| Dark current suppression in type II superlattice long wavelength infrared photodiodes with M-structure barrier BM Nguyen, D Hoffman, PY Delaunay, M Razeghi Applied Physics Letters 91 (16), 163511, 2007 | 262 | 2007 |
| Very high quantum efficiency in type-II superlattice photodiode with cutoff of BM Nguyen, D Hoffman, Y Wei, PY Delaunay, A Hood, M Razeghi Applied Physics Letters 90 (23), 231108, 2007 | 151 | 2007 |
| High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices SA Pour, EK Huang, G Chen, A Haddadi, BM Nguyen, M Razeghi Applied Physics Letters 98 (14), 143501, 2011 | 128 | 2011 |
| Near bulk-limited of long-wavelength infrared type-II superlattice photodiodes with polyimide surface passivation A Hood, PY Delaunay, D Hoffman, BM Nguyen, Y Wei, M Razeghi, ... Applied physics letters 90 (23), 233513, 2007 | 123 | 2007 |
| Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection BM Nguyen, S Bogdanov, SA Pour, M Razeghi Applied Physics Letters 95 (18), 183502, 2009 | 119 | 2009 |
| Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K BM Nguyen, D Hoffman, EK Huang, PY Delaunay, M Razeghi Applied Physics Letters 93 (12), 123502, 2008 | 106 | 2008 |
| High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices P Manurkar, S Ramezani-Darvish, BM Nguyen, M Razeghi, J Hubbs Applied Physics Letters 97 (19), 193505, 2010 | 102 | 2010 |
| Passivation of type-II double heterostructure PY Delaunay, A Hood, BM Nguyen, D Hoffman, Y Wei, M Razeghi Applied Physics Letters 91 (9), 091112, 2007 | 98 | 2007 |
| Edge transport in the trivial phase of InAs/GaSb F Nichele, HJ Suominen, M Kjaergaard, CM Marcus, E Sajadi, JA Folk, ... New Journal of Physics 18 (8), 083005, 2016 | 94 | 2016 |
| Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs–GaSb superlattices PY Delaunay, BM Nguyen, D Hoffman, EK Huang, M Razeghi IEEE Journal of Quantum Electronics 45 (2), 157-162, 2009 | 94 | 2009 |
| Band edge tunability of -structure for heterojunction design in Sb based type II superlattice photodiodes BM Nguyen, D Hoffman, PY Delaunay, EKW Huang, M Razeghi, ... Applied Physics Letters 93 (16), 163502, 2008 | 89 | 2008 |
| Electric and magnetic tuning between the trivial and topological phases in InAs/GaSb double quantum wells F Qu, AJA Beukman, S Nadj-Perge, M Wimmer, BM Nguyen, W Yi, ... Physical review letters 115 (3), 036803, 2015 | 87 | 2015 |
| Advances in mid-infrared detection and imaging: a key issues review M Razeghi, BM Nguyen Reports on Progress in Physics 77 (8), 082401, 2014 | 87 | 2014 |
| Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes BM Nguyen, M Razeghi, V Nathan, GJ Brown Quantum Sensing and Nanophotonic Devices IV 6479, 64790S, 2007 | 85 | 2007 |
| Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes EK Huang, D Hoffman, BM Nguyen, PY Delaunay, M Razeghi Applied Physics Letters 94 (5), 053506, 2009 | 82 | 2009 |
| High differential resistance type-II superlattice photodiodes for the long-wavelength infrared A Hood, D Hoffman, BM Nguyen, PY Delaunay, E Michel, M Razeghi Applied Physics Letters 89 (9), 093506, 2006 | 73 | 2006 |
| Beryllium compensation doping of infrared superlattice photodiodes D Hoffman, BM Nguyen, PY Delaunay, A Hood, M Razeghi, J Pellegrino Applied Physics Letters 91 (14), 143507, 2007 | 72 | 2007 |
| Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate BM Nguyen, D Hoffman, EK Huang, S Bogdanov, PY Delaunay, ... Applied Physics Letters 94 (22), 223506, 2009 | 70 | 2009 |
| Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer BM Nguyen, G Chen, MA Hoang, M Razeghi IEEE Journal of Quantum Electronics 47 (5), 686-690, 2011 | 66 | 2011 |
| Tailoring lithiation behavior by interface and bandgap engineering at the nanoscale Y Liu, XH Liu, BM Nguyen, J Yoo, JP Sullivan, ST Picraux, JY Huang, ... Nano letters 13 (10), 4876-4883, 2013 | 57 | 2013 |
Manijeh RazeghiNorthwestern UniversityVerified email at eecs.northwestern.edu
