| 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance R Chu, A Corrion, M Chen, R Li, D Wong, D Zehnder, B Hughes, ... IEEE Electron Device Letters 32 (5), 632-634, 2011 | 468 | 2011 |
| Solar module array with reconfigurable tile RA Sherif, KS Boutros US Patent 6,350,944, 2002 | 286 | 2002 |
| Integrated semiconductor circuits on photo-active Germanium substrates KS Boutros, NH Karam, DD Krut, M Haddad US Patent 7,151,307, 2006 | 251 | 2006 |
| Schottky barrier engineering in III–V nitrides via the piezoelectric effect ET Yu, XZ Dang, LS Yu, D Qiao, PM Asbeck, SS Lau, GJ Sullivan, ... Applied physics letters 73 (13), 1880-1882, 1998 | 206 | 1998 |
| Effect of hydrogen on the indium incorporation in InGaN epitaxial films EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, ... Applied physics letters 70 (4), 461-463, 1997 | 187 | 1997 |
| Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition T Hashizume, E Alekseev, D Pavlidis, KS Boutros, J Redwing Journal of Applied Physics 88 (4), 1983-1986, 2000 | 156 | 2000 |
| Ni and Ti Schottky barriers on grown on SiC substrates LS Yu, DJ Qiao, QJ Xing, SS Lau, KS Boutros, JM Redwing Applied Physics Letters 73 (2), 238-240, 1998 | 148 | 1998 |
| Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor XZ Dang, PM Asbeck, ET Yu, GJ Sullivan, MY Chen, BT McDermott, ... Applied physics letters 74 (25), 3890-3892, 1999 | 143 | 1999 |
| Monolithic bypass-diode and solar-cell string assembly K Boutros, D Krut, N Karam US Patent App. 10/134,191, 2002 | 129 | 2002 |
| Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique SD Burnham, K Boutros, P Hashimoto, C Butler, DWS Wong, M Hu, ... physica status solidi c 7 (7‐8), 2010-2012, 2010 | 128 | 2010 |
| Growth and characterization of AlInGaN quaternary alloys FG McIntosh, KS Boutros, JC Roberts, SM Bedair, EL Piner, NA El‐Masry Applied physics letters 68 (1), 40-42, 1996 | 127 | 1996 |
| Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures XZ Dang, CD Wang, ET Yu, KS Boutros, JM Redwing Applied physics letters 72 (21), 2745-2747, 1998 | 119 | 1998 |
| GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz B Hughes, J Lazar, S Hulsey, D Zehnder, D Matic, K Boutros 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012 | 82 | 2012 |
| AlGaN/GaN -Band 5-W MMIC Amplifier AM Darwish, K Boutros, B Luo, BD Huebschman, E Viveiros, HA Hung IEEE Transactions on Microwave Theory and Techniques 54 (12), 4456-4463, 2006 | 81 | 2006 |
| An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz R Li, SJ Cai, L Wong, Y Chen, KL Wang, RP Smith, SC Martin, KS Boutros, ... IEEE Electron Device Letters 20 (7), 323-325, 1999 | 78 | 1999 |
| Growth and characterization of In-based nitride compounds SM Bedair, FG McIntosh, JC Roberts, EL Piner, KS Boutros, NA El-Masry Journal of crystal growth 178 (1-2), 32-44, 1997 | 78 | 1997 |
| Facet roughness analysis for InGaN/GaN lasers with cleaved facets DA Stocker, EF Schubert, W Grieshaber, KS Boutros, JM Redwing Applied Physics Letters 73 (14), 1925-1927, 1998 | 74 | 1998 |
| GaN power electronics for automotive application KS Boutros, R Chu, B Hughes 2012 IEEE Energytech, 1-4, 2012 | 71 | 2012 |
| Impact ionization in high performance AlGaN/GaN HEMTs B Brar, K Boutros, RE DeWarnes, V Tilak, R Shealy, L Eastman Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 487-491, 2002 | 69 | 2002 |
| Normally-off 5A/1100V GaN-on-silicon device for high voltage applications KS Boutros, S Burnham, D Wong, K Shinohara, B Hughes, D Zehnder, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-3, 2009 | 65 | 2009 |
