| Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs J Alvarado, E Boufouss, V Kilchytska, D Flandre Microelectronics reliability 50 (9-11), 1852-1856, 2010 | 33 | 2010 |
| A 0.48mm25μW-10mW indoor/outdoor PV energy-harvesting management unit in a 65nm SoC based on a single bidirectional multi-gain/multi-mode switched-cap … D Bol, EH Boufouss, D Flandre, J De Vos ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015 | 24 | 2015 |
| Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference EH Boufouss, LA Francis, V Kilchytska, P Gérard, P Simon, D Flandre Sensors 13 (12), 17265-17280, 2013 | 14 | 2013 |
| A compact model for single event effects in PD SOI sub-micron MOSFETs J Alvarado, V Kilchytska, E Boufouss, BS Soto-Cruz, D Flandre IEEE Transactions on Nuclear Science 59 (4), 943-949, 2012 | 14 | 2012 |
| A compact model for single event effects in PD SOI sub-micron MOSFETs J Alvarado, V Kilchytska, E Boufouss, BS Soto-Cruz, D Flandre IEEE Transactions on Nuclear Science 59 (4), 943-949, 2012 | 14 | 2012 |
| High temperature and radiation hard CMOS SOI sub-threshold voltage reference E Boufouss, P Gérard, P Simon, LA Francis, D Flandre 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2013 | 12 | 2013 |
| Characterization and modelling of single event transients in LDMOS-SOI FETs J Alvarado, V Kilchytska, E Boufouss, D Flandre Microelectronics Reliability 51 (9-11), 2004-2009, 2011 | 6 | 2011 |
| Ultra low power CMOS circuits working in subthreshold regime for high temperature and radiation environments E Boufouss, L Francis, P Gerard, M Assaad High Temperature Electronics Network HiTEN2011, Oxford 2011, 2011 | 5 | 2011 |
| Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM E Boufouss, J Alvarado, D Flandre International Conference on High Temperature Electronics (HiTEC 2010 …, 2010 | 5 | 2010 |
| Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector M Assaad, E Boufouss, P Gerard, L Francis, D Flandre Electronics letters 48 (14), 842-844, 2012 | 4 | 2012 |
| Ultra Low Power CMOS Circuits Working in Subthreshold Regime for High Temperature and Radiation Environments M Assaad, E Boufouss, P Gérard, L Francis, D Flandre Proceedings of the International Conference and Exhibition on High …, 2011 | 4 | 2011 |
| Modeling of single event transients and total dose in partially depleted SOI CMOS circuits JJ Alvarado Pulido, V Kilchytska, EH Boufouss, D Flandre EUROSOI 2010, 2010 | 4 | 2010 |
| The effects of gamma irradiation on micro-hotplates with integrated temperature sensing diodes LA Francis, N André, EH Boufouss, P Gérard, Z Ali, F Udrea, D Flandre Sensors for Extreme Harsh Environments 9113, 911302, 2014 | 2 | 2014 |
| Total Ionizing Dose Effects Sensitivity of Unsalicided Polysilicon Resistors MS Gorbunov, EH Boufouss, Z Li, B Vignon, MD van de Burgwal, L Berti, ... IEEE Transactions on Nuclear Science, 2024 | | 2024 |
| Single Event Effects Characterization Induced by Heavy Ions in 65-nm PLL SN Kim, S Zagrocki, EH Boufouss, B Vignon, L Berti, M Van De Burgwal, ... 2022 22nd European Conference on Radiation and Its Effects on Components and …, 2022 | | 2022 |
| Analog design in SOI for hostile environments and high temperatures D Flandre, V Kilchytska, EH Boufouss, JJ Alvarado Pulido EAMTA/CAMTA 2014, 2014 | | 2014 |
| Design of SOI CMOS circuits robust to combined effects of process corners variation, high temperature and radiations EH Boufouss UCL-Université Catholique de Louvain, 2014 | | 2014 |
| Harsh-environment behaviours and performances of advanced Silicon-on-Insulator CMOS sensors, transistors and circuits D Flandre, V Kilchytska, JJ Alvarado, EH Boufouss, B Rue, C Roda Neve, ... VII Workshop on Semiconductor and Micro & Nano Technology, SEMINATEC 2012, 2012 | | 2012 |
| Characterization and modeling of single event transients in LDMOS-SOI FETs JJ Alvarado Pulido, V Kilchytska, EH Boufouss, D Flandre 22nd European Symposium on Reliability of Electron Devices, Failure Physics …, 2011 | | 2011 |
| Extreme-environment behaviors and performances of advanced Silicon-on-Insulator CMOS sensors, transistors and circuits D Flandre, V Kilchytska, JJ Alvarado Pulido, EH Boufouss, M Assaad, ... 2nd International Conference on Advancements in Nuclear Instrumentation …, 2011 | | 2011 |
