Wave mechanics applied to semiconductor heterostructures G Bastard New York, NY (USA); John Wiley and Sons Inc., 1990 | 4441 | 1990 |
Superlattice band structure in the envelope-function approximation G Bastard Physical Review B 24 (10), 5693, 1981 | 1810 | 1981 |
Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs JY Marzin, JM Gérard, A Izraël, D Barrier, G Bastard Physical review letters 73 (5), 716, 1994 | 1554 | 1994 |
Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases U Bockelmann, G Bastard Physical Review B 42 (14), 8947, 1990 | 1416 | 1990 |
Hydrogenic impurity states in a quantum well: A simple model G Bastard Physical Review B 24 (8), 4714, 1981 | 1352 | 1981 |
Exciton binding energy in quantum wells G Bastard, EE Mendez, LL Chang, L Esaki Physical Review B 26 (4), 1974, 1982 | 1076 | 1982 |
Variational calculations on a quantum well in an electric field G Bastard, EE Mendez, LL Chang, L Esaki Physical Review B 28 (6), 3241, 1983 | 1051 | 1983 |
Theoretical investigations of superlattice band structure in the envelope-function approximation G Bastard Physical Review B 25 (12), 7584, 1982 | 839 | 1982 |
Quantum vacuum properties of the intersubband cavity polariton field C Ciuti, G Bastard, I Carusotto Physical Review B—Condensed Matter and Materials Physics 72 (11), 115303, 2005 | 762 | 2005 |
Evaluation of some scattering times for electrons in unbiased and biased single-and multiple-quantum-well structures R Ferreira, G Bastard Physical Review B 40 (2), 1074, 1989 | 581 | 1989 |
Electric-field-induced localization and oscillatory electro-optical properties of semiconductor superlattices J Bleuse, G Bastard, P Voisin Physical review letters 60 (3), 220, 1988 | 565 | 1988 |
Electronic states in semiconductor heterostructures G Bastard, J Brum IEEE Journal of Quantum Electronics 22 (9), 1625-1644, 1986 | 504 | 1986 |
Strong electron-phonon coupling regime in quantum dots: evidence for everlasting resonant polarons S Hameau, Y Guldner, O Verzelen, R Ferreira, G Bastard, J Zeman, ... Physical review letters 83 (20), 4152, 1999 | 467 | 1999 |
Effect of an electric field on the luminescence of GaAs quantum wells EE Mendez, G Bastard, LL Chang, L Esaki, H Morkoc, R Fischer Physical Review B 26 (12), 7101, 1982 | 404 | 1982 |
Optically Driven Spin Memory in -Doped InAs-GaAs Quantum Dots S Cortez, O Krebs, S Laurent, M Senes, X Marie, P Voisin, R Ferreira, ... Physical review letters 89 (20), 207401, 2002 | 322 | 2002 |
Electronic states in semiconductor heterostructures G Bastard, JA Brum, R Ferreira Solid State Physics 44, 229-415, 1991 | 317 | 1991 |
Resonant carrier capture by semiconductor quantum wells JA Brum, G Bastard Physical Review B 33 (2), 1420, 1986 | 315 | 1986 |
Calculation of the energy levels in InAsGaAs quantum dots JY Marzin, G Bastard Solid state communications 92 (5), 437-442, 1994 | 314 | 1994 |
Low-temperature exciton trapping on interface defects in semiconductor quantum wells G Bastard, C Delalande, MH Meynadier, PM Frijlink, M Voos Physical Review B 29 (12), 7042, 1984 | 290 | 1984 |
Phonon-assisted capture and intradot Auger relaxation in quantum dots R Ferreira, G Bastard Applied Physics Letters 74 (19), 2818-2820, 1999 | 285 | 1999 |