Follow
Bongkwon Son
Bongkwon Son
Research Engineer, Samsung Advanced Institute of Technology, South Korea
Verified email at e.ntu.edu.sg
Title
Cited by
Cited by
Year
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 Ám
H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ...
Optics express 28 (7), 10280-10293, 2020
842020
Dark current analysis of germanium-on-insulator vertical pin photodetectors with varying threading dislocation density
B Son*, Y Lin, KH Lee, Q Chen, CS Tan
Journal of Applied Physics 127 (20), 203105, 2020
432020
High performance flexible visible-blind ultraviolet photodetectors with two-dimensional electron gas based on unconventional release strategy
YY Zhang, YX Zheng, JY Lai, JH Seo, KH Lee, CS Tan, S An, SH Shin, ...
ACS nano 15 (5), 8386-8396, 2021
422021
Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
S Ghosh, KC Lin, CH Tsai, H Kumar, Q Chen, L Zhang, B Son, CS Tan, ...
Micromachines 11 (9), 795, 2020
322020
High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeO x surface passivation
B Son*, Y Lin, KH Lee, Y Wang, S Wu, CS Tan*
Optics Express 28 (16), 23978-23990, 2020
322020
Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors
S Ghosh, KC Lin, CH Tsai, KH Lee, Q Chen, B Son, B Mukhopadhyay, ...
Optics Express 28 (16), 23739-23747, 2020
282020
Sub-mA/cm 2 Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate
Y Lin†*, B Son†, KH Lee, J Michel, CS Tan*
IEEE Transactions on Electron Devices 68 (4), 1730-1737, 2021
162021
Direct chemisorption-assisted nanotransfer printing with wafer-scale uniformity and controllability
ZJ Zhao†, SH Shin†, SY Lee, B Son, Y Liao, S Hwang, S Jeon, H Kang, ...
ACS nano 16 (1), 378-385, 2022
152022
Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improved responsivity and specific detectivity at 1,550 nm
B Son*, H Zhou, Y Lin, KH Lee, CS Tan*
Optics Express 29 (11), 16520-16533, 2021
132021
Surface plasmon enhanced GeSn photodetectors operating at 2 Ám
H Zhou, L Zhang, J Tong, S Wu*, B Son, Q Chen, DH Zhang, CS Tan
Optics express 29 (6), 8498-8509, 2021
132021
Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth
Y Lin*, KH Lee, B Son, CS Tan*
Optics Express 29 (3), 2940-2952, 2021
132021
A highly ordered and damage-free Ge inverted pyramid array structure for broadband antireflection in the mid-infrared
SH Shin†, Y Liao†, B Son, ZJ Zhao, JH Jeong, CS Tan, M Kim*
Journal of Materials Chemistry C 9 (31), 9884-9891, 2021
132021
Efficient Avalanche Photodiodes with a WSe2/MoS2 Heterostructure via Two-Photon Absorption
B Son, Y Wang, M Luo, K Lu, Y Kim, HJ Joo, Y Yi, C Wang, QJ Wang, ...
Nano Letters 22 (23), 9516-9522, 2022
102022
Insights into the origins of guided microtrenches and Microholes/rings from Sn segregation in germanium–tin epilayers
S Wu*, L Zhang, B Son, Q Chen, H Zhou, CS Tan*
The Journal of Physical Chemistry C 124 (37), 20035-20045, 2020
102020
Growth and characterizations of GeSn films with high Sn composition by chemical vapor deposition (CVD) using Ge2H6 and SnCl4 for mid-IR applications
L Zhang, Q Chen, S Wu, BK Son, KH Lee, GY Chong, CS Tan
ECS Transactions 98 (5), 91, 2020
82020
The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
Q Chen*, L Zhang, H Zhou, W Li, BK Son, CS Tan*
Semiconductor Science and Technology 35 (2), 025008, 2020
72020
Metal-semiconductor-metal Photodetectors on a GeSn-on-insulator Platform for 2 Ám Applications
B Son*, Y Lin, KH Lee, J Margetis, D Kohen, J Tolle, CS Tan*
IEEE Photonics Journal 14 (3), 1-6, 2022
62022
Grating and hole-array enhanced germanium lateral pin photodetectors on an insulator platform
H Zhou, Q Chen, S Wu*, L Zhang, X Guo, B Son, CS Tan*
Optics Express 30 (4), 4706-4717, 2022
62022
Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 Ám
S Wu, B Son, L Zhang, Q Chen, H Zhou, SCK Goh, CS Tan
Journal of Alloys and Compounds 872, 159696, 2021
62021
Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform
BK Son, Y Lin, W Li, KH Lee, J Margetis, D Kohen, J Tolle, L Zhang, ...
Optical Components and Materials XVI 10914, 244-250, 2019
62019
The system can't perform the operation now. Try again later.
Articles 1–20