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Sunil Singh Kushvaha
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Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target
SS Kushvaha, MS Kumar, KK Maurya, MK Dalai, ND Sharma
AIP Advances 3 (9), 092109, 2013
652013
Study of preferential localized degradation and breakdown of HfO 2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO 2 dielectrics
K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic Engineering 109, 364-369, 2013
532013
Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy
SS Kushvaha, MS Kumar, AK Shukla, BS Yadav, DK Singh, M Jewariya, ...
RSC Advances 5 (107), 87818-87830, 2015
492015
Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors
C Ramesh, P Tyagi, B Bhattacharyya, S Husale, KK Maurya, MS Kumar, ...
Journal of Alloys and Compounds 770, 572-581, 2019
442019
Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy
K Shubhakar, KL Pey, SS Kushvaha, SJ O’Shea, N Raghavan, M Bosman, ...
Applied Physics Letters 98 (7), 072902, 2011
392011
Self-assembly of antimony nanowires on graphite
XS Wang, SS Kushvaha, Z Yan, W Xiao
Applied Physics Letters 88 (23), 233105, 2006
342006
Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy
SS Kushvaha, MS Kumar, BS Yadav, PK Tyagi, S Ojha, KK Maurya, ...
CrystEngComm 18, 744-753, 2016
322016
Light assisted irreversible resistive switching in ultra thin hafnium oxide
H Borkar, A Thakre, SS Kushvaha, RP Aloysius, A Kumar
RSC Advances 5 (44), 35046-35051, 2015
302015
Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy
SS Kushvaha, P Pal, AK Shukla, AG Joshi, G Gupta, M Kumar, S Singh, ...
AIP Advances 4 (2), 027114, 2014
292014
Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness
S Gautam, V Aggarwal, B Singh, VPS Awana, R Ganesan, SS Kushvaha
Scientific Reports 12 (1), 9770, 2022
262022
Synthesis and magnetic properties of MnSb nanoparticles on Si-based substrates
H Zhang, SS Kushvaha, S Chen, X Gao, D Qi, ATS Wee, XS Wang
Applied Physics Letters 90 (20), 202503, 2007
242007
Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting
P Tyagi, C Ramesh, J Kaswan, S Dhua, S John, AK Shukla, SC Roy, ...
Journal of Alloys and Compounds 805, 97-103, 2019
222019
Photoconductivity and photo-detection response of multiferroic bismuth iron oxide
A Anshul, H Borkar, P Singh, P Pal, SS Kushvaha, A Kumar
Applied Physics Letters 104 (13), 132910, 2014
222014
Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy
SS Kushvaha, MS Kumar, M Maheshwari, AK Shukla, P Pal, KK Maurya
Materials Research Express 1 (3), 035903, 2014
202014
Chirality control and switching of vortices formed in hexagonal shaped ferromagnetic elements
SYH Lua, SS Kushvaha, YH Wu, KL Teo, TC Chong
Applied Physics Letters 93 (12), 122504, 2008
202008
Structural, electronic and thermoelectric properties of Bi2Se3 thin films deposited by RF magnetron sputtering
S Gautam, AK Verma, A Balapure, B Singh, R Ganesan, MS Kumar, ...
Journal of Electronic Materials 51 (5), 2500-2509, 2022
192022
Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE
C Ramesh, P Tyagi, BS Yadav, S Ojha, KK Maurya, MS Kumar, ...
Materials Science and Engineering: B 231, 105-114, 2018
182018
Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications
V Aggarwal, C Ramesh, P Tyagi, S Gautam, A Sharma, S Husale, ...
Materials Science in Semiconductor Processing 125, 105631, 2021
172021
Role of Growth Temperature on Formation of Single crystalline GaN Nanorods on Flexible Titanium foil by Laser Molecular Beam Epitaxy
C Ramesh, P Tyagi, G Abhiram, G Gupta, MS Kumar, SS Kushvaha
Journal of Crystal Growth 509, 23-28, 2019
162019
Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire
R Dixit, P Tyagi, SS Kushvaha, S Chockalingam, BS Yadav, ND Sharma, ...
Optical Materials 66, 142-148, 2017
162017
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