| Semiconductor ultraviolet detectors M Razeghi, A Rogalski Journal of Applied Physics 79 (10), 7433-7473, 1996 | 1570 | 1996 |
| Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal … KH Goetz, D Bimberg, H Jürgensen, J Selders, AV Solomonov, ... Journal of Applied Physics 54 (8), 4543-4552, 1983 | 400 | 1983 |
| Room temperature quantum cascade lasers with 27% wall plug efficiency Y Bai, N Bandyopadhyay, S Tsao, S Slivken, M Razeghi Applied Physics Letters 98 (18), 181102, 2011 | 391 | 2011 |
| Narrow-gap semiconductor photodiodes A Rogalski, K Adamiec, J Rutkowski SPIE Press, 2000 | 287 | 2000 |
| IEEE Photonics Technol. Lett SM Kim, Y Wang, M Keever, JS Harris | 278 | 2004 |
| Dark current suppression in type II superlattice long wavelength infrared photodiodes with M-structure barrier BM Nguyen, D Hoffman, PY Delaunay, M Razeghi Applied Physics Letters 91 (16), 163511, 2007 | 259 | 2007 |
| Short-wavelength solar-blind detectors-status, prospects, and markets M Razeghi Proceedings of the IEEE 90 (6), 1006-1014, 2002 | 252 | 2002 |
| AlGaN ultraviolet photoconductors grown on sapphire D Walker, X Zhang, P Kung, A Saxler, S Javadpour, J Xu, M Razeghi Applied Physics Letters 68 (15), 2100-2101, 1996 | 244 | 1996 |
| High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi Applied physics letters 66 (22), 2958-2960, 1995 | 237 | 1995 |
| High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN D Walker, E Monroy, P Kung, J Wu, M Hamilton, FJ Sanchez, J Diaz, ... Applied physics letters 74 (5), 762-764, 1999 | 220 | 1999 |
| Fundamentals of solid state engineering M Razeghi Springer, 2009 | 215 | 2009 |
| Electroluminescence at from a heterojunction light emitting diode DJ Rogers, F Hosseini Teherani, A Yasan, K Minder, P Kung, M Razeghi Applied physics letters 88 (14), 141918, 2006 | 213 | 2006 |
| The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications M Razeghi CRC Press, 1995 | 208 | 1995 |
| Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency Y Bai, S Slivken, SR Darvish, M Razeghi Applied Physics Letters 93 (2), 021103, 2008 | 206 | 2008 |
| High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well K Mayes, A Yasan, R McClintock, D Shiell, SR Darvish, P Kung, ... Applied physics letters 84 (7), 1046-1048, 2004 | 206 | 2004 |
| Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering Y Wei, M Razeghi Physical Review B 69 (8), 085316, 2004 | 195 | 2004 |
| High-quality visible-blind AlGaN p-i-n photodiodes E Monroy, M Hamilton, D Walker, P Kung, FJ Sánchez, M Razeghi Applied physics letters 74 (8), 1171-1173, 1999 | 195 | 1999 |
| Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector S Kim, H Mohseni, M Erdtmann, E Michel, C Jelen, M Razeghi Applied Physics Letters 73 (7), 963-965, 1998 | 194 | 1998 |
| Solar-blind AlGaN photodiodes with very low cutoff wavelength D Walker, V Kumar, K Mi, P Sandvik, P Kung, XH Zhang, M Razeghi Applied Physics Letters 76 (4), 403-405, 2000 | 193 | 2000 |
| High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers A Evans, JS Yu, J David, L Doris, K Mi, S Slivken, M Razeghi Applied Physics Letters 84 (3), 314-316, 2004 | 190 | 2004 |
