Anthony O'Neill
Anthony O'Neill
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Experimental observation of negative capacitance in ferroelectrics at room temperature
DJR Appleby, NK Ponon, KSK Kwa, B Zou, PK Petrov, T Wang, NM Alford, ...
Nano letters 14 (7), 3864-3868, 2014
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to -type silicon carbide
IP Nikitina, KV Vassilevski, NG Wright, AB Horsfall, AG O’Neill, ...
Journal of Applied Physics 97 (8), 083709, 2005
Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films
NK Ponon, DJR Appleby, E Arac, PJ King, S Ganti, KSK Kwa, A O'Neill
Thin Solid Films 578, 31-37, 2015
Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation
C Fiegna, Y Yang, E Sangiorgi, AG O'Neill
IEEE Transactions on Electron Devices 55 (1), 233-244, 2007
A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics
KSK Kwa, S Chattopadhyay, ND Jankovic, SH Olsen, LS Driscoll, ...
Semiconductor science and technology 18 (2), 82, 2002
The sinusoidal probe: a new approach to improve electrode longevity
HS Sohal, A Jackson, R Jackson, GJ Clowry, K Vassilevski, A O’Neill, ...
Frontiers in neuroengineering 7, 10, 2014
Deep submicron CMOS based on silicon germanium technology
AG O'Neill, DA Antoniadis
IEEE Transactions on Electron Devices 43 (6), 911-918, 1996
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
SH Olsen, AG O'Neill, LS Driscoll, KSK Kwa, S Chattopadhyay, AM Waite, ...
IEEE Transactions on Electron Devices 50 (9), 1961-1969, 2003
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
GK Dalapati, S Chattopadhyay, KSK Kwa, SH Olsen, YL Tsang, R Agaiby, ...
IEEE transactions on electron devices 53 (5), 1142-1152, 2006
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
KV Vassilevski, NG Wright, IP Nikitina, AB Horsfall, AG O'neill, MJ Uren, ...
Semiconductor Science and Technology 20 (3), 271, 2005
A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor
SA Mojarad, KSK Kwa, JP Goss, Z Zhou, NK Ponon, DJR Appleby, ...
Journal of Applied Physics 111 (1), 014503, 2012
Device and circuit performance of SiGe/Si MOSFETs
SG Badcock, AG O’Neill, EG Chester
Solid-State Electronics 46 (11), 1925-1932, 2002
Mechanical flexibility reduces the foreign body response to long-term implanted microelectrodes in rabbit cortex
HS Sohal, GJ Clowry, A Jackson, A O’Neill, SN Baker
PloS one 11 (10), e0165606, 2016
Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
KE Moselund, P Dobrosz, S Olsen, V Pott, L De Michielis, D Tsamados, ...
2007 IEEE International Electron Devices Meeting, 191-194, 2007
Study of single-and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs
SH Olsen, AG O'Neill, S Chattopadhyay, LS Driscoll, KSK Kwa, DJ Norris, ...
IEEE Transactions on Electron Devices 51 (8), 1245-1253, 2004
A new version of crystal field theory and its application to ZnSe: Co
AG O'neill, JW Allen
Solid state communications 46 (11), 833-836, 1983
Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance
SH Olsen, AG O'Neill, DJ Norris, AG Cullis, NJ Woods, J Zhang, ...
Semiconductor science and technology 17 (7), 655, 2002
A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors
M De Michielis, D Esseni, YL Tsang, P Palestri, L Selmi, AG O'Neill, ...
IEEE transactions on electron devices 54 (9), 2164-2173, 2007
High speed deep sub-micron MOSFET using high mobility strained silicon channel
AG O'Neill, DA Antoniadis
ESSDERC'95: Proceedings of the 25th European Solid State Device Research …, 1995
Recent progress and current issues in SiC semiconductor devices for power applications
CM Johnson, NG Wright, MJ Uren, KP Hilton, M Rahimo, DA Hinchley, ...
IEE Proceedings-Circuits, Devices and Systems 148 (2), 101-108, 2001
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