| Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces B Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ... Journal of Physics D: Applied Physics 47 (17), 175103, 2014 | 95 | 2014 |
| Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan Applied Physics Express 4 (11), 114102, 2011 | 90 | 2011 |
| p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers H Hahn, B Reuters, A Pooth, B Hollaender, M Heuken, H Kalisch, ... Electron Devices, IEEE Transactions on 60 (10), 3005-3011, 2013 | 85 | 2013 |
| The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ... Semiconductor Science and Technology 29 (11), 115012, 2014 | 82 | 2014 |
| Gallium phosphide-on-silicon dioxide photonic devices K Schneider, P Welter, Y Baumgartner, H Hahn, L Czornomaz, P Seidler Journal of Lightwave Technology 36 (14), 2994-3002, 2018 | 73 | 2018 |
| First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors H Hahn, B Reuters, S Kotzea, G Lukens, S Geipel, H Kalisch, A Vescan Device Research Conference (DRC), 2014 72nd Annual, 259-260, 2014 | 70 | 2014 |
| Optomechanics with one-dimensional gallium phosphide photonic crystal cavities K Schneider, Y Baumgartner, S Hönl, P Welter, H Hahn, DJ Wilson, ... Optica 6 (5), 577-584, 2019 | 63 | 2019 |
| Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs G Lükens, H Hahn, H Kalisch, A Vescan IEEE Transactions on Electron Devices 65 (9), 3732-3738, 2018 | 55 | 2018 |
| Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers B Reuters, A Wille, N Ketteniss, H Hahn, B Holländer, M Heuken, ... Journal of Electronic Materials 42 (5), 826-832, 2013 | 49 | 2013 |
| First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET H Hahn, B Reuters, A Wille, N Ketteniss, F Benkhelifa, O Ambacher, ... Semiconductor Science and Technology 27 (5), 055004, 2012 | 43 | 2012 |
| Monolithically Integrated CMOS-Compatible III–V on Silicon Lasers M Seifried, G Villares, Y Baumgartner, H Hahn, M Halter, F Horst, D Caimi, ... IEEE Journal of Selected Topics in Quantum Electronics 24 (6), 1-9, 2018 | 34 | 2018 |
| Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect … H Hahn, B Reuters, S Geipel, M Schauerte, F Benkhelifa, O Ambacher, ... Journal of Applied Physics 117 (10), 104508, 2015 | 30 | 2015 |
| Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V H Hahn, F Benkhelifa, O Ambacher, F Brunner, A Noculak, H Kalisch, ... IEEE Transactions on Electron Devices 62 (2), 538-545, 2014 | 30 | 2014 |
| AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal H Hahn, B Reuters, H Kalisch, A Vescan Semiconductor Science and Technology 28 (7), 074017, 2013 | 28 | 2013 |
| Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma S Hönl, H Hahn, Y Baumgartner, L Czornomaz, P Seidler Journal of Physics D: Applied Physics 51 (18), 185203, 2018 | 26 | 2018 |
| Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates X Li, K Geens, D Wellekens, M Zhao, A Magnani, N Amirifar, B Bakeroot, ... IEEE Transactions on Semiconductor Manufacturing 33 (4), 534-538, 2020 | 25 | 2020 |
| A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance H Hahn, V Deshpande, E Caruso, S Sant, E O’Connor, Y Baumgartner, ... Electron Devices Meeting (IEDM), 2017 IEEE International, 2017 | 24 | 2017 |
| Influence of mask material and process parameters on etch angle in a chlorine-based GaN dry etch H Hahn, JB Gruis, N Ketteniss, F Urbain, H Kalisch, A Vescan Journal of Vacuum Science & Technology A 30 (5), 051302, 2012 | 24 | 2012 |
| Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates B Reuters, J Strate, H Hahn, M Finken, A Wille, M Heuken, H Kalisch, ... Journal of Crystal Growth 391, 33-40, 2014 | 23 | 2014 |
| First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts V Deshpande, H Hahn, E O'Connor, Y Baumgartner, M Sousa, D Caimi, ... VLSI Technology, 2017 Symposium on, T74-T75, 2017 | 21 | 2017 |
Andrei VescanRWTH AachenVerified email at cst.rwth-aachen.de
