Manijeh Razeghi
Manijeh Razeghi
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Semiconductor ultraviolet detectors
M Razeghi, A Rogalski
Journal of Applied Physics 79 (10), 7433-7473, 1996
Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal …
KH Goetz, D Bimberg, H Jürgensen, J Selders, AV Solomonov, ...
Journal of Applied Physics 54 (8), 4543-4552, 1983
Room temperature quantum cascade lasers with 27% wall plug efficiency
Y Bai, N Bandyopadhyay, S Tsao, S Slivken, M Razeghi
Applied Physics Letters 98 (18), 181102, 2011
Narrow-gap semiconductor photodiodes
A Rogalski, K Adamiec, J Rutkowski
SPIE Press, 2000
IEEE Photonics Technol. Lett
SM Kim, Y Wang, M Keever, JS Harris
Dark current suppression in type II superlattice long wavelength infrared photodiodes with M-structure barrier
BM Nguyen, D Hoffman, PY Delaunay, M Razeghi
Applied Physics Letters 91 (16), 163511, 2007
Short-wavelength solar-blind detectors-status, prospects, and markets
M Razeghi
Proceedings of the IEEE 90 (6), 1006-1014, 2002
AlGaN ultraviolet photoconductors grown on sapphire
D Walker, X Zhang, P Kung, A Saxler, S Javadpour, J Xu, M Razeghi
Applied Physics Letters 68 (15), 2100-2101, 1996
High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates
P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi
Applied physics letters 66 (22), 2958-2960, 1995
High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN
D Walker, E Monroy, P Kung, J Wu, M Hamilton, FJ Sanchez, J Diaz, ...
Applied physics letters 74 (5), 762-764, 1999
Fundamentals of solid state engineering
M Razeghi
Springer, 2009
Electroluminescence at from a heterojunction light emitting diode
DJ Rogers, F Hosseini Teherani, A Yasan, K Minder, P Kung, M Razeghi
Applied physics letters 88 (14), 141918, 2006
The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications
M Razeghi
CRC Press, 1995
Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency
Y Bai, S Slivken, SR Darvish, M Razeghi
Applied Physics Letters 93 (2), 021103, 2008
High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
K Mayes, A Yasan, R McClintock, D Shiell, SR Darvish, P Kung, ...
Applied physics letters 84 (7), 1046-1048, 2004
Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering
Y Wei, M Razeghi
Physical Review B 69 (8), 085316, 2004
High-quality visible-blind AlGaN p-i-n photodiodes
E Monroy, M Hamilton, D Walker, P Kung, FJ Sánchez, M Razeghi
Applied physics letters 74 (8), 1171-1173, 1999
Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector
S Kim, H Mohseni, M Erdtmann, E Michel, C Jelen, M Razeghi
Applied Physics Letters 73 (7), 963-965, 1998
Solar-blind AlGaN photodiodes with very low cutoff wavelength
D Walker, V Kumar, K Mi, P Sandvik, P Kung, XH Zhang, M Razeghi
Applied Physics Letters 76 (4), 403-405, 2000
High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers
A Evans, JS Yu, J David, L Doris, K Mi, S Slivken, M Razeghi
Applied Physics Letters 84 (3), 314-316, 2004
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