| Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ... Nature communications 5 (1), 1-7, 2014 | 248 | 2014 |
| Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes R McClintock, JL Pau, K Minder, C Bayram, P Kung, M Razeghi Applied physics letters 90, 141112, 2007 | 123 | 2007 |
| High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology D Shahrjerdi, SW Bedell, C Ebert, C Bayram, B Hekmatshoar, K Fogel, ... Applied Physics Letters 100 (5), 053901-053901-3, 2012 | 93 | 2012 |
| Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes C Bayram, Z Vashaei, M Razeghi Applied Physics Letters 97 (18), 181109-181109-3, 2010 | 92 | 2010 |
| AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition C Bayram, Z Vashaei, M Razeghi Applied Physics Letters 96 (4), 042103-042103-3, 2010 | 91 | 2010 |
| A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN C Bayram, FH Teherani, DJ Rogers, M Razeghi Applied Physics Letters 93, 081111, 2008 | 85 | 2008 |
| Back-illuminated separate absorption and multiplication GaN avalanche photodiodes JL Pau, C Bayram, R McClintock, M Razeghi, D Silversmith Applied Physics Letters 92, 101120, 2008 | 73 | 2008 |
| Delta-doping optimization for high quality p-type GaN C Bayram, JL Pau, R McClintock, M Razeghi Journal of Applied Physics 104 (8), 083512-083512-5, 2008 | 67 | 2008 |
| Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates E Cicek, Z Vashaei, R McClintock, C Bayram, M Razeghi Applied Physics Letters 96, 261107, 2010 | 61 | 2010 |
| Ultralight High‐Efficiency Flexible InGaP/(In) GaAs Tandem Solar Cells on Plastic D Shahrjerdi, SW Bedell, C Bayram, CC Lubguban, K Fogel, P Lauro, ... Advanced Energy Materials 3 (5), 566-571, 2013 | 60 | 2013 |
| Geiger-mode operation of back-illuminated GaN avalanche photodiodes JL Pau, R McClintock, K Minder, C Bayram, P Kung, M Razeghi, E Muņoz, ... Applied Physics Letters 91, 041104, 2007 | 60 | 2007 |
| Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations HP Lee, J Perozek, LD Rosario, C Bayram Scientific reports 6 (1), 1-10, 2016 | 55 | 2016 |
| Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes C Bayram, Z Vashaei, M Razeghi Applied Physics Letters 97, 092104, 2010 | 55 | 2010 |
| Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping C Bayram, JL Pau, R McClintock, M Razeghi Applied Physics Letters 92, 241103, 2008 | 53 | 2008 |
| Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si (111) Y Zhang, S Gautier, CY Cho, E Cicek, Z Vashaei, R McClintock, C Bayram, ... Applied Physics Letters 102 (1), 011106, 2013 | 48 | 2013 |
| Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature Z Vashaei, C Bayram, M Razeghi Journal of Applied Physics 107 (8), 083505-083505-5, 2010 | 48 | 2010 |
| GaN avalanche photodiodes grown on m-plane freestanding GaN substrate Z Vashaei, E Cicek, C Bayram, R McClintock, M Razeghi Applied Physics Letters 96, 201908, 2010 | 46 | 2010 |
| Scaling in back-illuminated GaN avalanche photodiodes K Minder, JL Pau, R McClintock, P Kung, C Bayram, M Razeghi, ... Applied Physics Letters 91, 073513, 2007 | 46 | 2007 |
| Cubic Phase GaN on Nano‐grooved Si (100) via Maskless Selective Area Epitaxy C Bayram, JA Ott, KT Shiu, CW Cheng, Y Zhu, J Kim, M Razeghi, ... Advanced Functional Materials 24 (28), 4492-4496, 2014 | 37* | 2014 |
| Stranski–Krastanov growth of InGaN quantum dots emitting in green spectra C Bayram, M Razeghi Appl Phys A 96 (2), 403, 2009 | 34 | 2009 |
