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Norzaini Zainal
Norzaini Zainal
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Year
Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates
SV Novikov, N Zainal, AV Akimov, CR Staddon, AJ Kent, CT Foxon
Journal of Vacuum Science & Technology B 28 (3), C3B1-C3B6, 2010
432010
Current-voltage characteristics of zinc-blende (cubic) Al0. 3Ga0. 7N/GaN double barrier resonant tunneling diodes
N Zainal, SV Novikov, CJ Mellor, CT Foxon, AJ Kent
Applied Physics Letters 97 (11), 2010
382010
Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content
SV Novikov, CR Staddon, AV Akimov, RP Campion, N Zainal, AJ Kent, ...
Journal of crystal growth 311 (13), 3417-3422, 2009
352009
Improvement of porous GaAs (100) structure through electrochemical etching based on DMF solution
MI Md Taib, N Zainal, Z Hassan
Journal of Nanomaterials 2014, 2014
242014
Alteration of structural and optical properties in quaternary Al0. 1In0. 1Ga0. 8N films using ultraviolet assisted photo-electrochemical etching route
WF Lim, HJ Quah, Z Hassan, R Radzali, N Zainal, FK Yam
Journal of Alloys and Compounds 649, 337-347, 2015
222015
Review of open cavity random lasers as laser-based sensors
AN Azmi, WZ Wan Ismail, H Abu Hassan, MM Halim, N Zainal, ...
ACS sensors 7 (4), 914-928, 2022
162022
Nanoporous InGaN of high In composition prepared by KOH electrochemical etching
R Radzali, N Zainal, FK Yam, Z Hassan
Materials science in semiconductor processing 16 (6), 2051-2057, 2013
162013
Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics
D Moss, AV Akimov, SV Novikov, RP Campion, CR Staddon, N Zainal, ...
Journal of Physics D: Applied Physics 42 (11), 115412, 2009
162009
Thermal stability of Ni/Ag contacts on p‐type GaN
Z Hassan, YC Lee, FK Yam, ZJ Yap, N Zainal, H Abu Hassan, K Ibrahim
physica status solidi (c) 1 (10), 2528-2532, 2004
162004
Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers
SN Waheeda, N Zainal, Z Hassan, SV Novikov, AV Akimov, AJ Kent
Applied surface science 317, 1010-1014, 2014
152014
Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys
HJ Quah, WF Lim, Z Hassan, R Radzali, N Zainal, FK Yam
Arabian Journal of Chemistry 12 (8), 3417-3430, 2019
142019
Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD
MN Abd Rahman, A Shuhaimi, Y Yusuf, H Li, AF Sulaiman, ...
Superlattices and microstructures 120, 319-326, 2018
142018
Fabrication and characterization of copper doped zinc oxide by using Co-sputtering technique
AS Yusof, Z Hassan, N Zainal
Materials Research Bulletin 97, 314-318, 2018
132018
UV random laser in aluminum-doped ZnO nanorods
AT Ali, W Maryam, YW Huang, HC Hsu, NM Ahmed, N Zainal, HA Hassan, ...
JOSA B 38 (9), C69-C77, 2021
122021
Performance of polycrystalline GaN based metal-semiconductor-metal (MSM) photodetector with different contact
N Zainal, MA Ahmad, W Maryam, MEA Samsudin, SN Waheeda, ...
Superlattices and Microstructures 138, 106369, 2020
122020
Structural and optical characteristics of porous InAlGaN prepared by photoelectrochemical etching
R Radzali, Z Hassan, N Zainal, FK Yam
Journal of Alloys and Compounds 622, 565-571, 2015
122015
Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN
N Zainal, SV Novikov, AV Akimov, CR Staddon, CT Foxon, AJ Kent
Physica B: Condensed Matter 407 (15), 2964-2966, 2012
122012
Controlled porosity of GaN using different pore size of Si (1 0 0) substrates
MEA Samsudin, N Zainal, Z Hassan
Superlattices and Microstructures 73, 54-59, 2014
112014
Nanoporous InGaN prepared by KOH electrochemical etching with different light sources
R Radzali, Z Hassan, N Zainal, FK Yam
Microelectronic engineering 126, 107-112, 2014
112014
SiO2 Capped-ZnO nanorods for enhanced random laser emission
AT Ali, W Maryam, YW Huang, HC Hsu, NM Ahmed, N Zainal, MS Jameel
Optics & Laser Technology 147, 107633, 2022
102022
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