Methods for forming low temperature semiconductor layers and related semiconductor device structures P Raisanen, MB Mousa, PF Hsu US Patent 10,886,123, 2021 | 309 | 2021 |
Method of forming an electrode on a substrate and a semiconductor device structure including an electrode MB Mousa, PF Hsu, W Johnson, P Raisanen US Patent 10,847,371, 2020 | 308 | 2020 |
Method of forming a doped metal carbide film on a substrate and related semiconductor device structures D Li, PF Hsu, P Raisanen, MB Mousa, W Johnson, X Chen US Patent 11,056,567, 2021 | 177 | 2021 |
Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure MBM Mousa, CJ Oldham, JS Jur, GN Parsons Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (1 …, 2012 | 75 | 2012 |
Atmospheric Pressure Atomic Layer Deposition of Al2O3 Using Trimethyl Aluminum and Ozone MBM Mousa, CJ Oldham, GN Parsons Langmuir 30 (13), 3741-3748, 2014 | 54 | 2014 |
Modeling and experimental demonstration of high-throughput flow-through spatial atomic layer deposition of Al2O3 coatings on textiles at atmospheric pressure MBM Mousa, JS Ovental, AH Brozena, CJ Oldham, GN Parsons Journal of Vacuum Science & Technology A 36 (3), 2018 | 25 | 2018 |
Atmospheric pressure synthesis of photoluminescent hybrid materials by sequential organometallic vapor infiltration into polyethylene terephthalate fibers HI Akyildiz, MBM Mousa, JS Jur Journal of Applied Physics 117 (4), 2015 | 16 | 2015 |
Precise nanoscale surface modification and coating of macroscale objects: open-environment in loco atomic layer deposition on an automobile MBM Mousa, CJ Oldham, GN Parsons ACS applied materials & interfaces 7 (35), 19523-19529, 2015 | 14 | 2015 |
Thermal atomic layer deposition of Sn metal using SnCl4 and a vapor phase silyl dihydropyrazine reducing agent EC Stevens, MBM Mousa, GN Parsons Journal of Vacuum Science & Technology A 36 (6), 2018 | 12 | 2018 |
Buried power rail metal exploration towards the 1 nm node A Gupta, D Radisic, JW Maes, OV Pedreira, JP Soulié, N Jourdan, ... 2021 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2021 | 9 | 2021 |
Hydrodynamics of a novel design circulating fluidized bed steam reformer operating in the dense suspension upflow regime MBM Mousa, SEK Fateen, EA Ibrahim International Scholarly Research Notices 2014, 2014 | 4 | 2014 |
Barrierless ALD Molybdenum for Buried Power Rail and Via-to-Buried Power Rail metallization A Gupta, JW Maes, N Jourdan, C Zhu, S Datta, OV Pedreira, QT Le, ... 2022 IEEE International Interconnect Technology Conference (IITC), 58-60, 2022 | 2 | 2022 |
Hydrodynamic characteristics of a novel circulating fluidized bed steam reformer operating in the fast fluidization regime MBM Mousa, SEK Fateen, EA Ibrahim International Journal of Chemical Reactor Engineering 9 (1), 2011 | 2 | 2011 |
Selective ALD Mo Deposition in 10nm Contacts MH van der Veen, JW Maes, OV Pedreira, C Zhu, D Tierno, S Datta, ... 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE …, 2023 | 1 | 2023 |
Reactor systems and methods for cleaning reactor systems A Mishra, JL Winkler, MB Mousa, M Muhammad, P Ma, H M'saad, YS Kuo, ... US Patent App. 17/729,645, 2022 | 1 | 2022 |
ALD Mo for Advanced MOL Local Interconnects M Hosseini, D Tierno, JW Maes, C Zhu, S Datta, Y Byun, M Mousa, ... 2022 IEEE International Interconnect Technology Conference (IITC), 145-147, 2022 | 1 | 2022 |
High Throughput Atomic Layer Deposition Processes: High Pressure Operations, New Reactor Designs, and Novel Metal Processing MM Mousa Ph.D. Thesis, 2015 | 1 | 2015 |
Method of forming structure including a doped adhesion film MB Mousa, J Kim, LEE Jaebeom, CE Nanayakkara, P Ma, CD Wang, ... US Patent App. 18/141,694, 2023 | | 2023 |
Methods and systems for filling gap features on substrate surfaces Y Cabrera, YC Byun, AV Ravichandran, S Luiso, SH Yu, MB Mousa US Patent App. 18/119,884, 2023 | | 2023 |
Systems and methods for cleaning and treating a surface of a substrate YC Byun, MB Mousa, D Li, AV Ravichandran, Y Cabrera, S Luiso US Patent App. 18/147,038, 2023 | | 2023 |