| Normally-off C–H diamond MOSFETs with partial C–O channel achieving 2-kV breakdown voltage Y Kitabayashi, T Kudo, H Tsuboi, T Yamada, D Xu, M Shibata, ... IEEE Electron Device Letters 38 (3), 363-366, 2017 | 185 | 2017 |
| Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review N Islam, MFP Mohamed, MFAJ Khan, S Falina, H Kawarada, M Syamsul Crystals 12 (11), 1581, 2022 | 73 | 2022 |
| Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review M Haziq, S Falina, AA Manaf, H Kawarada, M Syamsul Micromachines 13 (12), 2133, 2022 | 49 | 2022 |
| High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor M Syamsul, Y Kitabayashi, D Matsumura, T Saito, Y Shintani, H Kawarada Applied Physics Letters 109 (20), 2016 | 35 | 2016 |
| Ten years progress of electrical detection of heavy metal ions (hmis) using various field-effect transistor (fet) nanosensors: A review S Falina, M Syamsul, NA Rhaffor, S Sal Hamid, KA Mohamed Zain, ... Biosensors 11 (12), 478, 2021 | 30 | 2021 |
| Heteroepitaxial diamond field-effect transistor for high voltage applications M Syamsul, N Oi, S Okubo, T Kageura, H Kawarada IEEE Electron Device Letters 39 (1), 51-54, 2017 | 26 | 2017 |
| High Voltage Stress Induced in Transparent Polycrystalline Diamond Field-Effect Transistor and Enhanced Endurance Using Thick Al2O3 Passivation Layer M Syamsul, Y Kitabayashi, T Kudo, D Matsumura, H Kawarada IEEE Electron Device Letters 38 (5), 607-610, 2017 | 24 | 2017 |
| Role of carboxyl and amine termination on a boron-doped diamond solution gate field effect transistor (SGFET) for pH sensing S Falina, S Kawai, N Oi, H Yamano, T Kageura, E Suaebah, M Inaba, ... Sensors 18 (7), 2178, 2018 | 16 | 2018 |
| Carboxyl-functionalized graphene SGFET: pH sensing mechanism and reliability of anodization S Falina, M Syamsul, Y Iyama, M Hasegawa, Y Koga, H Kawarada Diamond and Related Materials 91, 15-21, 2019 | 14 | 2019 |
| Status and prospects of heterojunction-based HEMT for next-generation biosensors N Fauzi, RI Mohd Asri, MF Mohamed Omar, AA Manaf, H Kawarada, ... Micromachines 14 (2), 325, 2023 | 9 | 2023 |
| Two-dimensional non-carbon materials-based electrochemical printed sensors: An updated review S Falina, K Anuar, SA Shafiee, JC Juan, AA Manaf, H Kawarada, ... Sensors 22 (23), 9358, 2022 | 9 | 2022 |
| Two-step GaN layer growth for high-voltage lateral AlGaN/GaN HEMT Y Yusuf, MEA Samsudin, MIM Taib, MA Ahmad, MFP Mohamed, ... Crystals 13 (1), 90, 2023 | 7 | 2023 |
| Over 59 mV pH−1 Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron‐Doped Diamond Solution‐Gate Field‐Effect … YH Chang, Y Iyama, K Tadenuma, S Kawaguchi, T Takarada, S Falina, ... physica status solidi (a) 218 (5), 2000278, 2021 | 7 | 2021 |
| High temperature performance of enhanced endurance hydrogen terminated transparent polycrystalline diamond FET S Falina, H Kawarada, A Abd Manaf, M Syamsul IEEE Electron Device Letters 43 (7), 1101-1104, 2022 | 4 | 2022 |
| New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications MF Packeer Mohamed, MF Mohamed Omar, MF Akbar Jalaludin Khan, ... Micromachines 12 (12), 1497, 2021 | 3 | 2021 |
| Feasibility Study of TiOx Encapsulation of Diamond Solution‐Gate Field‐Effect Transistor Metal Contacts for Miniature Biosensor Applications S Falina, K Tanabe, Y Iyama, K Tadenuma, T Bi, YH Chang, AA Manaf, ... physica status solidi (a) 217 (23), 2000634, 2020 | 2 | 2020 |
| Development of carbon nanotube based biosensor fabrication for medical diagnostics application N Syamsul, MNM Nuzaihan, U Hashim 2010 International Conference on Enabling Science and Nanotechnology …, 2010 | 2 | 2010 |
| Radio frequency magnetron sputtering growth of Ni-doped ZnO thin films with nanocolumnar structures M Mazwan, SS Ng, MSNS Baharin, MZ Pakhuruddin, ASA Bakar, ... Journal of Crystal Growth 644, 127835, 2024 | 1 | 2024 |
| Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: a simulation study M Haziq, H Kawarada, S Falina, M Syamsul Results in Physics 64, 107952, 2024 | 1 | 2024 |
| Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT MHA Hamid, RI Mohd Asri, M Nuzaihan, M Inaba, Z Hassan, H Kawarada, ... Key Engineering Materials 947, 3-8, 2023 | 1 | 2023 |
Hiroshi KAWARADAWaseda UniversityVerified email at waseda.jp
