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Dr Pown M
Dr Pown M
Sri Sai Ram Institute of Technology, Chennai
Verified email at sairamit.edu.in
Title
Cited by
Cited by
Year
Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
M Pown, B Lakshmi
IEEE Journal of the Electron Devices Society 8, 1397-1403, 2020
182020
Design of band pass filter using active inductor for RF receiver front-end
D Selvathi, M Pown
2014 International Conference on Communication and Network Technologies, 296-301, 2014
142014
Design and Analysis of UWB Down-Conversion Mixer with Linearization Techniques
D Selvathi, M Pown, S Manjula
WSEAS Transactions on Circuits and Systems 13, 202-207, 2014
102014
Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers
M Pown, B Lakshmi
Journal of Computational Electronics 16 (3), 676-684, 2017
72017
Investigation of Homo and Hetero-Junction Double-Gate Tunnel-FET-Based Adiabatic Inverter Circuits
M Pown, S Sandeep, B Lakshmi
IETE Journal of Research, 1-9, 2020
52020
Investigation of ft and f max in Si and Si1–x Ge x based single and dual material double-gate Tunnel FETs for RF applications
M Pown, B Lakshmi
Advances in Natural Sciences: Nanoscience and Nanotechnology 7 (2), 025006, 2016
52016
Design of Universal Logic Gates using Homo and Hetero-Junction Double Gate TFETs with Pseudo-Derived Logic
L Boggarapu, SP Kumar K, P M, B Lakshmi
INTERNATIONAL JOURNAL OF ELECTRONICS, 2022
12022
Tunnel Field Effect Transistors for Digital and Analog Applications: A Review
S Poorvasha, M Pown, B Lakshmi
Indian Journal of Science and Technology 10 (13), 2017
12017
Impact of underlap variation on the analog parameters of high- κ gate dielectric based double gate tunnel FETs
BL Viral Gokani, Roop Narayan Goswami, M. Pown
International Journal of Applied Engineering Research 10 (92), 268-273, 2015
2015
Stability Analysis Of Homo And Hetero-Junction Based TFET SRAMS
M Pown, B Lakshmi
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