| 6.5 V high threshold voltage AlGaN/GaN power metal-insulator-semiconductor high electron mobility transistor using multilayer fluorinated gate stack YH Wang, YC Liang, GS Samudra, H Huang, BJ Huang, SH Huang, ... IEEE Electron Device Letters 36 (4), 381-383, 2015 | 52 | 2015 |
| Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics YH Wang, YC Liang, GS Samudra, TF Chang, CF Huang, L Yuan, GQ Lo Semiconductor science and technology 28 (12), 125010, 2013 | 38 | 2013 |
| Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion R Sun, YC Liang, YC Yeo, YH Wang, C Zhao physica status solidi (a) 214 (3), 1600562, 2017 | 21 | 2017 |
| Realistic trap configuration scheme with fabrication processes in consideration for the simulations of AlGaN/GaN MIS-HEMT devices R Sun, YC Liang, YC Yeo, YH Wang, C Zhao IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 720-729, 2016 | 17 | 2016 |
| High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs YH Wang, YC Liang, GS Samudra, PJ Chu, YC Liao, CF Huang, WH Kuo, ... Semiconductor Science and Technology 31 (2), 025004, 2015 | 17 | 2015 |
| Threshold voltage instability in AlGaN/GaN HEMTs TF Chang, TC Hsiao, SH Huang, CF Huang, YH Wang, GS Samudra, ... 2015 IEEE 11th International Conference on Power Electronics and Drive …, 2015 | 15 | 2015 |
| The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment YH Wang, YC Liang, GS Samudra, CF Huang, WH Kuo, GQ Lo Applied Physics Letters 108 (23), 2016 | 10 | 2016 |
| High output swing monolithic inverter with ED mode MIS-HEMTs for GaN power integrated circuits YH Wang, YC Liang, GS Samudra, BJ Huang, YC Liao, CF Huang, ... 2015 IEEE 11th International Conference on Power Electronics and Drive …, 2015 | 7 | 2015 |
| 5V high threshold voltage normally-off MIS-HEMTs with combined partially recessed and multiple fluorinated-dielectric layers gate structures H Huang, YH Wang, YC Liang, GS Samudra, CF Huang, WH Kuo SSDM, Tsukuba, Japan, 640-641, 2014 | 6 | 2014 |
| Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices YH Wang, YC Liang, GS Samudra, TF Chang, CF Huang, L Yuan, GQ Lo 2013 IEEE ECCE Asia Downunder, 379-384, 2013 | 5 | 2013 |
| Design, simulation and fabrication of AlGaN/GaN normally-off high electron mobility transistors with investigation on temperature stability W Yun-Hsiang PQDT-Global, 2016 | 3 | 2016 |
| Design of DC-DC buck converter with integrated over-current protection based on power AlGaN/GaN MIS-HEMT configuration R Sun, YC Liang, YC Yeo, YH Wang, C Zhao 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 1 | 2016 |
| Effect of Gate Threshold Swings by ALD-Al2O3/AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers YH Wang, YC Liang, GS Samudra, BJ Huang, YC Liao, CF Huang, ... International Conference on Compound Semiconductor Manufacturing Technology …, 2015 | 1 | 2015 |
| The Stability of High Voltage AlGaN/GaN HEMTs CF Huang, TF Chang, YH Wang, YC Liang ECS Transactions 66 (7), 127, 2015 | | 2015 |
