| Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application A Nourbakhsh, A Zubair, MS Dresselhaus, T Palacios Nano letters 16 (2), 1359-1366, 2016 | 558 | 2016 |
| MoS2 Field-Effect Transistor with Sub-10 nm Channel Length A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG, W Chen, S Fang, ... Nano letters 16 (12), 7798-7806, 2016 | 522 | 2016 |
| Bandgap opening in oxygen plasma-treated graphene A Nourbakhsh, M Cantoro, T Vosch, G Pourtois, F Clemente, ... Nanotechnology 21 (43), 435203, 2010 | 379 | 2010 |
| Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2/HfO 2 gate dielectric stack A Nourbakhsh, A Zubair, S Joglekar, M Dresselhaus, T Palacios Nanoscale 9 (18), 6122-6127, 2017 | 164 | 2017 |
| Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing A Nourbakhsh, M Cantoro, A Klekachev, F Clemente, B Soree, ... The Journal of Physical Chemistry C 114 (15), 6894-6900, 2010 | 105 | 2010 |
| Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter A Zubair, A Nourbakhsh, JY Hong, M Qi, Y Song, D Jena, J Kong, ... Nano letters 17 (5), 3089-3096, 2017 | 86 | 2017 |
| Single layer vs bilayer graphene: a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties A Nourbakhsh, M Cantoro, AV Klekachev, G Pourtois, T Vosch, J Hofkens, ... The Journal of Physical Chemistry C 115 (33), 16619-16624, 2011 | 75 | 2011 |
| Graphene transistors and photodetectors AV Klekachev, A Nourbakhsh, I Asselberghs, AL Stesmans, MM Heyns, ... The Electrochemical Society Interface 22 (1), 63, 2013 | 74 | 2013 |
| Highly efficient and stable MoS 2 FETs with reversible n-doping using a dehydrated poly (vinyl-alcohol) coating CJL de la Rosa, A Nourbakhsh, M Heyne, I Asselberghs, C Huyghebaert, ... Nanoscale 9 (1), 258-265, 2017 | 62 | 2017 |
| Impact of Al2O3 Passivation on the Photovoltaic Performance of Vertical WSe2 Schottky Junction Solar Cells E McVay, A Zubair, Y Lin, A Nourbakhsh, T Palacios ACS Applied Materials & Interfaces 12 (52), 57987-57995, 2020 | 50 | 2020 |
| Morphology optimization of CCVD-synthesized multiwall carbon nanotubes, usingstatistical design of experiments A Nourbakhsh, B Ganjipour, M Zahedifar, E Arzi Nanotechnology 18 (11), 115715, 2007 | 44 | 2007 |
| Diameter optimization of VLS-synthesized ZnO nanowires, using statistical design ofexperiment S Shafiei, A Nourbakhsh, B Ganjipour, M Zahedifar, G Vakili-Nezhaad Nanotechnology 18 (35), 355708, 2007 | 36 | 2007 |
| Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode A Nourbakhsh, M Cantoro, A Hadipour, T Vosch, MH van der Veen, ... Applied physics letters 97 (16), 2010 | 35 | 2010 |
| 15-nm channel length MoS2 FETs with single- and double-gate structures A Nourbakhsh, A Zubair, S Huang, X Ling, MS Dresselhaus, J Kong, ... 2015 Symposium on VLSI Technology (VLSI Technology), T28-T29, 2015 | 33 | 2015 |
| Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides Amirhasan Nourbakhsh, Christoph Adelmann, Yi Song, Chang Seung Lee, Inge ... Nanoscale, 2015 | 29 | 2015 |
| Bilayer Graphene Tunneling-FET for sub-0.2 V digital CMOS logic applications TK Agarwal, A Nourbakhsh, P Raghavan, I Radu, S Gendt, M Verhelst, ... Electron Device Letters, IEEE, 2014 | 23 | 2014 |
| Graphene-based semiconductor device A Nourbakhsh, M Cantoro, C Huyghebaert, M Heyns, S DeGendt US Patent 9,337,273, 2016 | 21 | 2016 |
| Graphene based field effect transistor A Nourbakhsh, M Heyns, SD Gendt US Patent US20140299841 A1, 2014 | 21 | 2014 |
| A high precision method for length-based separation of carbon nanotubes using bio-conjugation, SDS-PAGE and silver staining Z Borzooeian, ME Taslim, O Ghasemi, S Rezvani, G Borzooeian, ... PLoS One 13 (6), e0197972, 2018 | 20 | 2018 |
| Bilayer graphene tunneling field effect transistor A Nourbakhsh, B Soree, M Heyns, TK Agarwal US Patent 9,293,536, 2016 | 19 | 2016 |
Tomás PalaciosMITVerified email at mit.edu
