| A novel partial-ground-plane-based MOSFET on selective buried oxide: 2-D simulation study SA Loan, S Qureshi, SSK Iyer IEEE Transactions on Electron Devices 57 (3), 671-680, 2010 | 115 | 2010 |
| Hydrogenated amorphous silicon pixel detectors for minimum ionizing particles V Perez-Mendez, SN Kaplan, G Cho, I Fujieda, S Qureshi, W Ward Nuclear Instruments and Methods in Physics Research A 273, 1988 | 73 | 1988 |
| Theoretical study on transport properties of a BN co-doped SiC nanotube S Choudhary, S Qureshi Physics letters A 375 (38), 3382-3385, 2011 | 53 | 2011 |
| Amorphous silicon based radiation detectors V Perez-Mendez, G Cho, J Drewery, T Jing, SN Kaplan, S Qureshi, ... Journal of non-crystalline solids 137, 1291-1296, 1991 | 39 | 1991 |
| Theoretical study on the effect of dopant positions and dopant density on transport properties of a BN co-doped SiC nanotube S Choudhary, S Qureshi Physics Letters A 377 (5), 430-435, 2013 | 37 | 2013 |
| Signal, recombination effects and noise in amorphous silicon detectors V Perez-Mendez, SN Kaplan, W Ward, S Qureshi, RA Street Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1987 | 37 | 1987 |
| A novel δ-doped partially insulated dopant-segregated Schottky barrier SOI MOSFET for analog/RF applications GC Patil, S Qureshi Semiconductor science and technology 26 (8), 085002, 2011 | 34 | 2011 |
| Performance evaluation of mesh-based NoCs: Implementation of a new architecture and routing algorithm S Choudhary, S Qureshi International Journal of Automation and Computing 9, 403-413, 2012 | 31 | 2012 |
| The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection V Perez-Mendez, G Cho, I Fujieda, SN Kaplan, S Qureshi, RA Street MRS Online Proceedings Library 149, 621-630, 1989 | 31 | 1989 |
| Signal generation in a hydrogenated amorphous silicon detector S Bureshi, V Perez-Mendez, SN Kaplan | 31 | 1988 |
| Engineering spacers in dopant-segregated Schottky barrier SOI MOSFET for nanoscale CMOS logic circuits GC Patil, S Qureshi Semiconductor Science and Technology 27 (4), 045004, 2012 | 26 | 2012 |
| Underlap channel metal source/drain SOI MOSFET for thermally efficient low-power mixed-signal circuits GC Patil, S Qureshi Microelectronics Journal 43 (5), 321-328, 2012 | 25 | 2012 |
| l. Pujieda, G. Cho and RA Street S Qureshi, V Perez-Mendez, SN Kaplan Mat. Res. Soc. Symp. Proc 149, 649, 1989 | 23 | 1989 |
| Surface-potential-based charge sheet model for the polysilicon thin film transistors without considering kink effect MJ Siddiqui, S Qureshi Microelectronics journal 32 (3), 235-240, 2001 | 20 | 2001 |
| Theoretical study on the effect of vacancy defect reconstruction on electron transport in Si-C nanotubes S Choudhary, S Qureshi Modern Physics Letters B 25 (28), 2159-2170, 2011 | 19 | 2011 |
| A dc charge sheet turn-on model for the I–V characteristics of doped polysilicon thin film transistors S Qureshi, MJ Siddiqui Semiconductor science and technology 17 (6), 526, 2002 | 18 | 2002 |
| Applications of a-Si: H radiation detectors I Fujieda, G Cho, SN Kaplan, V Perez-Mendez, S Qureshi, RA Street Journal of Non-Crystalline Solids 115 (1-3), 174-176, 1989 | 18 | 1989 |
| An empirical model for leakage current in poly-silicon thin film transistor MJ Siddiqui, S Qureshi Solid-State Electronics 44 (11), 2015-2019, 2000 | 17 | 2000 |
| Design and analysis of current starved vco targeting scl 180 nm cmos process C Shekhar, S Qureshi 2018 IEEE International Symposium on Smart Electronic Systems (iSES …, 2018 | 16 | 2018 |
| Chapter 8 in" Physics and Applications of Amorphous and Microcrystalline Semiconductor Devices", J V Perez-Mendez, G Cho, J Drewrey, I Fujieda, SN Kaplan, S Qureshi, ... Kanicki, Ed., Artech House Pub., Boston, MA (May 1991), 1991 | 16 | 1991 |
