Follow
Alain Dijkstra
Alain Dijkstra
Postdoctoral Researcher, Technical University of Munich
Verified email at wsi.tum.de
Title
Cited by
Cited by
Year
Direct-bandgap emission from hexagonal Ge and SiGe alloys
EMT Fadaly, A Dijkstra, JR Suckert, D Ziss, MAJ Van Tilburg, C Mao, ...
Nature 580 (7802), 205-209, 2020
3122020
Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
S Assali, A Dijkstra, A Li, S Koelling, MA Verheijen, L Gagliano, ...
Nano letters 17 (3), 1538-1544, 2017
952017
Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
S Assali, J Nicolas, S Mukherjee, A Dijkstra, O Moutanabbir
Applied Physics Letters 112 (25), 2018
892018
Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters
MS Seifner, A Dijkstra, J Bernardi, A Steiger-Thirsfeld, M Sistani, ...
ACS nano 13 (7), 8047-8054, 2019
452019
Kinetic control of morphology and composition in Ge/GeSn core/shell nanowires
S Assali, R Bergamaschini, E Scalise, MA Verheijen, M Albani, A Dijkstra, ...
ACS nano 14 (2), 2445-2455, 2020
242020
Nanowire polymer transfer for enhanced solar cell performance and lower cost
A Cavalli, A Dijkstra, JEM Haverkort, EPAM Bakkers
Nano-Structures & Nano-Objects 16, 59-62, 2018
232018
Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Semiconductors
S Assali, A Dijkstra, A Attiaoui, É Bouthillier, JEM Haverkort, ...
Physical Review Applied 15 (2), 024031, 2021
202021
Unveiling planar defects in hexagonal group IV materials
EMT Fadaly, A Marzegalli, Y Ren, L Sun, A Dijkstra, D De Matteis, ...
Nano Letters 21 (8), 3619-3625, 2021
162021
Epitaxial GeSn and its integration in MIR optoelectronics
S Assali, A Attiaoui, MRM Atalla, A Dijkstra, A Kumar, S Mukherjee, S Abdi, ...
CLEO: Science and Innovations, SM3M. 2, 2020
32020
Light emission from direct bandgap hexagonal SiGe
JEM Haverkort, Y Ren, A Dijkstra, E Fadaly, MA Verheijen, G Reithmaier, ...
Integrated Photonics Research, Silicon and Nanophotonics, ITu4I. 5, 2018
32018
Mid-infrared emission and absorption in strained and relaxed GeSn semiconductors
S Assali, A Dijkstra, A Attiaoui, É Bouthillier, JEM Haverkort, ...
arXiv e-prints, arXiv: 2004.13858, 2020
22020
Optical properties of direct band gap group IV semiconductors
A Dijkstra
12021
Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation)
D Busse, E Fadaly, VT van Lange, JR Suckert, A Dijkstra, M van Tilburg, ...
Novel In-Plane Semiconductor Lasers XIX 11301, 113010K, 2020
12020
Optical Matrix Element of Hexagonal Ge
VT Lange, A Dijkstra, EMT Fadaly, WHJ Peeters, MAJ Tilburg, E Bakkers, ...
CLEO: Science and Innovations, SM4H. 7, 2023
2023
Light-emitting or light-absorbing component
S Botti, F Bechstedt, JEM Haverkort, EPAM Bakkers, E Fadaly, A Dijkstra
US Patent App. 17/431,356, 2022
2022
Towards a Hexagonal SiGe Semiconductor Laser.
MAJ Tilburg, A Dijkstra, EMT Fadaly, VT Lange, MA Verheijen, JR Suckert, ...
CLEO: Science and Innovations, SM3M. 6, 2020
2020
Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe.
A Dijkstra, MAJ Tilburg, EMT Fadaly, VT Lange, MA Verheijen, JR Suckert, ...
CLEO: Applications and Technology, JW2F. 3, 2020
2020
Towards a Hexagonal SiGe Semiconductor Laser
MAJ van Tilburg, A Dijkstra, EMT Fadaly, VT van Lange, MA Verheijen, ...
2020 Conference on Lasers and Electro-Optics, CLEO 2020-Proceedings, 9192798, 2020
2020
Photoluminesence of Al2O3-passivated Hexagonal Silicon Germanium nanowires
NRS van Venrooij, A Dijkstra, JEM Haverkort
2019
Light Emission from Direct Bandgap Hexagonal Silicon Germanium
E Fadaly, A Dijkstra, JR Suckert, M Verheijen, S Koelling, J Finley, S Botti, ...
APS March Meeting Abstracts 2019, S11. 015, 2019
2019
The system can't perform the operation now. Try again later.
Articles 1–20