| Excellent Selector Characteristics of Nanoscale for High-Density Bipolar ReRAM Applications M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ... Electron Device Letters, IEEE, 1-3, 2011 | 296 | 2011 |
| Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ... Nanotechnology 22, 254023, 2011 | 292 | 2011 |
| Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014 | 266 | 2014 |
| Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems JW Jang, S Park, GW Burr, H Hwang, YH Jeong IEEE Electron Device Letters 36 (5), 457-459, 2015 | 215 | 2015 |
| RRAM-based synapse for neuromorphic system with pattern recognition function S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ... 2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012 | 191 | 2012 |
| Neuromorphic speech systems using advanced ReRAM-based synapse S Park, A Sheri, J Kim, J Noh, J Jang, M Jeon, B Lee, BR Lee, BH Lee, ... 2013 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2013 | 173 | 2013 |
| Electronic system with memristive synapses for pattern recognition S Park, M Chu, J Kim, J Noh, M Jeon, B Hun Lee, H Hwang, B Lee, B Lee Scientific reports 5 (1), 10123, 2015 | 167 | 2015 |
| -based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application J Shin, I Kim, KP Biju, M Jo, J Park, J Lee, S Jung, W Lee, S Kim, S Park, ... Journal of Applied Physics 109 (3), 033712, 2011 | 162 | 2011 |
| High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ... ACS nano 6 (9), 8166-8172, 2012 | 146 | 2012 |
| Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device S Park, J Noh, M Choo, AM Sheri, M Chang, YB Kim, CJ Kim, M Jeon, ... nanotechnology 24 (38), 384009, 2013 | 134 | 2013 |
| Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications J Lee, J Shin, D Lee, W Lee, S Jung, M Jo, J Park, KP Biju, S Kim, S Park, ... Electron Devices Meeting (IEDM), 2010 IEEE International, 19.5. 1-19.5. 4, 2010 | 124 | 2010 |
| Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ... 2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012 | 107 | 2012 |
| Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications X Liu, SM Sadaf, M Son, J Shin, J Park, J Lee, S Park, H Hwang Nanotechnology 22, 475702, 2011 | 107 | 2011 |
| Multibit Operation of -Based ReRAM by Schottky Barrier Height Engineering J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang Electron Device Letters, IEEE 32 (4), 476-478, 2011 | 101 | 2011 |
| Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ... 2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012 | 93 | 2012 |
| In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface K Baek, S Park, J Park, YM Kim, H Hwang, SH Oh Nanoscale 9 (2), 582-593, 2017 | 71 | 2017 |
| Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ... Microelectronic Engineering 107, 33-36, 2013 | 67 | 2013 |
| Complementary resistive switching in niobium oxide-based resistive memory devices X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang IEEE electron device letters 34 (2), 235-237, 2013 | 63 | 2013 |
| Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ... IEEE electron device letters 33 (5), 718-720, 2012 | 60 | 2012 |
| Non-volatile memory device and method of operating the same T Kim, K Kwack, S Park US Patent 7,863,673, 2011 | 60 | 2011 |
