| High Breakdown (> 1500 V) AIGaN/GaN HEMTs by Substrate-Transfer Technology B Lu, T Palacios IEEE electron device letters 31 (9), 951-953, 2010 | 280 | 2010 |
| Tri-gate normally-off GaN power MISFET B Lu, E Matioli, T Palacios Electron Device Letters, IEEE 33 (3), 360-362, 2012 | 269 | 2012 |
| Extraction of Dynamic On-Resistance in GaN Transistors: Under Soft-and Hard-Switching Conditions B Lu, T Palacios, D Risbud, S Bahl, DI Anderson Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE, 1-4, 2011 | 149 | 2011 |
| High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor B Lu, OI Saadat, T Palacios Electron Device Letters, IEEE 31 (9), 990-992, 2010 | 128 | 2010 |
| Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors F Gao, B Lu, L Li, S Kaun, JS Speck, CV Thompson, T Palacios Applied Physics Letters 99 (22), 223506, 2011 | 98 | 2011 |
| A Technology Overview of the PowerChip Development Program M Araghchini, J Chen, V Doan-Nguyen, D Harburg, D Jin, J Kim, M Kim, ... IEEE, 2013 | 95 | 2013 |
| Schottky-drain technology for AlGaN/GaN high-electron mobility transistors B Lu, EL Piner, T Palacios Electron Device Letters, IEEE 31 (4), 302-304, 2010 | 78 | 2010 |
| An etch-stop barrier structure for GaN high-electron-mobility transistors B Lu, M Sun, T Palacios Electron Device Letters, IEEE 34 (3), 369-371, 2013 | 77 | 2013 |
| An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors B Lu, M Sun, T Palacios IEEE Electron Device Letters 34 (3), 369-371, 2013 | 77 | 2013 |
| Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure E Matioli, B Lu, T Palacios Electron Devices, IEEE Transactions on 60 (10), 3365-3370, 2013 | 66 | 2013 |
| Impact of moisture and fluorocarbon passivation on the current collapse of AlGaN/GaN HEMTs F Gao, D Chen, B Lu, HL Tuller, CV Thompson, S Keller, UK Mishra, ... Electron Device Letters, IEEE 33 (10), 1378-1380, 2012 | 56 | 2012 |
| Comparative breakdown study of mesa-and ion-implantation-isolated AlGaN/GaN high-electron-mobility transistors on Si substrate M Sun, HS Lee, B Lu, D Piedra, T Palacios Applied Physics Express 5 (7), 074202, 2012 | 54 | 2012 |
| Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate B Lu, EL Piner, T Palacios Device Research Conference (DRC), 2010, 193-194, 2010 | 49 | 2010 |
| GaN-on-Si technology, a new approach for advanced devices in energy and communications JW Chung, K Ryu, B Lu, T Palacios Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the …, 2010 | 45 | 2010 |
| Impact of GaN channel scaling in InAlN/GaN HEMTs DS Lee, B Lu, M Azize, X Gao, S Guo, D Kopp, P Fay, T Palacios Electron Devices Meeting (IEDM), 2011 IEEE International, 19.2. 1-19.2. 4, 2011 | 29 | 2011 |
| Dual-gate normally-off nitride transistors B Lu, T Palacios US Patent 8,587,031, 2013 | 28 | 2013 |
| Semiconductor structure and recess formation etch technique B Lu, M Sun, TA Palacios US Patent 9,570,600, 2017 | 27 | 2017 |
| Semiconductor structure with a spacer layer M Azize, B Lu, L Xia US Patent 9,536,984, 2017 | 26 | 2017 |
| III-Nitride semiconductors with recess regions and methods of manufacture B Lu, L Xia US Patent 9,614,069, 2017 | 21 | 2017 |
| Electric field management for a group III-nitride semiconductor device B Lu, T Palacios, L Xia, M Azize US Patent 9,455,342, 2016 | 21 | 2016 |
Tomás PalaciosMITVerified email at mit.edu
