| A 3.6 pW/frame· pixel 1.35 V PWM CMOS imager with dynamic pixel readout and no static bias current K Kagawa, S Shishido, M Nunoshita, J Ohta 2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008 | 65 | 2008 |
| Image sensor pixel with on-chip high extinction ratio polarizer based on 65-nm standard CMOS technology K Sasagawa, S Shishido, K Ando, H Matsuoka, T Noda, T Tokuda, ... Optics express 21 (9), 11132-11140, 2013 | 61 | 2013 |
| Polarization analyzing image sensor with on-chip metal wire grid polarizer in 65-nm standard complementary metal oxide semiconductor process S Shishido, T Noda, K Sasagawa, T Tokuda, J Ohta Japanese journal of applied physics 50 (4S), 04DL01, 2011 | 39 | 2011 |
| An 8K4K-resolution 60fps 450ke−-saturation-signal organic-photoconductive-film global-shutter CMOS image sensor with in-pixel noise canceller K Nishimura, S Shishido, Y Miyake, M Yanagida, Y Satou, M Shouho, ... 2018 IEEE International Solid-State Circuits Conference-(ISSCC), 82-84, 2018 | 30 | 2018 |
| Optical sensor N Shimasaki, T Tamaki, S Shishido US Patent 10,317,287, 2019 | 20 | 2019 |
| A 2.1-Mpixel organic film-stacked RGB-IR image sensor with electrically controllable IR sensitivity S Machida, S Shishido, T Tokuhara, M Yanagida, T Yamada, M Izuchi, ... IEEE Journal of Solid-State Circuits 53 (1), 229-235, 2017 | 20 | 2017 |
| Advanced features of layered-structure organic-photoconductive-film CMOS image sensor: Over 120 dB wide dynamic range function and photoelectric-conversion-controlled global … K Nishimura, S Shishido, Y Miyake, H Kanehara, Y Sato, J Hirase, Y Sato, ... Japanese Journal of Applied Physics 57 (10), 1002B4, 2018 | 19 | 2018 |
| 6.2 210ke− Saturation signal 3µm-pixel variable-sensitivity global-shutter organic photoconductive image sensor for motion capture S Shishido, Y Miyake, Y Sato, T Tamaki, N Shimasaki, Y Sato, ... 2016 IEEE International Solid-State Circuits Conference (ISSCC), 112-113, 2016 | 19 | 2016 |
| Imaging device S Shishido, M Murakami, K Nishimura US Patent 10,062,718, 2018 | 17 | 2018 |
| Imaging device having a voltage supply circuit supplying potential differences between electrodes of dual imaging cells T Tokuhara, S Shishido, M Yanagida US Patent 10,506,191, 2019 | 16 | 2019 |
| A low-voltage PWM CMOS imager with small pixel size using an in-pixel gate-common comparator K Kagawa, S Shishido, T Sasaki, I Nagahata, M Nunoshita, J Ohta IEICE Electronics Express 4 (8), 271-276, 2007 | 13 | 2007 |
| Solid-state imaging device and imaging device S Shishido, M Higuchi, D Ichiryu, K Nishimura, Y Abe US Patent 9,641,774, 2017 | 12 | 2017 |
| Imaging apparatus including unit pixel, counter electrode, photoelectric conversion layer, and computing circuit S Machida, M Murakami, T Tokuhara, M Yanagida, S Shishido, M Nakata, ... US Patent 10,477,121, 2019 | 8 | 2019 |
| Photodetector N Shimasaki, T Tamaki, S Shishido US Patent 10,453,899, 2019 | 6 | 2019 |
| Solid-state imaging device and camera S Shishido, M Higuchi US Patent 9,282,267, 2016 | 6 | 2016 |
| Imaging apparatus including unit pixel, counter electrode, photoelectric conversion layer, and voltage supply circuit S Machida, T Tokuhara, M Nakata, S Shishido, M Yanagida, M Izuchi US Patent 10,212,379, 2019 | 5 | 2019 |
| Imaging device including photoelectric converter and charge transfer channel S Shishido, R Sakaida, Y Matsunaga US Patent 9,883,131, 2018 | 5 | 2018 |
| CMOS image sensor for recording of intrinsic-optical-signal of the brain S Shishido, Y Oguro, T Noda, K Sasagawa, T Tokuda, J Ohta 2009 International SoC Design Conference (ISOCC), 190-193, 2009 | 5 | 2009 |
| Imaging device S Shishido US Patent 11,381,769, 2022 | 4 | 2022 |
| Imaging device T Tokuhara, Y Miyake, S Shishido US Patent 11,317,043, 2022 | 4 | 2022 |
Jun OhtaProfessor of Nara Institute of Science and Technology (NAIST), IEEE FellowVerified email at ms.naist.jp
