A 45nm logic technology with high-k+ metal gate transistors, strained silicon, 9 Cu interconnect layers, 193nm dry patterning, and 100% Pb-free packaging K Mistry, C Allen, C Auth, B Beattie, D Bergstrom, M Bost, M Brazier, ... 2007 IEEE International Electron Devices Meeting, 247-250, 2007 | 1703 | 2007 |
A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors C Auth, C Allen, A Blattner, D Bergstrom, M Brazier, M Bost, M Buehler, ... 2012 symposium on VLSI technology (VLSIT), 131-132, 2012 | 1000 | 2012 |
Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering JE Greene, JE Sundgren, L Hultman, I Petrov, DB Bergstrom Applied physics letters 67 (20), 2928-2930, 1995 | 444 | 1995 |
A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate … C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017 | 415 | 2017 |
High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors P Packan, S Akbar, M Armstrong, D Bergstrom, M Brazier, H Deshpande, ... 2009 IEEE international electron devices meeting (IEDM), 1-4, 2009 | 288 | 2009 |
High‐flux low‐energy (≂20 eV) N+2 ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation L Hultman, JE Sundgren, JE Greene, DB Bergstrom, I Petrov Journal of Applied Physics 78 (9), 5395-5403, 1995 | 288 | 1995 |
Ion-assisted growth of Ti1− xAlxN/Ti1− yNbyN multilayers by combined cathodic-arc/magnetron-sputter deposition I Petrov, P Losbichler, D Bergstrom, JE Greene, WD Münz, T Hurkmans, ... Thin Solid Films 302 (1-2), 179-192, 1997 | 125 | 1997 |
45nm Transistor Reliability. J Hicks, D Bergstrom, M Hattendorf, J Jopling, J Maiz, S Pae, C Prasad, ... Intel Technology Journal 12 (2), 2008 | 122 | 2008 |
Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures DB Bergstrom, CJ Wiegand US Patent 11,063,151, 2021 | 52 | 2021 |
Origin of compositional variations in sputter‐deposited TixW1−x diffusion barrier layers DB Bergstrom, F Tian, I Petrov, J Moser, JE Greene Applied physics letters 67 (21), 3102-3104, 1995 | 42 | 1995 |
Morphology and microstructure of epitaxial Cu (001) films grown by primary ion deposition on Si and Ge substrates BW Karr, YW Kim, I Petrov, DB Bergstrom, DG Cahill, JE Greene, ... Journal of applied physics 80 (12), 6699-6705, 1996 | 29 | 1996 |
Single-phase polycrystalline Ti1− xWxN alloys (0⩽ x⩽ 0.7) grown by UHV reactive magnetron sputtering: Microstructure and physical properties JH Moser, F Tian, O Haller, DB Bergstrom, I Petrov, JE Greene, C Wiemer Thin solid films 253 (1-2), 445-450, 1994 | 26 | 1994 |
Tungsten gates for non-planar transistors SS Pradhan, DB Bergstrom, JS Chun, J Chiu US Patent 9,177,867, 2015 | 23 | 2015 |
metal/diffusion-barrier bilayers: Interfacial reaction pathways and kinetics during annealing DB Bergstrom, I Petrov, JE Greene Journal of applied physics 82 (5), 2312-2322, 1997 | 21 | 1997 |
Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers JS Chun, JRA Carlsson, P Desjardins, DB Bergstrom, I Petrov, JE Greene, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (1 …, 2001 | 20 | 2001 |
Intel 4 CMOS technology featuring advanced FinFET transistors optimized for high density and high-performance computing B Sell, S An, J Armstrong, D Bahr, B Bains, R Bambery, K Bang, D Basu, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 19 | 2022 |
Method of forming a wrap-around contact on a semiconductor device JS Leib, RT Troeger, D Bergstrom US Patent 9,704,744, 2017 | 16 | 2017 |
Tungsten gates for non-planar transistors SS Pradhan, DB Bergstrom, JS Chun, J Chiu US Patent 9,580,776, 2017 | 10 | 2017 |
Tungsten gates for non-planar transistors SS Pradhan, DB Bergstrom, JS Chun, J Chiu US Patent 9,637,810, 2017 | 9 | 2017 |
Reaction paths and kinetics of aluminide formation in Al/epitaxial‐W (001) model diffusion barrier systems DB Bergstrom, I Petrov, LH Allen, JE Greene Journal of applied physics 78 (1), 194-203, 1995 | 9 | 1995 |