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Vafa Aliyeva
Vafa Aliyeva
Institute of Physics, National Academy of Sciences of Azerbaijan
Verified email at physics.science.az
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Cited by
Year
Structural phase transition in TlGaSe2 under high pressure
SH Jabarov, TG Mammadov, AI Mammadov, SE Kichanov, VB Aliyeva, ...
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques …, 2015
322015
High pressure Raman study of layered semiconductor TlGaSe2
SH Jabarov, VB Aliyeva, TG Mammadov, AI Mammadov, SE Kichanov, ...
Materials Science-Poland 36 (2), 203-208, 2018
262018
Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor
MHY Seyidov, FA Mikailzade, T Uzun, AP Odrinsky, E Yakar, VB Aliyeva, ...
Physica B: Condensed Matter 483, 82-89, 2016
192016
Photoelectric activity of defects in La-doped layered TlInS2 crystals
MHY Seyidov, RA Suleymanov, E Acar, AP Odrinsky, TG Mammadov, ...
Low Temperature Physics 40 (9), 830-836, 2014
72014
Magnetodielectric effects in Co-implanted TlInS2 and TlGaSe2 crystals
F Mikailzade, M Maksutoglu, RI Khaibullin, VF Valeev, VI Nuzhdin, ...
Phase Transitions 89 (6), 568-577, 2016
62016
J. Surf. Invest. X-ray, Synchrotron Neutron Tech.
SH Jabarov, TG Mammadov, AI Mammadov, SE Kichanov, VB Aliyeva, ...
62015
Polarization switching in undoped and La-doped TlInS2 ferroelectric-semiconductors
MHY Seyidov, FA Mikailzade, RA Suleymanov, VB Aliyeva, ...
Physica B: Condensed Matter 526, 45-53, 2017
52017
Photovoltaic currents and activity of structural defects in a ferroelectric–semiconductor TlInS2: La single crystal
AP Odrinskii, MHY Seyidov, RA Suleymanov, TG Mammadov, VB Aliyeva
Physics of the Solid State 58, 716-722, 2016
52016
Charge transfer in solid solutions Bi0. 9Sb0. doped with Mn
AI Najafov, TG Mammadov, KV Aliguliyeva, SS Gahramanov, VB Aliyeva, ...
Physics of the Solid State 65 (9), 2023
2023
Role of defects in polarization switching of undoped and La-doped TlInS2 ferroelectric–semiconductors
VB Aliyeva, TG Mammadov, FA Mikailzade, MM Shirinov, MHY Seyidov
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