| Atomic layer deposition of doped ZnO films Z Gao, P Banerjee Journal of Vacuum Science & Technology A 37 (5), 2019 | 77 | 2019 |
| Atmospheric pressure chemical vapor deposition of methylammonium bismuth iodide thin films X Chen, Y Myung, A Thind, Z Gao, B Yin, M Shen, SB Cho, P Cheng, ... Journal of materials chemistry A 5 (47), 24728-24739, 2017 | 46 | 2017 |
| Disentangling photochromism and electrochromism by blocking hole transfer at the electrolyte interface Y Wang, J Kim, Z Gao, O Zandi, S Heo, P Banerjee, DJ Milliron Chemistry of Materials 28 (20), 7198-7202, 2016 | 30 | 2016 |
| Standing and sitting adlayers in atomic layer deposition of ZnO Z Gao, F Wu, Y Myung, R Fei, R Kanjolia, L Yang, P Banerjee Journal of Vacuum Science & Technology A 34 (1), 2016 | 29 | 2016 |
| Self-Catalyzed, Low-Temperature Atomic Layer Deposition of Ruthenium Metal Using Zero-Valent Ru(DMBD)(CO)3 and Water Z Gao, D Le, A Khaniya, CL Dezelah, J Woodruff, RK Kanjolia, WE Kaden, ... Chemistry of Materials 31 (4), 1304-1317, 2019 | 27 | 2019 |
| Improving the Passivation of Molybdenum Oxide Hole‐Selective Contacts with 1 nm Hydrogenated Aluminum Oxide Films for Silicon Solar Cells G Gregory, C Feit, Z Gao, P Banerjee, T Jurca, KO Davis physica status solidi (a), 2020 | 24 | 2020 |
| Doping mechanism in transparent, conducting tantalum doped ZnO films deposited using atomic layer deposition Z Gao, Y Myung, X Huang, R Kanjolia, J Park, R Mishra, P Banerjee Advanced Materials Interfaces 3 (21), 1600496, 2016 | 24 | 2016 |
| Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric Z Gao, MF Romero, F Calle IEEE Transactions on Electron Devices 65 (8), 3142-3148, 2018 | 19 | 2018 |
| Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs Z Gao, MF Romero, A Redondo-Cubero, MA Pampillon, E San Andres, ... IEEE Electron Device Letters 38 (5), 611-614, 2017 | 19 | 2017 |
| Identification of active sites for ammonia electrosynthesis on ruthenium L Hu, HS Pillai, C Feit, K Shi, Z Gao, P Banerjee, H Xin, X Feng ACS Energy Letters 7 (12), 4290-4298, 2022 | 12 | 2022 |
| Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration Z Gao, M Meneghini, F Rampazzo, M Rzin, C De Santi, G Meneghesso, ... Microelectronics Reliability 100, 113489, 2019 | 9 | 2019 |
| Phase and stress evolution of Si swarf in the diamond-coated wire sawing of Si ingots S Banerjee, J Yang, J Wu, M Heredia, Z Gao, Y Myung, O Rezvanian, ... The International Journal of Advanced Manufacturing Technology 89, 735-742, 2017 | 8 | 2017 |
| Ultralow Loading Ruthenium on Alumina Monoliths for Facile, Highly Recyclable Reduction of p-Nitrophenol LR Shultz, C Feit, J Stanberry, Z Gao, S Xie, VA Anagnostopoulos, F Liu, ... Catalysts 11 (2), 165, 2021 | 6 | 2021 |
| Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: Effects of hot electrons Z Gao, F Rampazzo, M Meneghini, C De Santi, F Chiocchetta, D Marcon, ... Microelectronics Reliability 114, 113905, 2020 | 6 | 2020 |
| Unraveling delocalized electrons in metal induced gap states from second harmonics Z Gao, MMR Hussain, D De Ceglia, MA Vincenti, A Sarangan, I Agha, ... Applied Physics Letters 111 (16), 2017 | 6 | 2017 |
| Configurational Entropy of Adlayers in Atomic Layer Deposition L Shi, Z Gao, Z Liu, Y Myung, P Banerjee Chemistry of Materials 29 (13), 5458-5462, 2017 | 5 | 2017 |
| Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric Z Gao, MF Romero, MA Pampillón, E San Andrés, F Calle 2015 10th Spanish Conference on Electron Devices (CDE), 1-4, 2015 | 3 | 2015 |
| Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier Z Gao, F Chiocchetta, C De Santi, N Modolo, F Rampazzo, M Meneghini, ... 2022 IEEE International Reliability Physics Symposium (IRPS), P51-1-P51-6, 2022 | 2 | 2022 |
| Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs K Mukherjee, C De Santi, M Rzin, Z Gao, G Meneghesso, M Meneghini, ... Microelectronics Reliability 100, 113464, 2019 | 2 | 2019 |
| Harmonic generation in metal-insulator and metal-insulator-metal nanostructures MMR Hussain, I Agha, Z Gao, D de Ceglia, MA Vincenti, A Sarangan, ... Journal of Applied Physics 125 (10), 2019 | 2 | 2019 |
Parag BanerjeeAssociate Professor in Materials Science & Engineering, University of Central FloridaVerified email at ucf.edu
