| Modified Deal Grove model for the thermal oxidation of silicon carbide Y Song, S Dhar, LC Feldman, G Chung, JR Williams Journal of Applied Physics 95 (9), 4953-4957, 2004 | 310 | 2004 |
| Silicon carbide: A unique platform for metal-oxide-semiconductor physics G Liu, BR Tuttle, S Dhar Applied Physics Reviews 2 (2), 2015 | 294 | 2015 |
| Bonding at the Interface and the Effects of Nitrogen and Hydrogen S Wang, S Dhar, S Wang, AC Ahyi, A Franceschetti, JR Williams, ... Physical review letters 98 (2), 026101, 2007 | 229 | 2007 |
| Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC J Rozen, S Dhar, ME Zvanut, JR Williams, LC Feldman Journal of Applied Physics 105 (12), 2009 | 205 | 2009 |
| Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes AM Armstrong, MH Crawford, A Jayawardena, A Ahyi, S Dhar Journal of Applied Physics 119 (10), 2016 | 179 | 2016 |
| Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors S Dhar, S Haney, L Cheng, SR Ryu, AK Agarwal, LC Yu, KP Cheung Journal of Applied Physics 108 (5), 2010 | 136 | 2010 |
| Enhanced Inversion Mobility on 4H-SiCUsing Phosphorus and Nitrogen Interface Passivation G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ... IEEE Electron Device Letters 34 (2), 181-183, 2013 | 129 | 2013 |
| Chemical properties of oxidized silicon carbide surfaces upon etching in hydrofluoric acid S Dhar, O Seitz, MD Halls, S Choi, YJ Chabal, LC Feldman Journal of the American Chemical Society 131 (46), 16808-16813, 2009 | 126 | 2009 |
| Interface passivation for silicon dioxide layers on silicon carbide S Dhar, S Wang, JR Williams, ST Pantelides, LC Feldman MRS bulletin 30 (4), 288-292, 2005 | 111 | 2005 |
| Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the 4H–SiC interface S Dhar, YW Song, LC Feldman, T Isaacs-Smith, CC Tin, JR Williams, ... Applied physics letters 84 (9), 1498-1500, 2004 | 106 | 2004 |
| Interface trap passivation for SiO2∕(0001) C-terminated 4H-SiC S Dhar, LC Feldman, S Wang, T Isaacs-Smith, JR Williams Journal of Applied Physics 98 (1), 2005 | 102 | 2005 |
| High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer YK Sharma, AC Ahyi, T Isaacs-Smith, A Modic, M Park, Y Xu, ... IEEE Electron Device Letters 34 (2), 175-177, 2013 | 94 | 2013 |
| Delivery of lethal dsRNAs in insect diets by branched amphiphilic peptide capsules LA Avila, R Chandrasekar, KE Wilkinson, J Balthazor, M Heerman, ... Journal of controlled release 273, 139-146, 2018 | 87 | 2018 |
| High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers DJ Lichtenwalner, L Cheng, S Dhar, A Agarwal, JW Palmour Applied Physics Letters 105 (18), 2014 | 87 | 2014 |
| Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface J Rozen, S Dhar, SK Dixit, VV Afanas’ev, FO Roberts, HL Dang, S Wang, ... Journal of Applied Physics 103 (12), 2008 | 86 | 2008 |
| Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ... Materials science forum 527, 935-948, 2006 | 73 | 2006 |
| Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC XD Chen, S Dhar, T Isaacs-Smith, JR Williams, LC Feldman, PM Mooney Journal of Applied Physics 103 (3), 2008 | 72 | 2008 |
| High channel mobility 4H-SiC MOSFETs by antimony counter-doping A Modic, G Liu, AC Ahyi, Y Zhou, P Xu, MC Hamilton, JR Williams, ... IEEE Electron Device Letters 35 (9), 894-896, 2014 | 71 | 2014 |
| Pressure dependence of SiO2 growth kinetics and electrical properties on SiC EA Ray, J Rozen, S Dhar, LC Feldman, JR Williams Journal of Applied Physics 103 (2), 2008 | 68 | 2008 |
| High-resolution elemental profiles of the silicon dioxide∕ 4H-silicon carbide interface KC Chang, Y Cao, LM Porter, J Bentley, S Dhar, LC Feldman, JR Williams Journal of applied physics 97 (10), 2005 | 68 | 2005 |
