| The 2016 oxide electronic materials and oxide interfaces roadmap M Lorenz, MSR Rao, T Venkatesan, E Fortunato, P Barquinha, ... Journal of Physics D: Applied Physics 49 (43), 433001, 2016 | 343 | 2016 |
| Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate D Ducatteau, A Minko, V Hoel, E Morvan, E Delos, B Grimbert, ... IEEE Electron Device Letters 27 (1), 7-9, 2005 | 144 | 2005 |
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| AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz A Minko, V Hoel, E Morvan, B Grimbert, A Soltani, E Delos, D Ducatteau, ... IEEE Electron Device Letters 25 (7), 453-455, 2004 | 60 | 2004 |
| Electron-spin resonance of the two-dimensional electron gas in As-InP heterostructures M Dobers, JP Vieren, Y Guldner, P Bove, F Omnes, M Razeghi Physical Review B 40 (11), 8075, 1989 | 59 | 1989 |
| Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators M Faucher, B Grimbert, Y Cordier, N Baron, A Wilk, H Lahreche, P Bove, ... Applied Physics Letters 94 (23), 2009 | 55 | 2009 |
| Study of Au coated ZnO nanoarrays for surface enhanced Raman scattering chemical sensing G Barbillon, VE Sandana, C Humbert, B Bélier, DJ Rogers, FH Teherani, ... Journal of Materials Chemistry C 5 (14), 3528-3535, 2017 | 53 | 2017 |
| High‐purity GaAs layers grown by low‐pressure metalorganic chemical vapor deposition M Razeghi, F Omnes, J Nagle, M Defour, O Acher, P Bove Applied physics letters 55 (16), 1677-1679, 1989 | 45 | 1989 |
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| Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors C Bru-Chevallier, H Chouaib, J Arcamone, T Benyattou, H Lahreche, ... Thin Solid Films 450 (1), 151-154, 2004 | 30 | 2004 |
| Molecular‐beam epitaxial growth of high quality InSb for p‐i‐n photodetectors G Singh, E Michel, C Jelen, S Slivken, J Xu, P Bove, I Ferguson, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 29 | 1995 |
| Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes A Perez-Tomas, E Chikoidze, Y Dumont, MR Jennings, SO Russell, ... Materials Today Energy 14, 100350, 2019 | 28 | 2019 |
| Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films E Chikoidze, DJ Rogers, FH Teherani, C Rubio, G Sauthier, ... Materials Today Physics 8, 10-17, 2019 | 28 | 2019 |
| Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer … S Gautier, T Moudakir, G Patriarche, DJ Rogers, VE Sandana, ... Journal of crystal growth 370, 63-67, 2013 | 23 | 2013 |
| Si-diffused GaN for enhancement-mode GaN MOSFET on Si applications S Jang, F Ren, SJ Pearton, BP Gila, M Hlad, CR Abernathy, H Yang, ... Journal of electronic materials 35, 685-690, 2006 | 23 | 2006 |
| Chemical beam epitaxy growth of GaAs/Ga0. 5In0. 5P heterostructures: growth kinetics, electrical and optical properties JC Garcia, P Maurel, P Bove, JP Hirtz, A Barski Journal of crystal growth 111 (1-4), 578-583, 1991 | 21 | 1991 |
| UVSQ-SAT, a pathfinder cubesat mission for observing essential climate variables M Meftah, L Damé, P Keckhut, S Bekki, A Sarkissian, A Hauchecorne, ... Remote Sensing 12 (1), 92, 2019 | 20 | 2019 |
| Atomic layer-by-layer growth of superconducting Bi–Sr–Ca–Cu–O thin films by molecular beam epitaxy P Bove, DJ Rogers, FH Teherani Journal of crystal growth 220 (1-2), 68-74, 2000 | 20 | 2000 |
| Critical parameters in the molecular beam epitaxy growth of Bi2Sr2Can-1CunOy and (Sr, Ca) mCunOy superconductor thin films DJ Rogers, P Bove, FH Teherani Superconductor Science and Technology 12 (6), R75, 1999 | 20 | 1999 |
| The first fabrication of n-and p-type Ga0. 49In0. 51P/Ga (In) As lattice matched and strained HIGFET structures grown by MOCVD M Razeghi, F Omnes, M Defour, P Maurel, P Bove, YJ Chan, D Pavlidis Semiconductor Science and Technology 5 (3), 274, 1990 | 19 | 1990 |
