| IEEE Photonics Technol. Lett SM Kim, Y Wang, M Keever, JS Harris | 278 | 2004 |
| High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well K Mayes, A Yasan, R McClintock, D Shiell, SR Darvish, P Kung, ... Applied physics letters 84 (7), 1046-1048, 2004 | 206 | 2004 |
| 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes A Yasan, R McClintock, K Mayes, D Shiell, L Gautero, SR Darvish, P Kung, ... Applied Physics Letters 83 (23), 4701-4703, 2003 | 186 | 2003 |
| High quantum efficiency AlGaN solar-blind p-i-n photodiodes R McClintock, A Yasan, K Mayes, D Shiell, SR Darvish, P Kung, ... Applied physics letters 84 (8), 1248-1250, 2004 | 166 | 2004 |
| Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm A Yasan, R McClintock, K Mayes, SR Darvish, P Kung, M Razeghi Applied physics letters 81 (5), 801-802, 2002 | 125 | 2002 |
| Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes R McClintock, JL Pau, K Minder, C Bayram, P Kung, M Razeghi Applied Physics Letters 90 (14), 141112, 2007 | 121 | 2007 |
| solar-blind focal plane arrays based on R McClintock, K Mayes, A Yasan, D Shiell, P Kung, M Razeghi Applied Physics Letters 86 (1), 011117, 2005 | 121 | 2005 |
| AlxGa1− xN for solar-blind UV detectors P Sandvik, K Mi, F Shahedipour, R McClintock, A Yasan, P Kung, ... Journal of crystal growth 231 (3), 366-370, 2001 | 120 | 2001 |
| Avalanche multiplication in AlGaN based solar-blind photodetectors R McClintock, A Yasan, K Minder, P Kung, M Razeghi Applied Physics Letters 87 (24), 241123, 2005 | 111 | 2005 |
| AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89% E Cicek, R McClintock, CY Cho, B Rahnema, M Razeghi Applied Physics Letters 103 (19), 191108, 2013 | 94 | 2013 |
| Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire A Yasan, R McClintock, K Mayes, SR Darvish, H Zhang, P Kung, ... Applied physics letters 81 (12), 2151-2153, 2002 | 86 | 2002 |
| Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111) CY Cho, Y Zhang, E Cicek, B Rahnema, Y Bai, R McClintock, M Razeghi Applied Physics Letters 102 (21), 211110, 2013 | 77 | 2013 |
| Back-illuminated separate absorption and multiplication GaN avalanche photodiodes JL Pau, C Bayram, R McClintock, M Razeghi, D Silversmith Applied Physics Letters 92 (10), 101120, 2008 | 72 | 2008 |
| Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices M Razeghi, A Haddadi, AM Hoang, EK Huang, G Chen, S Bogdanov, ... Infrared Physics & Technology 59, 41-52, 2013 | 69 | 2013 |
| Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes A Yasan, R McClintock, K Mayes, DH Kim, P Kung, M Razeghi Applied physics letters 83 (20), 4083-4085, 2003 | 68 | 2003 |
| Delta-doping optimization for high quality -type GaN C Bayram, JL Pau, R McClintock, M Razeghi Journal of Applied Physics 104 (8), 083512, 2008 | 64 | 2008 |
| Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates E Cicek, Z Vashaei, R McClintock, C Bayram, M Razeghi Applied Physics Letters 96 (26), 261107, 2010 | 61 | 2010 |
| Geiger-mode operation of back-illuminated GaN avalanche photodiodes JL Pau, R McClintock, K Minder, C Bayram, P Kung, M Razeghi, E Muņoz, ... Applied Physics Letters 91 (4), 041104, 2007 | 59 | 2007 |
| High power frequency comb based on mid-infrared quantum cascade laser at λ ∼ 9 μm QY Lu, M Razeghi, S Slivken, N Bandyopadhyay, Y Bai, WJ Zhou, ... Applied Physics Letters 106 (5), 051105, 2015 | 53 | 2015 |
| Performance enhancement of GaN ultraviolet avalanche photodiodes with -type -doping C Bayram, JL Pau, R McClintock, M Razeghi Applied Physics Letters 92 (24), 241103, 2008 | 52 | 2008 |
Manijeh RazeghiNorthwestern UniversityVerified email at eecs.northwestern.edu
