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Innokenty Novikov
Innokenty Novikov
Connector Optics LLC, ITMO University, Ioffe Physical-Technical Institute
Verified email at switch.ioffe.ru
Title
Cited by
Cited by
Year
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers
SS Mikhrin, AR Kovsh, IL Krestnikov, AV Kozhukhov, DA Livshits, ...
Semiconductor science and technology 20 (5), 340, 2005
1912005
MBE-grown metamorphic lasers for applications at telecom wavelengths
NN Ledentsov, VA Shchukin, T Kettler, K Posilovic, D Bimberg, ...
Journal of crystal growth 301, 914-922, 2007
662007
6-mW single-mode high-speed 1550-nm wafer-fused VCSELs for DWDM application
AV Babichev, LY Karachinsky, II Novikov, AG Gladyshev, SA Blokhin, ...
IEEE Journal of Quantum Electronics 53 (6), 1-8, 2017
612017
High-power single mode (> 1W) continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence
II Novikov, NY Gordeev, YM Shernyakov, YY Kiselev, MV Maximov, ...
Applied Physics Letters 92 (10), 2008
592008
Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
SA Blokhin, NA Maleev, AG Kuzmenkov, AV Sakharov, MM Kulagina, ...
IEEE journal of quantum electronics 42 (9), 851-858, 2006
592006
A 1.33 µm InAs/GaAs quantum dot laser with a 46 cm− 1 modal gain
MV Maximov, VM Ustinov, AE Zhukov, NV Kryzhanovskaya, AS Payusov, ...
Semiconductor science and technology 23 (10), 105004, 2008
532008
Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate
LY Karachinsky, T Kettler, II Novikov, YM Shernyakov, NY Gordeev, ...
Semiconductor science and technology 21 (5), 691, 2006
472006
Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm
AV Babichev, AG Gladyshev, AV Filimonov, VN Nevedomskii, ...
Technical Physics Letters 43, 666-669, 2017
442017
High-power low-beam divergence edge-emitting semiconductor lasers with 1-and 2-D photonic bandgap crystal waveguide
MV Maximov, YM Shernyakov, II Novikov, LY Karachinsky, NY Gordeev, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1113-1122, 2008
422008
High-power singlemode CW operation of 1.5 µm-range quantum dot GaAs-based laser
LY Karachinsky, T Kettler, NY Gordeev, II Novikov, MV Maximov, ...
Electronics Letters 41 (8), 1, 2005
422005
High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
MV Maximov, YM Shernyakov, II Novikov, SM Kuznetsov, LY Karachinsky, ...
IEEE journal of quantum electronics 41 (11), 1341-1348, 2005
412005
High-power high-brightness semiconductor lasers based on novel waveguide concepts
D Bimberg, K Posilovic, V Kalosha, T Kettler, D Seidlitz, VA Shchukin, ...
Novel In-Plane Semiconductor Lasers IX 7616, 321-334, 2010
382010
Wavelength-stabilized tilted cavity quantum dot laser
NN Ledentsov, VA Shchukin, SS Mikhrin, IL Krestnikov, AV Kozhukhov, ...
Semiconductor science and technology 19 (10), 1183, 2004
382004
High-power 1.3 μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
A Wilk, AR Kovsh, SS Mikhrin, C Chaix, II Novikov, MV Maximov, ...
Journal of crystal growth 278 (1-4), 335-341, 2005
372005
Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers
II Novikov, NY Gordeev, LY Karachinskii, MV Maksimov, YM Shernyakov, ...
Semiconductors 39, 477-480, 2005
362005
Reliability performance of 25 Gbit s− 1 850 nm vertical-cavity surface-emitting lasers
LY Karachinsky, SA Blokhin, II Novikov, NA Maleev, AG Kuzmenkov, ...
Semiconductor science and technology 28 (6), 065010, 2013
332013
Tilted wave lasers: A way to high brightness sources of light
V Shchukin, N Ledentsov, K Posilovic, V Kalosha, T Kettler, D Seidlitz, ...
IEEE Journal of Quantum Electronics 47 (7), 1014-1027, 2011
332011
Degradation-robust single mode continuous wave operation of 1.46 μm metamorphic quantum dot lasers on GaAs substrate
T Kettler, LY Karachinsky, NN Ledentsov, VA Shchukin, G Fiol, M Kuntz, ...
Applied physics letters 89 (4), 2006
322006
Progress on single mode VCSELs for data-and tele-communications
NN Ledentsov, JA Lott, JR Kropp, VA Shchukin, D Bimberg, P Moser, ...
Vertical-Cavity Surface-Emitting Lasers XVI 8276, 160-170, 2012
312012
Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal
II Novikov, LY Karachinsky, MV Maximov, YM Shernyakov, SM Kuznetsov, ...
Applied physics letters 88 (23), 2006
312006
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