Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ... Microelectronic Engineering 88 (4), 342-346, 2011 | 156 | 2011 |
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon (111) substrates with high electron mobility K Cheng, H Liang, M Van Hove, K Geens, B De Jaeger, P Srivastava, ... Applied Physics Express 5 (1), 011002, 2011 | 141 | 2011 |
Site selective integration of III–V materials on Si for nanoscale logic and photonic devices M Paladugu, C Merckling, R Loo, O Richard, H Bender, J Dekoster, ... Crystal Growth & Design 12 (10), 4696-4702, 2012 | 131 | 2012 |
Selective area growth of high quality InP on Si (001) substrates G Wang, MR Leys, R Loo, O Richard, H Bender, N Waldron, G Brammertz, ... Applied Physics Letters 97 (12), 2010 | 94 | 2010 |
Spin density wave instability for chromium in Fe/Cr (100) multilayers J Meersschaut, J Dekoster, R Schad, P Beliën, M Rots Physical review letters 75 (8), 1638, 1995 | 87 | 1995 |
Polytypic InP nanolaser monolithically integrated on (001) silicon Z Wang, B Tian, M Paladugu, M Pantouvaki, N Le Thomas, C Merckling, ... Nano letters 13 (11), 5063-5069, 2013 | 82 | 2013 |
Concentration-controlled phase selection of silicide formation during reactive deposition A Vantomme, S Degroote, J Dekoster, G Langouche, R Pretorius Applied physics letters 74 (21), 3137-3139, 1999 | 79 | 1999 |
Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing YC Chang, C Merckling, J Penaud, CY Lu, WE Wang, J Dekoster, ... Applied physics letters 97 (11), 2010 | 73 | 2010 |
Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate … LK Chu, C Merckling, A Alian, J Dekoster, J Kwo, M Hong, M Caymax, ... Applied Physics Letters 99 (4), 2011 | 70 | 2011 |
Coarsening of antiferromagnetic domains in multilayers: the key role of magnetocrystalline anisotropy DL Nagy, L Bottyan, B Croonenborghs, L Deák, B Degroote, J Dekoster, ... Physical review letters 88 (15), 157202, 2002 | 60 | 2002 |
GaSb molecular beam epitaxial growth on p-InP (001) and passivation with in situ deposited Al2O3 gate oxide C Merckling, X Sun, A Alian, G Brammertz, VV Afanas’ev, TY Hoffmann, ... Journal of Applied Physics 109 (7), 2011 | 56 | 2011 |
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Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method S Gupta, B Vincent, B Yang, D Lin, F Gencarelli, JYJ Lin, R Chen, ... 2012 International Electron Devices Meeting, 16.2. 1-16.2. 4, 2012 | 51 | 2012 |
Selective area growth of InP in shallow-trench-isolated structures on off-axis Si (001) substrates G Wang, MR Leys, ND Nguyen, R Loo, G Brammertz, O Richard, ... Journal of the Electrochemical Society 157 (11), H1023, 2010 | 48 | 2010 |
Ge1− xSnx stressors for strained-Ge CMOS S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ... Solid-State Electronics 60 (1), 53-57, 2011 | 46 | 2011 |
Epitaxial growth of bcc Co/Fe superlattices J Dekoster, E Jedryka, C Meny, G Langouche Journal of magnetism and magnetic materials 121 (1-3), 69-72, 1993 | 44 | 1993 |
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GeSn channel nMOSFETs: Material potential and technological outlook S Gupta, B Vincent, DHC Lin, M Gunji, A Firrincieli, F Gencarelli, ... 2012 Symposium on VLSI Technology (VLSIT), 95-96, 2012 | 42 | 2012 |
Formation of Ni (Ge1− xSnx) layers with solid-phase reaction in Ni/Ge1− xSnx/Ge systems T Nishimura, O Nakatsuka, Y Shimura, S Takeuchi, B Vincent, ... Solid-State Electronics 60 (1), 46-52, 2011 | 42 | 2011 |
New phases and chemical short range order in co-deposited CoFe thin films with bcc structure: an NMR study M Wojcik, JP Jay, P Panissod, E Jedryka, J Dekoster, G Langouche Zeitschrift für Physik B Condensed Matter 103, 5-12, 1997 | 42 | 1997 |