The fabrication of vertical light-emitting diodes using chemical lift-off process JS Ha, SW Lee, HJ Lee, HJ Lee, SH Lee, H Goto, T Kato, K Fujii, MW Cho, ... IEEE Photonics Technology Letters 20 (3), 175-177, 2008 | 140 | 2008 |
Ordered arrays of ZnO nanorods grown on periodically polarity-inverted surfaces SH Lee, T Minegishi, JS Park, SH Park, JS Ha, HJ Lee, HJ Lee, S Ahn, ... Nano letters 8 (8), 2419-2422, 2008 | 83 | 2008 |
Lattice strain in bulk GaN epilayers grown on CrN/sapphire template SW Lee, JS Ha, HJ Lee, HJ Lee, H Goto, T Hanada, T Goto, K Fujii, ... Applied Physics Letters 94 (8), 2009 | 54 | 2009 |
Effect of stresses on the evolution of annealing textures in Cu and Al interconnects DN Lee, HJ Lee Journal of electronic materials 32, 1012-1022, 2003 | 50 | 2003 |
Improvement of light extraction efficiency and reduction of leakage current in GaN-based LED via V-pit formation K Koike, S Lee, SR Cho, J Park, H Lee, JS Ha, SK Hong, HY Lee, ... IEEE Photonics Technology Letters 24 (6), 449-451, 2011 | 37 | 2011 |
Self-separated freestanding GaN using a NH4Cl interlayer HJ Lee, SW Lee, H Goto, SH Lee, HJ Lee, JS Ha, T Goto, MW Cho, T Yao, ... Applied Physics Letters 91 (19), 2007 | 37 | 2007 |
Electron backscattered diffraction analysis of copper damascene interconnect for ultralarge-scale integration HJ Lee, DI Kim, JH Ahn, DN Lee Thin Solid Films 474 (1-2), 250-254, 2005 | 32 | 2005 |
Improvement of efficiency in graphene/gallium nitride nanowire on Silicon photoelectrode for overall water splitting H Bae, H Rho, JW Min, YT Lee, SH Lee, K Fujii, HJ Lee, JS Ha Applied Surface Science 422, 354-358, 2017 | 31 | 2017 |
Chemical lift‐off of GaN epitaxial films grown on c‐sapphire substrates with CrN buffer layers H Goto, SW Lee, HJ Lee, HJ Lee, JS Ha, MW Cho, T Yao physica status solidi c 5 (6), 1659-1661, 2008 | 31 | 2008 |
Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands JS Ha, HJ Lee, SW Lee, HJ Lee, SH Lee, H Goto, MW Cho, T Yao, ... Applied Physics Letters 92 (9), 2008 | 31 | 2008 |
Superconformal nickel deposition in through silicon vias: experiment and prediction TM Braun, SH Kim, HJ Lee, TP Moffat, D Josell Journal of the Electrochemical Society 165 (7), D291, 2018 | 29 | 2018 |
Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process K Fujii, S Lee, JS Ha, HJ Lee, HJ Lee, SH Lee, T Kato, MW Cho, T Yao Applied Physics Letters 94 (24), 2009 | 29 | 2009 |
Void-free metal interconnection structure and method of forming the same JH Ahn, HJ Lee, KT Lee, KW Lee, SG Lee, B Suh US Patent 6,953,745, 2005 | 26 | 2005 |
Selective copper alloy interconnections in semiconductor devices and methods of forming the same HJ Lee, S Lee, B Suh, H Shin, N Lee, KW Lee, S Jeong, JH Ahn, SG Lee US Patent App. 11/389,868, 2006 | 23 | 2006 |
Bottom-up Cu filling of annular through silicon vias: Microstructure and texture SH Kim, HJ Lee, D Josell, TP Moffat Electrochimica Acta 335, 135612, 2020 | 22 | 2020 |
Growth of Polarity-Controlled ZnO Films on (0001) Al2O3 JS Park, JH Chang, T Minegishi, HJ Lee, SH Park, IH Im, T Hanada, ... Journal of electronic materials 37, 736-742, 2008 | 22 | 2008 |
Annealing textures of copper damascene interconnects for ultra-large-scale integration HJ Lee, HN Han, DN Lee Journal of electronic materials 34, 1493-1499, 2005 | 21 | 2005 |
Working mechanism of iodide ions and its application to Cu microstructure control in through silicon via filling MJ Sung, SH Kim, HJ Lee, T Lim, JJ Kim Electrochimica Acta 295, 224-229, 2019 | 20 | 2019 |
Inward diffusion of al and ti3al compound formation in the ti–6al–4v alloy during high temperature gas nitriding H Lee, H Kang, J Kim, HK Shin, J Lee, SH Huh, J Sung, HJ Lee Surface and Coatings Technology 240, 221-225, 2014 | 20 | 2014 |
In situ observation of the grain growth of the copper electrodeposits for ultralarge scale integration HJ Lee, HN Han, DH Kim, U Lee, KH Oh, PR Cha Applied physics letters 89 (16), 2006 | 20 | 2006 |