Xiao Shen
Xiao Shen
Associate Professor of Physics, University of Memphis
Verified email at memphis.edu - Homepage
Title
Cited by
Cited by
Year
Photocatalytic water oxidation at the GaN (101̅0)− water interface
X Shen, YA Small, J Wang, PB Allen, MV Fernandez-Serra, MS Hybertsen, ...
The Journal of Physical Chemistry C 114 (32), 13695-13704, 2010
952010
Identification of a major cause of endemically poor mobilities in SiC/SiO2 structures
X Shen, ST Pantelides
Applied Physics Letters 98 (5), 053507-053507-3, 2011
872011
Wire versus tube: stability of small one-dimensional ZnO nanostructures
X Shen, PB Allen, JT Muckerman, JW Davenport, JC Zheng
Nano Letters 7 (8), 2267-2271, 2007
862007
Phosphorous passivation of the SiO2/4H–SiC interface
YK Sharma, AC Ahyi, T Issacs-Smith, X Shen, ST Pantelides, X Zhu, ...
Solid-State Electronics 68, 103-107, 2012
752012
Size- and Shape-Controlled Synthesis and Properties of Magnetic-Plasmonic Core-Shell Nanoparticles
E Kwizera, E Chaffin, X Shen, J Chen, Q Zou, Z Wu, Z Gai, S Bhana, ...
Journal of Physical Chemistry C, 2016
742016
Water adsorption on the GaN (101̅0) nonpolar surface
X Shen, PB Allen, MS Hybertsen, JT Muckerman
Journal of Physical Chemistry C 113 (9), 3365-3368, 2009
622009
Nanostructured cobalt oxide and cobalt sulfide for flexible, high performance and durable supercapacitors
S Aloqayli, CK Ranaweera, Z Wang, K Siam, PK Kahol, P Tripathi, ...
Energy Storage Materials 8, 68-76, 2017
542017
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ...
Applied Physics Letters 99 (20), 203501, 2011
472011
Defect Luminescence from Wurtzite CuInS2 Nanocrystals: Combined Experimental and Theoretical Analysis
A Leach, X Shen, A Faust, M Cleveland, A La Croix, U Banin, ...
Journal of Physical Chemistry C 120, 5207, 2016
422016
Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures
X Shen, EX Zhang, CX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, ...
Applied Physics Letters 98 (6), 063507, 2011
412011
Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases
S Xu, X Shen, KA Hallman, RF Haglund Jr., ST Pantelides
Physical Review B 95, 125105, 2017
382017
Excess carbon in silicon carbide
X Shen, MP Oxley, Y Puzyrev, BR Tuttle, G Duscher, ST Pantelides
Journal of Applied Physics 108 (12), 123705, 2010
372010
Reliability of III–V devices–The defects that cause the trouble
ST Pantelides, Y Puzyrev, X Shen, T Roy, S DasGupta, BR Tuttle, ...
Microelectronic Engineering 90, 3-8, 2012
362012
Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices
CX Zhang, EX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ...
IEEE Transactions on Nuclear Science 58 (6), 2925-2929, 2011
342011
Origins of low-frequency noise and interface traps in 4H-SiC MOSFETs
CX Zhang, EX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ...
IEEE Electron Device Letters 34 (1), 117-119, 2012
312012
Interlaced crystals having a perfect Bravais lattice and complex chemical order revealed by real-space crystallography
X Shen, EA Hernández-Pagan, W Zhou, YS Puzyrev, JC Idrobo, ...
Nature communications 5, 5431, 2014
302014
Bias-temperature instabilities in 4H-SiC metal–oxide–semiconductor capacitors
EX Zhang, CX Zhang, DM Fleetwod, RD Schrimpf, S Dhar, SH Ryu, ...
IEEE Transactions on Device and Materials Reliability 12 (2), 391-398, 2012
302012
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs
R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability, 2018
282018
Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN high electron mobility transistors
R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ...
IEEE Transactions on Nuclear Science 64, 218, 2016
282016
Variability of structural and electronic properties of bulk and monolayer Si2Te3
X Shen, Y Puzyrev, C Combs, S Pantelides
Applied Physics Letters 109, 113104, 2016
262016
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