Epitaxial graphene on 3C-SiC (111) pseudosubstrate: Structural and electronic properties A Ouerghi, M Marangolo, R Belkhou, S El Moussaoui, MG Silly, M Eddrief, ... Physical Review B 82 (12), 125445, 2010 | 69 | 2010 |
Single InAsPInP quantum dots as telecommunications-band photon sources D Elvira, R Hostein, B Fain, L Monniello, A Michon, G Beaudoin, R Braive, ... Physical Review B 84 (19), 195302, 2011 | 35 | 2011 |
Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions C Bayram, N Péré-Laperne, R McClintock, B Fain, M Razeghi Applied Physics Letters 94 (12), 121902, 2009 | 32 | 2009 |
III-nitride avalanche photodiodes R McClintock, JL Pau, C Bayram, B Fain, P Giedraitis, M Razeghi, ... Quantum Sensing and Nanophotonic Devices VI 7222, 72220U, 2009 | 21 | 2009 |
Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near D Elvira, A Michon, B Fain, G Patriarche, G Beaudoin, I Robert-Philip, ... Applied Physics Letters 97 (13), 131907, 2010 | 19 | 2010 |
Discretization of Electronic States in Large Multilevel Quantum Dots Probed by Scanning Tunneling Spectroscopy B Fain, I Robert-Philip, A Beveratos, C David, ZZ Wang, I Sagnes, ... Physical review letters 108 (12), 126808, 2012 | 18 | 2012 |
Electronic structure of cleaved InAsP/InP (001) quantum dots measured by scanning tunneling spectroscopy B Fain, JC Girard, D Elvira, C David, G Beaudoin, A Beveratos, ... Applied Physics Letters 97 (17), 171903, 2010 | 13 | 2010 |
Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions C Bayram, B Fain, N Péré-Laperne, RP McClintock, M Razeghi Quantum Sensing and Nanophotonic Devices VI 7222, 722212, 2009 | 7 | 2009 |
High-damped accelerometer based on squeeze-film damping and piezoresistive nanogauge detection for vibrating environments PRPR Bruno Fain, Aboubacar Chaehoi, Thierry Verdot, Frédéric Souchon ... Transducers 2017, Kaohsiung, Taiwan, pp 603-606, 2017 | 6* | 2017 |
Structural analysis of site-controlled InAs/InP quantum dots B Fain, D Elvira, L Le Gratiet, L Largeau, G Beaudoin, D Troadec, I Abram, ... Journal of Crystal Growth 334 (1), 37-39, 2011 | 6 | 2011 |
CMOS compatible nanoscale thermal conductivity detector for gas sensing applications O Legendre, J Ruellan, M Gely, J Arcamone, L Duraffourg, F Ricoul, ... Sensors and Actuators A: Physical 261, 9-13, 2017 | 4 | 2017 |
Real space observation of electronic coupling between self-assembled quantum dots G Rodary, L Bernardi, C David, B Fain, A Lemaître, JC Girard Nano letters, 2019 | 3 | 2019 |
Dynamic control of an accelerometer bandwidth through tunable damping factor and effective moment of inertia PRGJ Bruno Fain, Frédéric Souchon, Audrey Berthelot, Romain Anciant MEMS 2018, Belfast, United Kingdom, pp 948-951, 2018 | 2* | 2018 |
Wafer-level experimental study of residual stress in AlN-based bimorph piezoelectric micromachined ultrasonic transducer J Jung, JC Bastien, A Lefevre, K Benedetto, R Dejaeger, F Blard, B Fain Engineering Research Express 2 (4), 045013, 2020 | 1 | 2020 |
One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications N Gogneau, L Le Gratiet, R Hostein, B Fain, L Largeau, G Patriarche, ... MRS Online Proceedings Library Archive 1228, 2009 | 1 | 2009 |
Capacitive micromachined ultrasonic transducers leak detection by dye penetrant test A Nowodzinski, O Ndjoye-Kogou, V Mourier, G Nonglaton, D Bouchu, ... Microelectronics Reliability 114, 113908, 2020 | | 2020 |
Analysis of polycyclic aromatic hydrocarbons (pah) using gas chromatography and NEMS detector SVBF Olivier Legendre, Carine Ladner, Eric Ollier, Thomas Alava, Florence Ricoul Proceedings of 20th International Conference on Solid-State Sensors …, 2019 | | 2019 |
Method of fabricating a mems and/or nems structure comprising at least two elements suspended from a support at different distances from said support F Bruno, G Ladner, T Alava US Patent App. 15/873,136, 2018 | | 2018 |
Suppression of the resonance of vacuum-sealed accelerometers: A comparison of two different strategies B Fain, F Souchon, A Berthelot, R Anciant, P Robert, G Jourdan 2018 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL …, 2018 | | 2018 |
Dynamic pressure sensor with improved operation F Bruno, P Robert, T Verdot US Patent App. 15/536,779, 2017 | | 2017 |