| Ultranarrow luminescence lines from single quantum dots M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ... Physical Review Letters 74 (20), 4043, 1995 | 983 | 1995 |
| Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth NN Ledentsov, VA Shchukin, M Grundmann, N Kirstaedter, J Böhrer, ... Physical Review B 54 (12), 8743, 1996 | 651 | 1996 |
| Radiative recombination in type‐II GaSb/GaAs quantum dots F Hatami, NN Ledentsov, M Grundmann, J Böhrer, F Heinrichsdorff, ... Applied physics letters 67 (5), 656-658, 1995 | 618* | 1995 |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ... Applied physics letters 74 (19), 2815-2817, 1999 | 512 | 1999 |
| Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers N Kirstaedter, OG Schmidt, NN Ledentsov, D Bimberg, VM Ustinov, ... Applied physics letters 69 (9), 1226-1228, 1996 | 412 | 1996 |
| InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm JA Lott, NN Ledentsov, VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, ... Electronics Letters 36 (16), 1384-1385, 2000 | 344 | 2000 |
| Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots R Heitz, M Grundmann, NN Ledentsov, L Eckey, M Veit, D Bimberg, ... Applied Physics Letters 68 (3), 361-363, 1996 | 339 | 1996 |
| Quantum dot lasers VM Ustinov Oxford University Press, 2003 | 323 | 2003 |
| Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing NN Ledentsov, M Grundmann, N Kirstaedter, O Schmidt, R Heitz, J Böhrer, ... Solid-State Electronics 40 (1-8), 785-798, 1996 | 310 | 1996 |
| Quantum dot lasers: breakthrough in optoelectronics D Bimberg, M Grundmann, F Heinrichsdorff, NN Ledentsov, VM Ustinov, ... Thin solid films 367 (1-2), 235-249, 2000 | 289 | 2000 |
| Quantum-dot heterostructure lasers NN Ledentsov, M Grundmann, F Heinrichsdorff, D Bimberg, VM Ustinov, ... IEEE Journal of Selected Topics in Quantum Electronics 6 (3), 439-451, 2000 | 273 | 2000 |
| Tuning quantum dot properties by activated phase separation of an InGa (Al) As alloy grown on InAs stressors MV Maximov, AF Tsatsul’nikov, BV Volovik, DS Sizov, YM Shernyakov, ... Physical Review B 62 (24), 16671, 2000 | 256 | 2000 |
| GaAs-based long-wavelength lasers VM Ustinov, AE Zhukov Semiconductor science and technology 15 (8), R41, 2000 | 251 | 2000 |
| High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range NN Ledentsov, AR Kovsh, AE Zhukov, NA Maleev, SS Mikhrin, ... Electronics Letters 39 (15), 1126-1128, 2003 | 215 | 2003 |
| Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing AO Kosogov, P Werner, U Gösele, NN Ledentsov, D Bimberg, VM Ustinov, ... Applied Physics Letters 69 (20), 3072-3074, 1996 | 197 | 1996 |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiency AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil'Ev, ... Electronics Letters 38 (19), 1, 2002 | 193 | 2002 |
| Optical properties of heterostructures with InGaAs-GaAs quantum clusters NN Ledentsov, VM Ustinov, AY Egorov, AE Zhukov, MV Maksimov, ... Semiconductors 28 (8), 832-834, 1994 | 190 | 1994 |
| InAs/GaAs quantum dots radiative recombination from zero‐dimensional states M Grundmann, NN Ledentsov, R Heitz, L Eckey, J Christen, J Böhrer, ... physica status solidi (b) 188 (1), 249-258, 1995 | 187 | 1995 |
| High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser EU Rafailov, MA Cataluna, W Sibbett, ND Il’Inskaya, YM Zadiranov, ... Applied Physics Letters 87 (8), 081107, 2005 | 185 | 2005 |
| 1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition YM Shernyakov, DA Bedarev, EY Kondrat'eva, PS Kop'ev, AR Kovsh, ... Electronics Letters 35 (11), 898-900, 1999 | 172 | 1999 |
