| The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ... Semiconductor Science and Technology 29 (11), 115012, 2014 | 82 | 2014 |
| Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates X Li, K Geens, W Guo, S You, M Zhao, D Fahle, V Odnoblyudov, ... IEEE Electron Device Letters 40 (9), 1499-1502, 2019 | 76 | 2019 |
| Effect of different carbon doping techniques on the dynamic properties of GaN-on-Si buffers H Yacoub, C Mauder, S Leone, M Eickelkamp, D Fahle, M Heuken, ... IEEE Transactions on Electron Devices 64 (3), 991-997, 2017 | 43 | 2017 |
| Effect of carbon doping level on static and dynamic properties of AlGaN/GaN heterostructures grown on silicon H Yacoub, T Zweipfennig, G Lükens, H Behmenburg, D Fahle, ... IEEE Transactions on Electron Devices 65 (8), 3192-3198, 2018 | 38 | 2018 |
| Analysis of an AlGaN/AlN super-lattice buffer concept for 650-V low-dispersion and high-reliability GaN HEMTs L Heuken, M Kortemeyer, A Ottaviani, M Schröder, M Alomari, D Fahle, ... IEEE Transactions on Electron Devices 67 (3), 1113-1119, 2020 | 35 | 2020 |
| Electrical properties of quasi-vertical Schottky diodes W Witte, D Fahle, H Koch, M Heuken, H Kalisch, A Vescan Semiconductor Science and Technology 27 (8), 085015, 2012 | 33 | 2012 |
| Integration of 650 V GaN power ICs on 200 mm engineered substrates X Li, K Geens, D Wellekens, M Zhao, A Magnani, N Amirifar, B Bakeroot, ... IEEE Transactions on Semiconductor Manufacturing 33 (4), 534-538, 2020 | 25 | 2020 |
| Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors H Yacoub, D Fahle, M Eickelkamp, A Wille, C Mauder, M Heuken, ... Journal of Applied Physics 119 (13), 2016 | 24 | 2016 |
| Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures S Besendörfer, E Meissner, T Zweipfennig, H Yacoub, D Fahle, ... AIP Advances 10 (4), 2020 | 22 | 2020 |
| 45‐3: Invited Paper: Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing A Beckers, D Fahle, C Mauder, T Kruecken, AR Boyd, M Heuken SID Symposium Digest of Technical Papers 49 (1), 601-603, 2018 | 20 | 2018 |
| Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application A Vohra, K Geens, M Zhao, O Syshchyk, H Hahn, D Fahle, B Bakeroot, ... Applied Physics Letters 120 (26), 2022 | 19 | 2022 |
| Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates C Mauder, B Reuters, KR Wang, D Fahle, A Trampert, MV Rzheutskii, ... Journal of crystal growth 315 (1), 246-249, 2011 | 17 | 2011 |
| In situ SiN passivation of AlInN/GaN heterostructures by MOVPE H Behmenburg, LR Khoshroo, C Mauder, N Ketteniss, KH Lee, ... physica status solidi c 7 (7‐8), 2104-2106, 2010 | 17 | 2010 |
| Vertical GaN devices: Process and reliability S You, K Geens, M Borga, H Liang, H Hahn, D Fahle, M Heuken, ... Microelectronics Reliability 126, 114218, 2021 | 14 | 2021 |
| Physical modeling of charge trapping effects in GaN/Si devices and incorporation in the ASM-HEMT model M Pradhan, M Alomari, M Moser, D Fahle, H Hahn, M Heuken, ... IEEE Journal of the Electron Devices Society 9, 748-755, 2021 | 14 | 2021 |
| 650 V p-GaN gate power HEMTs on 200 mm engineered substrates K Geens, X Li, M Zhao, W Guo, D Wellekens, N Posthuma, D Fahle, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 14 | 2019 |
| The effect of AlN nucleation growth conditions on the inversion channel formation at the AlN/silicon interface H Yacoub, M Eickelkamp, D Fahle, C Mauder, A Alam, M Heuken, ... 2015 73rd Annual Device Research Conference (DRC), 175-176, 2015 | 8 | 2015 |
| In-situ decomposition and etching of AlN and GaN in the presence of HCl D Fahle, T Kruecken, M Dauelsberg, H Kalisch, M Heuken, A Vescan Journal of crystal growth 393, 89-92, 2014 | 8 | 2014 |
| On the anisotropic wafer curvature of GaN-based heterostructures on Si (1 1 0) substrates grown by MOVPE C Mauder, ID Booker, D Fahle, H Boukiour, H Behmenburg, LR Khoshroo, ... Journal of crystal growth 315 (1), 220-223, 2011 | 8 | 2011 |
| Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si (111) substrate M Eickelkamp, D Fahle, J Lindner, M Heuken, C Lautensack, H Kalisch, ... physica status solidi (a) 207 (6), 1342-1344, 2010 | 8 | 2010 |
