| New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity D Lederer, JP Raskin IEEE Electron Device Letters 26 (11), 805-807, 2005 | 290 | 2005 |
| Plant functional type classification for earth system models: results from the European Space Agency's Land Cover Climate Change Initiative B Poulter, N MacBean, A Hartley, I Khlystova, O Arino, R Betts, ... Geoscientific Model Development 8 (7), 2315-2328, 2015 | 248* | 2015 |
| Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers D Lederer, JP Raskin Solid-State Electronics 47 (11), 1927-1936, 2003 | 164 | 2003 |
| Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization JP Raskin, TM Chung, V Kilchytska, D Lederer, D Flandre IEEE Transactions on Electron Devices 53 (5), 1088-1095, 2006 | 137 | 2006 |
| What are the limiting parameters of deep-submicron MOSFETs for high frequency applications? G Dambrine, C Raynaud, D Lederer, M Dehan, O Rozeaux, ... IEEE Electron Device Letters 24 (3), 189-191, 2003 | 132 | 2003 |
| Effective resistivity of fully-processed SOI substrates D Lederer, JP Raskin Solid-State Electronics 49 (3), 491-496, 2005 | 129 | 2005 |
| FinFET analogue characterization from DC to 110 GHz D Lederer, V Kilchytska, T Rudenko, N Collaert, D Flandre, A Dixit, ... Solid-State Electronics 49 (9), 1488-1496, 2005 | 126 | 2005 |
| Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses D Lederer US Patent App. 10/572,799, 2007 | 124 | 2007 |
| RF performance of a commercial SOI technology transferred onto a passivated HR silicon substrate D Lederer, JP Raskin IEEE Transactions on Electron Devices 55 (7), 1664-1671, 2008 | 86 | 2008 |
| Enhanced high resistivity SOI wafers for RF applications D Lederer, R Lobet, JP Raskin 2004 IEEE International SOI Conference (IEEE Cat. No. 04CH37573), 46-47, 2004 | 86 | 2004 |
| Dependence of FinFET RF performance on fin width D Lederer, B Parvais, A Mercha, N Collaert, M Jurczak, JP Raskin, ... Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated …, 2006 | 78 | 2006 |
| Performance of SOI devices transferred onto passivated HR SOI substrates using a layer transfer technique D Lederer, B Aspar, C Laghae-Blanchard, JP Raskin 2006 IEEE International SOI Conferencee Proceedings, 29-30, 2006 | 72 | 2006 |
| Perspective of FinFETs for analog applications V Kilchytska, N Collaert, R Rooyackers, D Lederer, JP Raskin, D Flandre Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004 | 69 | 2004 |
| Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs V Kilchytska, D Levacq, D Lederer, JP Raskin, D Flandre IEEE Electron Device Letters 24 (6), 414-416, 2003 | 54 | 2003 |
| High-frequency noise performance of 60-nm gate-length FinFETs JP Raskin, G Pailloncy, D Lederer, F Danneville, G Dambrine, ... IEEE transactions on electron devices 55 (10), 2718-2727, 2008 | 52 | 2008 |
| Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations R Yan, D Lynch, T Cayron, D Lederer, A Afzalian, CW Lee, N Dehdashti, ... Solid-State Electronics 52 (12), 1872-1876, 2008 | 41 | 2008 |
| Impact of Si substrate resistivity on the non-linear behaviour of RF CPW transmission lines CR Neve, D Lederer, G Pailloncy, DC Kerr, JM Gering, TG McKay, ... 2008 European Microwave Integrated Circuit Conference, 36-39, 2008 | 33 | 2008 |
| Accurate effective mobility extraction by split CV technique in SOI MOSFETs: Suppression of the influence of floating-body effects V Kilchytska, D Lederer, N Collaert, JP Raskin, D Flandre IEEE electron device letters 26 (10), 749-751, 2005 | 31 | 2005 |
| Process for manufacturing a multilayer structure made from semiconducting materials JP Raskin, D Lederer, F Brunier US Patent 7,585,748, 2009 | 30 | 2009 |
| Properties of accumulation-mode multi-gate field-effect transistors JP Colinge, D Lederer, A Afzalian, R Yan, CW Lee, ND Akhavan, W Xiong Japanese journal of applied physics 48 (3R), 034502, 2009 | 28 | 2009 |
Denis FlandreICTEAM, EPL, Université catholique de Louvain (UCL)Verified email at uclouvain.be
