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Ts. Dr. Muhammad Idzdihar Idris
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Year
Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide
MH Weng, DT Clark, SN Wright, DL Gordon, MA Duncan, SJ Kirkham, ...
Semiconductor Science and Technology 32 (5), 054003, 2017
292017
Low Cost Electro-deposition of Cuprous Oxide PN Homo-junction Solar Cell
F Arith, SAM Anis, MM Said, MI Idris
Advanced Materials Research 827, 38-43, 2014
252014
Face Recognition using Principle Component Analysis (PCA) and Linear Discriminant Analysis (LDA)
MNS Zainudin, HR Radi, SM Abdullah, RA Rahim, MM Ismail
222013
ZnO quantum dot based thin films as promising electron transport layer: Influence of surface-to-volume ratio on the photoelectric properties
AT Nomaan, AA Ahmed, NM Ahmed, MI Idris, MR Hashim, M Rashid
Ceramics International 47 (9), 12397-12409, 2021
202021
Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures
MI Idris, MH Weng, HK Chan, AE Murphy, DT Clark, RAR Young, ...
Journal of Applied Physics 120 (21), 2016
172016
Structural engineering of double shells decoration for preparing a high-efficiency electromagnetic wave absorber
W Li, A Hassan, ASAH Zedan, M Idris, M Fayed, S Mehrez, K Nag
Ceramics International 49 (9), 14538-14550, 2023
122023
A Low Voltage VGA for RFID Receivers
MIB Idris, MBI Reaz, MAS Bhuiyan
122013
Structural, optical and electrical investigation of low-temperature processed zinc oxide quantum dots based thin films using precipitation-spin coating on flexible substrates
S Muhammad, AT Nomaan, MI Idris, M Rashid
Physica B: Condensed Matter 635, 413806, 2022
112022
Low power operational amplifier in 0.13 um technology
MI Idris, N Yusop, SA Mohd Chachuli, MM Ismail, F Arith, AM Darsono
Modern Applied Science 9 (1), 34-44, 2015
112015
Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors
MI Idris, NG Wright, AB Horsfall
Materials Science Forum 924, 486-489, 2018
102018
Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection
MI Idris, MH Weng, A Peters, RJ Siddall, NJ Townsend, NG Wright, ...
Journal of Physics D: Applied Physics 52 (50), 505102, 2019
92019
Concentration dependence of physical properties of low temperature processed ZnO quantum dots thin films on polyethylene terephthalate as potential electron transport material …
S Muhammad, AT Nomaan, AO Olaoye, MI Idris, M Rashid
Ceramics International 48 (21), 31559-31569, 2022
82022
Activity recognition on subject independent using machine learning
YJ Kee, MNS Zainudin, MI Idris, RH Ramlee, MR Kamarudin
Cybernetics and Information Technologies 20 (3), 64-74, 2020
72020
Design and analysis of low noise amplifier using cadence
MI Idris, N Yusop, SA Mohd Chachuli, MM Ismail
Journal of Theoretical and Applied Information Technology 69 (1), 151-160, 2014
72014
An investigation on NiO for hole transport material in perovskite solar cells
S Muniandy, MIB Idris, ZAFBM Napiah, HHM Yusof, SAM Chachuli, ...
2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 112-115, 2021
42021
LOW POWER IN NANO-SCALE CMOS MEMORY.
LF Rahman, FB Arith, MIB Idris, MBI Reaz, M Marufuzzaman
Journal of Theoretical & Applied Information Technology 61 (2), 2014
42014
ROS 2 Configuration for Delta Robot Arm Kinematic Motion and Stereo Camera Visualization
KM Saipullah, WHM Saad, SH Chong, MI Idris, SA Radzi
Journal of Robotics and Control (JRC) 3 (3), 320-327, 2022
32022
3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric
MI Idris, AB Horsfall
Materials Science in Semiconductor Processing 128, 105727, 2021
32021
Surface Treatment of 4H-SiC MOSFETs Prior to Al2O3 Deposition
MI Idris, AB Horsfall
Materials Science Forum 1004, 541-546, 2020
32020
Electrical stability impact of gate oxide in channel implanted SiC NMOS and PMOS transistors
MI Idris, MH Weng, HK Chan, AE Murphy, DA Smith, RAR Young, ...
Materials Science Forum 897, 513-516, 2017
32017
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