Yiyun Zhang
Yiyun Zhang
Institute of Semiconcutors, CAS
Verified email at semi.ac.cn
Cited by
Cited by
282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
P Dong, J Yan, J Wang, Y Zhang, C Geng, T Wei, P Cong, Y Zhang, ...
Applied Physics Letters 102 (24), 241113, 2013
Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures
L Wang, W Liu, Y Zhang, ZH Zhang, ST Tan, X Yi, G Wang, X Sun, H Zhu, ...
Nano Energy 12, 419-436, 2015
Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well
H Li, P Li, J Kang, Z Li, Y Zhang, Z Li, J Li, X Yi, J Li, G Wang
Applied Physics Express 6 (5), 052102, 2013
Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes
Y Zhang, H Xie, H Zheng, T Wei, H Yang, J Li, X Yi, X Song, G Wang, J Li
Optics Express 20 (6), 6808-6815, 2012
Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes
Y Zhang, L Wang, X Li, X Yi, N Zhang, J Li, H Zhu, G Wang
Journal of Applied Physics 111 (11), 114501, 2012
Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode
Y Zhang, X Li, L Wang, X Yi, D Wu, H Zhu, G Wang
Nanoscale 4 (19), 5852-5855, 2012
Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes
L Wang, Y Zhang, X Li, Z Liu, E Guo, X Yi, J Wang, H Zhu, G Wang
Applied Physics Letters 101 (6), 061102, 2012
Advances in III‐nitride semiconductor microdisk lasers
Y Zhang, X Zhang, KH Li, YF Cheung, C Feng, HW Choi
Physica Status Solidi (a) 212 (5), 960-973, 2015
Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes
Y Zhang, H Zheng, E Guo, Y Cheng, J Ma, L Wang, Z Liu, X Yi, G Wang, ...
Journal of Applied Physics 113 (1), 014502, 2013
Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping
L Wang, Y Zhang, X Li, E Guo, Z Liu, X Yi, H Zhu, G Wang
RSC Advances 3 (10), 3359-3364, 2013
nBn extended short-wavelength infrared focal plane array
Arash Dehzangi, Abbas Haddadi, Romain Chevallier, Yiyun Zhang, and Manijeh ...
Optics Letters 43 (3), 591-594, 2018
Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si
Y Zhang, Z Ma, X Zhang, T Wang, HW Choi
Applied Physics Letters 104 (22), 221106, 2014
Light Extraction Efficiency Improvement by Curved GaN Sidewalls in InGaN-Based Light-Emitting Diodes
Z Yiyun, G Enqing, L Zhi, W Tongbo, L Jing, Y Xiaoyan, W Guohong
Photonics Technology Letters, IEEE 24 (4), 243-245, 2012
Interface and transport properties of GaN/graphene junction in GaN-based LEDs
L Wang, Y Zhang, X Li, Z Liu, E Guo, X Yi, J Wang, H Zhu, G Wang
Journal of Physics D: Applied Physics 45 (50), 505102, 2012
Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays
TB Wei, K Wu, Y Chen, J Yu, Q Yan, YY Zhang, R Duan, J Wang, Y Zeng, ...
IEEE Electron Device Letters 33 (6), 857-859, 2012
Whispering-gallery mode lasing from optically free-standing InGaN microdisks
X Zhang, YF Cheung, Y Zhang, HW Choi
Optics Letters 39 (19), 5614-5617, 2014
High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition
Donghai Wu, Quentin Durlin, Arash Dehzangi, Yiyun Zhang, and Manijeh Razeghi
Applied Physics Letters 114 (011104), 2019
Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization
H Li, P Li, J Kang, Z Li, Y Zhang, M Liang, Z Li, J Li, X Yi, G Wang
Applied Physics Express 6 (9), 092101, 2013
Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition
DH Wu, A Dehzangi, YY Zhang, M Razeghi
Applied Physics Letters 112 (24), 241103, 2018
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
H Li, P Li, J Kang, J Ding, J Ma, Y Zhang, X Yi, G Wang
Scientific Reports 6, 35217, 2016
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