| CMOS scaling into the nanometer regime Y Taur, DA Buchanan, W Chen, DJ Frank, KE Ismail, SH Lo, ... Proceedings of the IEEE 85 (4), 486-504, 1997 | 1266 | 1997 |
| Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's SH Lo, DA Buchanan, Y Taur, W Wang IEEE electron device letters 18 (5), 209-211, 1997 | 1131 | 1997 |
| Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ... Microelectronic Engineering 59 (1-4), 341-349, 2001 | 542 | 2001 |
| Scaling the gate dielectric: materials, integration, and reliability DA Buchanan IBM journal of research and development 43 (3), 245-264, 1999 | 536 | 1999 |
| Precursor source mixtures DA Buchanan, DA Neumayer US Patent 6,984,591, 2006 | 505 | 2006 |
| Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen E Cartier, JH Stathis, DA Buchanan Applied physics letters 63 (11), 1510-1512, 1993 | 464 | 1993 |
| Volatile and non-volatile memories in silicon with nano-crystal storage S Tiwari, F Rana, K Chan, H Hanafi, W Chan, D Buchanan Proceedings of International Electron Devices Meeting, 521-524, 1995 | 425 | 1995 |
| Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 379 | 2001 |
| Diamond-like carbon films from a hydrocarbon helium plasma FD Bailey, DA Buchanan, AC Callegari, HM Clearfield, FE Doany, ... US Patent 5,470,661, 1995 | 306 | 1995 |
| Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides SH Lo, DA Buchanan, Y Taur IBM Journal of Research and Development 43 (3), 327-337, 1999 | 294 | 1999 |
| Self‐consistent modeling of accumulation layers and tunneling currents through very thin oxides F Rana, S Tiwari, DA Buchanan Applied physics letters 69 (8), 1104-1106, 1996 | 270 | 1996 |
| Anode hole injection and trapping in silicon dioxide DJ DiMaria, E Cartier, DA Buchanan Journal of applied physics 80 (1), 304-317, 1996 | 260 | 1996 |
| Interface and bulk trap generation in metal‐oxide‐semiconductor capacitors DA Buchanan, DJ DiMaria Journal of applied physics 67 (12), 7439-7452, 1990 | 186 | 1990 |
| CMOS scaling into the 21st century: 0.1 µm and beyond Y Taur, YJ Mii, DJ Frank, HS Wong, DA Buchanan, SJ Wind, SA Rishton, ... IBM Journal of Research and Development 39 (1.2), 245-260, 1995 | 183 | 1995 |
| 80 nm polysilicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ... Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International …, 2000 | 176* | 2000 |
| Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment A Callegari, PD Hoh, DA Buchanan, D Lacey Applied physics letters 54 (4), 332-334, 1989 | 169 | 1989 |
| Interfacial oxidation process for high-k gate dielectric process integration AW Ballantine, DA Buchanan, EA Cartier, KK Chan, MW Copel, ... US Patent 6,444,592, 2002 | 148 | 2002 |
| Interface states induced by the presence of trapped holes near the silicon–silicon‐dioxide interface DJ DiMaria, DA Buchanan, JH Stathis, RE Stahlbush Journal of applied physics 77 (5), 2032-2040, 1995 | 116 | 1995 |
| Hot‐electron‐induced hydrogen redistribution and defect generation in metal‐oxide‐semiconductor capacitors DA Buchanan, AD Marwick, DJ DiMaria, L Dori Journal of applied physics 76 (6), 3595-3608, 1994 | 111 | 1994 |
| Reliability and integration of ultra-thin gate dielectrics for advanced CMOS DA Buchanan, SH Lo Microelectronic engineering 36 (1-4), 13-20, 1997 | 106 | 1997 |
Eduard A CartierIBM Research, T. J. Watson Research CenterVerified email at us.ibm.com
