Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures K Ismail, M Arafa, KL Saenger, JO Chu, BS Meyerson Applied Physics Letters 66 (9), 1077-1079, 1995 | 299 | 1995 |
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures K Ismail, FK LeGoues, KL Saenger, M Arafa, JO Chu, PM Mooney, ... Physical review letters 73 (25), 3447, 1994 | 177 | 1994 |
Cascade lake: Next generation intel xeon scalable processor M Arafa, B Fahim, S Kottapalli, A Kumar, LP Looi, S Mandava, A Rudoff, ... IEEE Micro 39 (2), 29-36, 2019 | 82 | 2019 |
Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP A Mahajan, M Arafa, P Fay, C Caneau, I Adesida IEEE Transactions on Electron Devices 45 (12), 2422-2429, 1998 | 79 | 1998 |
High speed p-type SiGe modulation-doped field-effect transistors M Arafa, P Fay, K Ismail, JO Chu, BS Meyerson, I Adesida IEEE Electron Device Letters 17 (3), 124-126, 1996 | 75 | 1996 |
Method and apparatus to provide an area efficient antenna diversity receiver M Arafa US Patent 7,116,952, 2006 | 67 | 2006 |
A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET M Arafa, K Ismail, JO Chu, BS Meyerson, I Adesida IEEE Electron Device Letters 17 (12), 586-588, 1996 | 59 | 1996 |
Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures K Ismail, M Arafa, F Stern, JO Chu, BS Meyerson Applied physics letters 66 (7), 842-844, 1995 | 53 | 1995 |
Contact layout for MOSFETs under tensile strain G Schrom, M Armstrong, M Arafa US Patent App. 10/329,078, 2004 | 48 | 2004 |
InGaAs metal‐semiconductor‐metal photodetectors with engineered Schottky barrier heights WA Wohlmuth, M Arafa, A Mahajan, P Fay, I Adesida Applied physics letters 69 (23), 3578-3580, 1996 | 42 | 1996 |
0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor A Mahajan, M Arafa, P Fay, C Caneau, I Adesida IEEE Electron Device Letters 18 (6), 284-286, 1997 | 41 | 1997 |
Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement-and depletion-mode high-electron mobility transistors A Mahajan, G Cueva, M Arafa, P Fay, I Adesida IEEE Electron Device Letters 18 (8), 391-393, 1997 | 35 | 1997 |
DC and RF performance of 0.25 μm p-type SiGe MODFET M Arafa, P Fay, K Ismail, JO Chu, BS Meyerson, I Adesida IEEE Electron Device Letters 17 (9), 449-451, 1996 | 31 | 1996 |
Sidewall spacers and methods of making same M Arafa, W Han, A Myers, D Simon US Patent App. 09/752,798, 2002 | 28 | 2002 |
Integration of InAlAs/InGaAs/InP enhancement-and depletion-mode high electron mobility transistors for high-speed circuit applications A Mahajan, P Fay, M Arafa, I Adesida IEEE Transactions on Electron Devices 45 (1), 338-340, 1998 | 25 | 1998 |
Low dark current photodetector I Adesida, W Wohlmuth, M Arafa, P Fay US Patent 5,880,482, 1999 | 23 | 1999 |
Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers P Fay, M Arafa, WA Wohlmuth, C Caneau, S Chandrasekhar, I Adesida Journal of lightwave technology 15 (10), 1871-1879, 1997 | 20 | 1997 |
High-transconductance p-type SiGe modulation-doped field-effect transistor M Arafa, K Ismail, P Fay, JO Chu, BS Meyerson, I Adesida Electronics Letters 31 (8), 680-681, 1995 | 18 | 1995 |
Integrated circuit with borderless contacts M Arafa, S Thompson US Patent 6,228,777, 2001 | 17 | 2001 |
Integrated enhancement-and depletion-mode FET's in modulation-doped Si/SiGe heterostructures K Ismail, JO Chu, M Arafa IEEE Electron Device Letters 18 (9), 435-437, 1997 | 17 | 1997 |