| Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s SA Blokhin, JA Lott, A Mutig, G Fiol, NN Ledentsov, MV Maximov, ... Electronics Letters 45 (10), 1, 2009 | 180 | 2009 |
| AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs SA Blokhin, AV Sakharov, AM Nadtochy, AS Pauysov, MV Maximov, ... Semiconductors 43, 514-518, 2009 | 178 | 2009 |
| High speed high temperature stable 980 nm VCSELs operating error-free at 25 Gbit/s up to 85° C for short reach optical interconnects A Mutig, W Hofmann, SA Blokhin, P Wolf, P Moser, AM Nadtochiy, ... Optical Fiber Communication Conference, OTuQ3, 2011 | 89 | 2011 |
| Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers A Mutig, SA Blokhin, AM Nadtochiy, G Fiol, JA Lott, VA Shchukin, ... Applied Physics Letters 95 (13), 2009 | 63 | 2009 |
| 6-mW single-mode high-speed 1550-nm wafer-fused VCSELs for DWDM application AYE A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. G. Gladyshev, S. A ... IEEE Journal of Quantum Electronics 53 (6), 2400808, 2017 | 61* | 2017 |
| Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots SA Blokhin, NA Maleev, AG Kuzmenkov, AV Sakharov, MM Kulagina, ... IEEE journal of quantum electronics 42 (9), 851-858, 2006 | 59 | 2006 |
| Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects JA Lott, AS Payusov, SA Blokhin, P Moser, NN Ledentsov, D Bimberg physica status solidi c 9 (2), 290-293, 2012 | 50 | 2012 |
| Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates ES Semenova, AE Zhukov, SS Mikhrin, AY Egorov, VA Odnoblyudov, ... Nanotechnology 15 (4), S283, 2004 | 48 | 2004 |
| Highly temperature-stable modulation characteristics of multioxide-aperture high-speed 980 nm vertical cavity surface emitting lasers A Mutig, JA Lott, SA Blokhin, P Wolf, P Moser, W Hofmann, AM Nadtochiy, ... Applied Physics Letters 97 (15), 2010 | 36 | 2010 |
| High-spatial-resolution near-field photoluminescence and imaging of whispering-gallery modes in semiconductor microdisks with embedded quantum dots AM Mintairov, Y Chu, Y He, S Blokhin, A Nadtochy, M Maximov, ... Physical Review B 77 (19), 195322, 2008 | 34 | 2008 |
| Reliability performance of 25 Gbit s− 1 850 nm vertical-cavity surface-emitting lasers LY Karachinsky, SA Blokhin, II Novikov, NA Maleev, AG Kuzmenkov, ... Semiconductor science and technology 28 (6), 065010, 2013 | 33 | 2013 |
| Progress on single mode VCSELs for data-and tele-communications NN Ledentsov, JA Lott, JR Kropp, VA Shchukin, D Bimberg, P Moser, ... Vertical-Cavity Surface-Emitting Lasers XVI 8276, 160-170, 2012 | 31 | 2012 |
| 20 Gbit/s error free transmission with~ 850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions JA Lott, VA Shchukin, NN Ledentsov, A Stinz, F Hopfer, A Mutig, G Fiol, ... Physics and Simulation of Optoelectronic Devices XVII 7211, 268-279, 2009 | 28 | 2009 |
| High power single mode 1300-nm superlattice based VCSEL: Impact of the buried tunnel junction diameter on performance SA Blokhin, AV Babichev, AG Gladyshev, LY Karachinsky, II Novikov, ... IEEE Journal of Quantum Electronics 58 (2), 1-15, 2022 | 27 | 2022 |
| Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots NV Kryzhanovskaya, EI Moiseev, FI Zubov, AM Mozharov, MV Maximov, ... Photonics Research 7 (6), 664-668, 2019 | 25 | 2019 |
| Wafer‐fused 1300 nm VCSELs with an active region based on superlattice S Blokhin, A Babichev, A Gladyshev, L Karachinsky, I Novikov, A Blokhin, ... Electronics Letters 57 (18), 697-698, 2021 | 21 | 2021 |
| Evaluation of energy-to-data ratio of quantum-dot microdisk lasers under direct modulation NV Kryzhanovskaya, EI Moiseev, FI Zubov, AM Mozharov, MV Maximov, ... Journal of Applied Physics 126 (6), 2019 | 20 | 2019 |
| Modulation characteristics of high-speed and high-temperature stable 980 nm range VCSELs operating error free at 25 Gbit/s up to 85° C A Mutig, JA Lott, SA Blokhin, P Moser, P Wolf, W Hofmann, AM Nadtochiy, ... IEEE Journal of Selected Topics in Quantum Electronics 17 (6), 1568-1575, 2011 | 19 | 2011 |
| Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR NA Maleev, AG Kuz’menkov, MM Kulagina, YM Zadiranov, AP Vasil’ev, ... Semiconductors 47, 993-996, 2013 | 18 | 2013 |
| Monolithic electro‐optically modulated vertical cavity surface emitting laser with 10 Gb/s open‐eye operation TD Germann, A Strittmatter, A Mutig, AM Nadtochiy, JA Lott, SA Blokhin, ... physica status solidi c 7 (10), 2552-2554, 2010 | 18 | 2010 |
