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SOKRATES T. PANTELIDES
SOKRATES T. PANTELIDES
Professor of Physics, Vanderbilt University
Verified email at vanderbilt.edu
Title
Cited by
Cited by
Year
Bandgap Engineering of Strained Monolayer and Bilayer MoS2
HJ Conley, B Wang, JI Ziegler, RF Haglund Jr, ST Pantelides, KI Bolotin
Nano letters 13 (8), 3626-3630, 2013
24762013
Vertical and in-plane heterostructures from WS2/MoS2 monolayers
Y Gong, J Lin, X Wang, G Shi, S Lei, Z Lin, X Zou, G Ye, R Vajtai, ...
Nature materials 13 (12), 1135-1142, 2014
23132014
Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy
OL Krivanek, MF Chisholm, V Nicolosi, TJ Pennycook, GJ Corbin, ...
Nature 464 (7288), 571-574, 2010
14532010
First-principles calculation of transport properties of a molecular device
M Di Ventra, ST Pantelides, ND Lang
Physical review letters 84 (5), 979, 2000
11612000
Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction
G Ye, Y Gong, J Lin, B Li, Y He, ST Pantelides, W Zhou, R Vajtai, ...
Nano letters 16 (2), 1097-1103, 2016
11562016
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ...
IEEE Electron Device Letters 22 (4), 176-178, 2001
8422001
Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes
F Liu, L You, KL Seyler, X Li, P Yu, J Lin, X Wang, J Zhou, H Wang, H He, ...
Nature communications 7 (1), 1-6, 2016
8182016
The electronic structure of impurities and other point defects in semiconductors
ST Pantelides
Reviews of Modern Physics 50 (4), 797, 1978
7891978
Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
Y Wang, L Li, W Yao, S Song, JT Sun, J Pan, X Ren, C Li, E Okunishi, ...
Nano letters 15 (6), 4013-4018, 2015
6642015
Theory of hydrogen diffusion and reactions in crystalline silicon
CG Van de Walle, PJH Denteneer, Y Bar-Yam, ST Pantelides
Physical review B 39 (15), 10791, 1989
6211989
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ...
Applied Physics Letters 76 (13), 1713-1715, 2000
5892000
Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide
Y Gong, Z Liu, AR Lupini, G Shi, J Lin, S Najmaei, Z Lin, AL Elías, ...
Nano letters 14 (2), 442-449, 2014
5762014
Control of Doping by Impurity Chemical Potentials: Predictions for -Type ZnO
Y Yan, SB Zhang, ST Pantelides
Physical Review Letters 86 (25), 5723, 2001
5122001
Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy
AR Klots, AKM Newaz, B Wang, D Prasai, H Krzyzanowska, J Lin, ...
Scientific reports 4 (1), 6608, 2014
4772014
Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates
X Lu, MIB Utama, J Lin, X Gong, J Zhang, Y Zhao, ST Pantelides, J Wang, ...
Nano letters 14 (5), 2419-2425, 2014
4332014
Microscopic theory of atomic diffusion mechanisms in silicon
R Car, PJ Kelly, A Oshiyama, ST Pantelides
Physica B+ C 127 (1-3), 401-407, 1984
4101984
Defects in amorphous silicon: A new perspective
ST Pantelides
Physical review letters 57 (23), 2979, 1986
4051986
First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe
CG Van de Walle, DB Laks, GF Neumark, ST Pantelides
Physical Review B 47 (15), 9425, 1993
3981993
Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphous and
ST Pantelides, WA Harrison
Physical Review B 13 (6), 2667, 1976
3941976
Native defects and self-compensation in ZnSe
DB Laks, CG Van de Walle, GF Neumark, PE Blöchl, ST Pantelides
Physical Review B 45 (19), 10965, 1992
3881992
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