| Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies AA Salman, SG Beebe, M Emam, MM Pelella, DE Ioannou 2006 International Electron Devices Meeting, 1-4, 2006 | 83 | 2006 |
| Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit MKM Arshad, V Kilchytska, M Emam, F Andrieu, D Flandre, JP Raskin Solid-State Electronics 97, 38-44, 2014 | 42 | 2014 |
| High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors M Emam, JC Tinoco, D Vanhoenacker-Janvier, JP Raskin Solid-State Electronics 52 (12), 1924-1932, 2008 | 38 | 2008 |
| Experimental investigation of RF noise performance improvement in graded-channel MOSFETs M Emam, P Sakalas, D Vanhoenacker-Janvier, JP Raskin, TC Lim, ... IEEE transactions on electron devices 56 (7), 1516-1522, 2009 | 34 | 2009 |
| Radio-frequency study of dopant-segregated n-type SB-MOSFETs on thin-body SOI C Urban, M Emam, C Sandow, J Knoch, QT Zhao, JP Raskin, S Mantl IEEE Electron Device Letters 31 (6), 537-539, 2010 | 25 | 2010 |
| RF SOI: from Material to ICs—an Innovative Characterization Approach M Emam FD-SOI and RF-SOI Forum, Friday 35, 2015 | 24 | 2015 |
| Small-signal analysis of high-performance p-and n-type SOI SB-MOSFETs with dopant segregation C Urban, M Emam, C Sandow, QT Zhao, A Fox, S Mantl, JP Raskin Solid-state electronics 54 (9), 877-882, 2010 | 14 | 2010 |
| PaperThe Impact of ExternallyApplied Mechanical Stress on Analogand RF Performances of SOI MOSFETs M Emam, S Houri, D Vanhoenacker-Janvier, JP Raskin Journal of Telecommunications and Information Technology, 18-24, 2009 | 14* | 2009 |
| Partially depleted SOI versus deep N-well protected bulk-Si MOSFETs: A high-temperature RF study for low-voltage low-power applications M Emam, JP Raskin IEEE transactions on microwave theory and techniques 61 (4), 1496-1504, 2013 | 13 | 2013 |
| High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs C Urban, M Emam, C Sandow, QT Zhao, A Fox, JP Raskin, S Mantl 2009 Proceedings of the European Solid State Device Research Conference, 149-152, 2009 | 11 | 2009 |
| High temperature DC and RF behavior of partially depleted SOI versus deep n-well protected bulk MOSFETs M Emam, D Vanhoenacker-Janvier, JP Raskin 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF …, 2009 | 11 | 2009 |
| Body-biasing control on zero-temperature-coefficient in partially depleted soi mosfet M El Kaamouchi, G Dambrine, MS Moussa, M Emam, ... 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF …, 2008 | 10 | 2008 |
| High temperature antenna switches in 130 nm SOI technology M Emam, M El Kaamouchi, MS Moussa, JP Raskin, ... 2007 IEEE International SOI Conference, 121-122, 2007 | 6 | 2007 |
| DC and RF temperature behavior of deep submicron Graded Channel MOSFETs M Emam, A Kumar, J Ida, F Danneville, D Vanhoenacker-Janvier, ... 2009 IEEE International SOI Conference, 1-2, 2009 | 5 | 2009 |
| RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs MKM Arshad, M Emam, V Kilchystka, F Andrieu, D Flandre, JP Raskin 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2012 | 4 | 2012 |
| RF antenna switch using dynamic threshold SOI MOSFET M Emam, JP Raskin, D Vanhoenacker-Janvier 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2011 | 4 | 2011 |
| Comparison between the behavior of submicron graded-channel SOI nMOSFETs with fully-and partially-depleted operations in a wide temperature range M de Souza, M Emam, D Vanhoenacker-Janvier, JP Raskin, D Flandre, ... 2010 IEEE International SOI Conference (SOI), 1-2, 2010 | 4 | 2010 |
| Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs M Emam, MA Pavanello, F Danneville, D Vanhoenacker-Janvier, ... 2009 Proceedings of the European Solid State Device Research Conference, 125-128, 2009 | 4 | 2009 |
| Zero temperature coefficient of current gain cutoff frequency and maximum oscillation frequency for various SOI and Si bulk MOSFETs M Emam, D Vahoenacker-Janvier, JP Raskin ECS Transactions 35 (5), 129, 2011 | 3 | 2011 |
| Thermal noise in MOSFETs: A two-or a three-parameter noise model? M Emam, P Sakalas, D Vanhoenacker-Janvier, JP Raskin, TC Lim, ... IEEE transactions on electron devices 57 (5), 1188-1191, 2010 | 3 | 2010 |
Jean-Pierre RaskinUniversité catholique de Louvain, Engineering School of LouvainVerified email at uclouvain.be
