Bruno Fain
Bruno Fain
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Epitaxial graphene on 3C-SiC (111) pseudosubstrate: Structural and electronic properties
A Ouerghi, M Marangolo, R Belkhou, S El Moussaoui, MG Silly, M Eddrief, ...
Physical Review B 82 (12), 125445, 2010
Single InAsPInP quantum dots as telecommunications-band photon sources
D Elvira, R Hostein, B Fain, L Monniello, A Michon, G Beaudoin, R Braive, ...
Physical Review B 84 (19), 195302, 2011
Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions
C Bayram, N Péré-Laperne, R McClintock, B Fain, M Razeghi
Applied Physics Letters 94 (12), 121902, 2009
III-nitride avalanche photodiodes
R McClintock, JL Pau, C Bayram, B Fain, P Giedraitis, M Razeghi, ...
Quantum Sensing and Nanophotonic Devices VI 7222, 72220U, 2009
Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near
D Elvira, A Michon, B Fain, G Patriarche, G Beaudoin, I Robert-Philip, ...
Applied Physics Letters 97 (13), 131907, 2010
Discretization of Electronic States in Large Multilevel Quantum Dots Probed by Scanning Tunneling Spectroscopy
B Fain, I Robert-Philip, A Beveratos, C David, ZZ Wang, I Sagnes, ...
Physical review letters 108 (12), 126808, 2012
Electronic structure of cleaved InAsP/InP (001) quantum dots measured by scanning tunneling spectroscopy
B Fain, JC Girard, D Elvira, C David, G Beaudoin, A Beveratos, ...
Applied Physics Letters 97 (17), 171903, 2010
Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions
C Bayram, B Fain, N Péré-Laperne, RP McClintock, M Razeghi
Quantum Sensing and Nanophotonic Devices VI 7222, 722212, 2009
High-damped accelerometer based on squeeze-film damping and piezoresistive nanogauge detection for vibrating environments
PRPR Bruno Fain, Aboubacar Chaehoi, Thierry Verdot, Frédéric Souchon ...
Transducers 2017, Kaohsiung, Taiwan, pp 603-606, 2017
Structural analysis of site-controlled InAs/InP quantum dots
B Fain, D Elvira, L Le Gratiet, L Largeau, G Beaudoin, D Troadec, I Abram, ...
Journal of Crystal Growth 334 (1), 37-39, 2011
CMOS compatible nanoscale thermal conductivity detector for gas sensing applications
O Legendre, J Ruellan, M Gely, J Arcamone, L Duraffourg, F Ricoul, ...
Sensors and Actuators A: Physical 261, 9-13, 2017
Real space observation of electronic coupling between self-assembled quantum dots
G Rodary, L Bernardi, C David, B Fain, A Lemaître, JC Girard
Nano letters, 2019
Dynamic control of an accelerometer bandwidth through tunable damping factor and effective moment of inertia
PRGJ Bruno Fain, Frédéric Souchon, Audrey Berthelot, Romain Anciant
MEMS 2018, Belfast, United Kingdom, pp 948-951, 2018
Wafer-level experimental study of residual stress in AlN-based bimorph piezoelectric micromachined ultrasonic transducer
J Jung, JC Bastien, A Lefevre, K Benedetto, R Dejaeger, F Blard, B Fain
Engineering Research Express 2 (4), 045013, 2020
One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications
N Gogneau, L Le Gratiet, R Hostein, B Fain, L Largeau, G Patriarche, ...
MRS Online Proceedings Library Archive 1228, 2009
Capacitive micromachined ultrasonic transducers leak detection by dye penetrant test
A Nowodzinski, O Ndjoye-Kogou, V Mourier, G Nonglaton, D Bouchu, ...
Microelectronics Reliability 114, 113908, 2020
Analysis of polycyclic aromatic hydrocarbons (pah) using gas chromatography and NEMS detector
SVBF Olivier Legendre, Carine Ladner, Eric Ollier, Thomas Alava, Florence Ricoul
Proceedings of 20th International Conference on Solid-State Sensors …, 2019
Method of fabricating a mems and/or nems structure comprising at least two elements suspended from a support at different distances from said support
F Bruno, G Ladner, T Alava
US Patent App. 15/873,136, 2018
Suppression of the resonance of vacuum-sealed accelerometers: A comparison of two different strategies
B Fain, F Souchon, A Berthelot, R Anciant, P Robert, G Jourdan
2018 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL …, 2018
Dynamic pressure sensor with improved operation
F Bruno, P Robert, T Verdot
US Patent App. 15/536,779, 2017
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