Effects of postdeposition annealing in argon ambient on metallorganic decomposed CeO2 gate spin coated on silicon HJ Quah, KY Cheong, Z Hassan, Z Lockman, FA Jasni, WF Lim Journal of the Electrochemical Society 157 (1), H6, 2009 | 75 | 2009 |
Effects of CNTs content and milling time on mechanical behavior of MWCNT-reinforced aluminum nanocomposites F Ostovan, KA Matori, M Toozandehjani, A Oskoueian, HM Yusoff, ... Materials Chemistry and Physics 166, 160-166, 2015 | 74 | 2015 |
Effects of post-deposition annealing ambient on Y 2 O 3 gate deposited on silicon by RF magnetron sputtering HJ Quah, KY Cheong Journal of Alloys and Compounds 529, 73-83, 2012 | 50 | 2012 |
Investigation on structural and optical properties of SLS–ZnO glasses prepared using a conventional melt quenching technique MHM Zaid, KA Matori, HJ Quah, WF Lim, HAA Sidek, MK Halimah, ... Journal of Materials Science: Materials in Electronics 26 (6), 3722-3729, 2015 | 49 | 2015 |
Comparison of metal-organic decomposed (MOD) cerium oxide (CeO 2) gate deposited on GaN and SiC substrates HJ Quah, WF Lim, KY Cheong, Z Hassan, Z Lockman Journal of Crystal Growth 326 (1), 2-8, 2011 | 43 | 2011 |
Study the effect of ZnO on physical and elastic properties of (ZnO)x(P2O5)1-x glasses using non-destructive ultrasonic method MSMG Khamirul Amin Matori, Mohd Hafiz Mohd Zaid, Hock Jin Quah, Sidek Hj ... Advances in Materials Science and Engineering, 2014 | 38* | 2014 |
Electrical properties of pulsed laser deposited Y2O3 gate oxide on 4H–SiC HJ Quah, WF Lim, SC Wimbush, Z Lockman, KY Cheong Electrochemical and Solid State Letters 13 (11), H396, 2010 | 38 | 2010 |
Effect of postdeposition annealing in oxygen ambient on gallium-nitride-based MOS capacitors with cerium oxide gate HJ Quah, KY Cheong, Z Hassan, Z Lockman IEEE transactions on electron devices 58 (1), 122-131, 2010 | 37 | 2010 |
Deposition and post-deposition annealing of thin Y 2 O 3 film on n-type Si in argon ambient HJ Quah, KY Cheong Materials Chemistry and Physics 130 (3), 1007-1015, 2011 | 35 | 2011 |
Investigation of forming-gas annealed CeO2 thin film on GaN HJ Quah, KY Cheong, Z Hassan, Z Lockman Journal of Materials Science: Materials in Electronics 22, 583-591, 2011 | 33 | 2011 |
Effects of ammonia-ambient annealing on physical and electrical characteristics of rare earth CeO2 as passivation film on silicon HJ Quah, Z Hassan, FK Yam, NM Ahmed, MAM Salleh, KA Matori, WF Lim Journal of Alloys and Compounds 695, 3104-3115, 2017 | 30 | 2017 |
Effects of annealing time on the electrical properties of the Y2O3 gate on silicon HJ Quah, KY Cheong Journal of Experimental Nanoscience 10 (1), 19-28, 2015 | 30 | 2015 |
Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y 2 O 3 gate on gallium nitride HJ Quah, KY Cheong Journal of Alloys and Compounds 575, 382-392, 2013 | 30 | 2013 |
Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride HJ Quah, KY Cheong Nanoscale research letters 8, 1-7, 2013 | 29 | 2013 |
Study on Gallium Nitride-Based Metal–Oxide–Semiconductor Capacitors With RF Magnetron Sputtered Gate HJ Quah, KY Cheong IEEE Transactions on Electron Devices 59 (11), 3009-3016, 2012 | 26 | 2012 |
Effects of N2O postdeposition annealing on metal-organic decomposed CeO2 gate oxide spin-coated on GaN substrate HJ Quah, KY Cheong, Z Hassan, Z Lockman Journal of The Electrochemical Society 158 (4), H423, 2011 | 26 | 2011 |
Effects of post-deposition annealing temperature in nitrogen/oxygen/nitrogen ambient on polycrystalline gallium oxide films PHMA Hedei, Z Hassan, HJ Quah Applied Surface Science 550, 149340, 2021 | 25 | 2021 |
MOS characteristics of metallorganic-decomposed CeO2 spin-coated on GaN HJ Quah, KY Cheong, Z Hassan, Z Lockman Electrochemical and Solid State Letters 13 (4), H116, 2010 | 24 | 2010 |
Stimulation of silicon carbide nanotubes formation using different ratios of carbon nanotubes to silicon dioxide nanopowders HJ Quah, KY Cheong, Z Lockman Journal of Alloys and Compounds 475 (1-2), 565-568, 2009 | 24 | 2009 |
Alteration of structural and optical properties in quaternary Al 0.1 In 0.1 Ga 0.8 N films using ultraviolet assisted photo-electrochemical etching route WF Lim, HJ Quah, Z Hassan, R Radzali, N Zainal, FK Yam Journal of Alloys and Compounds 649, 337-347, 2015 | 22 | 2015 |