| Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates SV Novikov, N Zainal, AV Akimov, CR Staddon, AJ Kent, CT Foxon Journal of Vacuum Science & Technology B 28 (3), C3B1-C3B6, 2010 | 46 | 2010 |
| Current-voltage characteristics of zinc-blende (cubic) Al0. 3Ga0. 7N/GaN double barrier resonant tunneling diodes N Zainal, SV Novikov, CJ Mellor, CT Foxon, AJ Kent Applied Physics Letters 97 (11), 2010 | 37 | 2010 |
| Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content SV Novikov, CR Staddon, AV Akimov, RP Campion, N Zainal, AJ Kent, ... Journal of crystal growth 311 (13), 3417-3422, 2009 | 35 | 2009 |
| Review of open cavity random lasers as laser-based sensors AN Azmi, WZ Wan Ismail, H Abu Hassan, MM Halim, N Zainal, ... ACS sensors 7 (4), 914-928, 2022 | 30 | 2022 |
| Improvement of porous GaAs (100) structure through electrochemical etching based on DMF solution MI Md Taib, N Zainal, Z Hassan Journal of Nanomaterials 2014 (1), 294385, 2014 | 28 | 2014 |
| Alteration of structural and optical properties in quaternary Al0. 1In0. 1Ga0. 8N films using ultraviolet assisted photo-electrochemical etching route WF Lim, HJ Quah, Z Hassan, R Radzali, N Zainal, FK Yam Journal of Alloys and Compounds 649, 337-347, 2015 | 22 | 2015 |
| Nanoporous InGaN of high In composition prepared by KOH electrochemical etching R Radzali, N Zainal, FK Yam, Z Hassan Materials science in semiconductor processing 16 (6), 2051-2057, 2013 | 16 | 2013 |
| Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics D Moss, AV Akimov, SV Novikov, RP Campion, CR Staddon, N Zainal, ... Journal of Physics D: Applied Physics 42 (11), 115412, 2009 | 16 | 2009 |
| Thermal stability of Ni/Ag contacts on p‐type GaN Z Hassan, YC Lee, FK Yam, ZJ Yap, N Zainal, H Abu Hassan, K Ibrahim physica status solidi (c) 1 (10), 2528-2532, 2004 | 16 | 2004 |
| Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers SN Waheeda, N Zainal, Z Hassan, SV Novikov, AV Akimov, AJ Kent Applied surface science 317, 1010-1014, 2014 | 15 | 2014 |
| SiO2 Capped-ZnO nanorods for enhanced random laser emission AT Ali, W Maryam, YW Huang, HC Hsu, NM Ahmed, N Zainal, MS Jameel Optics & Laser Technology 147, 107633, 2022 | 14 | 2022 |
| Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys HJ Quah, WF Lim, Z Hassan, R Radzali, N Zainal, FK Yam Arabian Journal of Chemistry 12 (8), 3417-3430, 2019 | 14 | 2019 |
| Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD MN Abd Rahman, A Shuhaimi, Y Yusuf, H Li, AF Sulaiman, ... Superlattices and microstructures 120, 319-326, 2018 | 14 | 2018 |
| Fabrication and characterization of copper doped zinc oxide by using Co-sputtering technique AS Yusof, Z Hassan, N Zainal Materials Research Bulletin 97, 314-318, 2018 | 14 | 2018 |
| Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN N Zainal, SV Novikov, AV Akimov, CR Staddon, CT Foxon, AJ Kent Physica B: Condensed Matter 407 (15), 2964-2966, 2012 | 14 | 2012 |
| UV random laser in aluminum-doped ZnO nanorods AT Ali, W Maryam, YW Huang, HC Hsu, NM Ahmed, N Zainal, ... Journal of the Optical Society of America B 38 (9), C69-C77, 2021 | 13 | 2021 |
| Performance of polycrystalline GaN based metal-semiconductor-metal (MSM) photodetector with different contact N Zainal, MA Ahmad, W Maryam, MEA Samsudin, SN Waheeda, ... Superlattices and Microstructures 138, 106369, 2020 | 13 | 2020 |
| Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients A Ariff, N Zainal, Z Hassan Superlattices and Microstructures 97, 193-201, 2016 | 12 | 2016 |
| Structural and optical characteristics of porous InAlGaN prepared by photoelectrochemical etching R Radzali, Z Hassan, N Zainal, FK Yam Journal of Alloys and Compounds 622, 565-571, 2015 | 12 | 2015 |
| Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD MN Abd Rahman, Y Yusuf, A Anuar, MR Mahat, N Chanlek, NA Talik, ... CrystEngComm 22 (19), 3309-3321, 2020 | 11 | 2020 |
Zainuriah HassanUniversiti Sains MalaysiaVerified email at usm.my
