA Mikailzade, EO Kargın, AP Odrinsky Journal of Applied Physics 117 (22), 2015 | 17 | 2015 |
| MODEL OF PHASE-TRANSITION SEQUENCES IN THE TLINS2 LAYERED CRYSTAL RA Suleimanov, MY Seidov, FM Salaev, FA Mikailov FIZIKA TVERDOGO TELA 35 (2), 348-354, 1993 | 17 | 1993 |
| Mechanisms of current flow in p-TlGaSe2 single crystals MHY Seyidov, Y Sahin, MH Aslan, RA Suleymanov Semiconductor science and technology 21 (12), 1633, 2006 | 16 | 2006 |
| Electret states and the phase transition in a surface layer of the TlGaSe2 ferroelectric semiconductor MHY Seyidov, RA Suleymanov, R Khamoev Physics of the Solid State 48, 1346-1350, 2006 | 16 | 2006 |
| Electrical properties of the layered single crystals TlGaSe2 and TlInS2 AK Fedotov, MI Tarasik, IA Svito, P Zhukowski, TN Koltunowicz, ... Electrical Review, R. 88, N. 7a (2012) 301–304, 2012 | 15 | 2012 |
| Origin of structural instability in TlInS2 (1− x) Se2x solid solutions MHY Seyidov, RA Suleymanov, F Salehli Physica Scripta 84 (1), 015601, 2011 | 15 | 2011 |
