| Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates N Ketteniss, LR Khoshroo, M Eickelkamp, M Heuken, H Kalisch, ... Semiconductor science and technology 25 (7), 075013, 2010 | 91 | 2010 |
| Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan Applied Physics Express 4 (11), 114102, 2011 | 90 | 2011 |
| Polarization-engineered enhancement-mode high-electron-mobility transistors using quaternary AlInGaN barrier layers B Reuters, A Wille, N Ketteniss, H Hahn, B Holländer, M Heuken, ... Journal of electronic materials 42, 826-832, 2013 | 49 | 2013 |
| InAlN/GaN HEMTs on sapphire substrate with 2.9-W/mm output power density at 18 GHz F Lecourt, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ... IEEE electron device letters 32 (11), 1537-1539, 2011 | 49 | 2011 |
| Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT F Lecourt, A Agboton, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ... IEEE Electron Device Letters 34 (8), 978-980, 2013 | 47 | 2013 |
| First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET H Hahn, B Reuters, A Wille, N Ketteniss, F Benkhelifa, O Ambacher, ... Semiconductor Science and Technology 27 (5), 055004, 2012 | 43 | 2012 |
| Growth studies on quaternary AlInGaN layers for HEMT application B Reuters, A Wille, B Holländer, E Sakalauskas, N Ketteniss, C Mauder, ... Journal of electronic materials 41, 905-909, 2012 | 28 | 2012 |
| Influence of mask material and process parameters on etch angle in a chlorine-based GaN dry etch H Hahn, JB Gruis, N Ketteniss, F Urbain, H Kalisch, A Vescan Journal of Vacuum Science & Technology A 30 (5), 2012 | 24 | 2012 |
| Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices N Ketteniss, A Askar, B Reuters, A Noculak, B Holländer, H Kalisch, ... Semiconductor science and technology 27 (5), 055012, 2012 | 23 | 2012 |
| Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors M Eickelkamp, M Weingarten, L Rahimzadeh Khoshroo, N Ketteniss, ... Journal of Applied Physics 110 (8), 2011 | 19 | 2011 |
| Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties H Behmenburg, LR Khoshroo, M Eickelkamp, C Mauder, M Fieger, ... physica status solidi c 6 (S2 2), S1041-S1044, 2009 | 19 | 2009 |
| Quaternary nitride heterostructure field effect transistors L Rahimzadeh Khoshroo, N Ketteniss, C Mauder, H Behmenburg, ... physica status solidi c 7 (7‐8), 2001-2003, 2010 | 18 | 2010 |
| Quaternary enhancement-mode HFET with in situ SiN passivation N Ketteniss, H Behmenburg, H Hahn, A Noculak, B Hollander, H Kalisch, ... IEEE electron device letters 33 (4), 519-521, 2012 | 17 | 2012 |
| In situ SiN passivation of AlInN/GaN heterostructures by MOVPE H Behmenburg, LR Khoshroo, C Mauder, N Ketteniss, KH Lee, ... physica status solidi c 7 (7‐8), 2104-2106, 2010 | 17 | 2010 |
| Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics H Hahn, J Achenbach, N Ketteniss, A Noculak, H Kalisch, A Vescan Solid-state electronics 67 (1), 90-93, 2012 | 15 | 2012 |
| RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate F Lecourt, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ... Electronics letters 47 (3), 212-214, 2011 | 14 | 2011 |
| The effect of gate length variation on InAlGaN/GaN HFET device characteristics N Ketteniss, H Behmenburg, F Lecourt, N Defrance, V Hoel, JC De Jaeger, ... Semiconductor Science and Technology 27 (3), 035009, 2012 | 9 | 2012 |
| Study on growth and electrical performance of double‐heterostructure AlGaN/GaN/AlGaN field‐effect‐transistors A Vescan, H Hardtdegen, N Ketteniß, M Eickelkamp, A Noculak, ... physica status solidi c 6 (S2 2), S1003-S1006, 2009 | 8 | 2009 |
| Processing approaches of AlGaN/GaN Metal Insulator Semiconductor Hetero Field Effect Transistors (MISHFET) on Si (111) substrates M Eickelkamp, N Ketteniß, C Lautensack, A Noculak, H Kalisch, ... physica status solidi c 6 (S2 2), S1033-S1036, 2009 | 8 | 2009 |
| Quaternary nitride enhancement mode HFET with 260 mS/mm and a threshold voltage of+ 0.5 V N Ketteniss, B Reuters, B Holländer, H Hahn, H Kalisch, A Vescan 70th Device Research Conference, 161-162, 2012 | 7 | 2012 |
