Ph. Bove
Ph. Bove
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Cited by
Cited by
The 2016 oxide electronic materials and oxide interfaces roadmap
M Lorenz, MSR Rao, T Venkatesan, E Fortunato, P Barquinha, ...
Journal of Physics D: Applied Physics 49 (43), 433001, 2016
Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
D Ducatteau, A Minko, V Hoel, E Morvan, E Delos, B Grimbert, ...
IEEE Electron Device Letters 27 (1), 7-9, 2005
Molecular beam epitaxial growth of high quality InSb
E Michel, G Singh, S Slivken, C Besikci, P Bove, I Ferguson, M Razeghi
Applied physics letters 65 (26), 3338-3340, 1994
Electron-spin resonance of the two-dimensional electron gas in As-InP heterostructures
M Dobers, JP Vieren, Y Guldner, P Bove, F Omnes, M Razeghi
Physical Review B 40 (11), 8075, 1989
AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz
A Minko, V Hoel, E Morvan, B Grimbert, A Soltani, E Delos, D Ducatteau, ...
IEEE Electron Device Letters 25 (7), 453-455, 2004
Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators
M Faucher, B Grimbert, Y Cordier, N Baron, A Wilk, H Lahreche, P Bove, ...
Applied Physics Letters 94 (23), 233506, 2009
High‐purity GaAs layers grown by low‐pressure metalorganic chemical vapor deposition
M Razeghi, F Omnes, J Nagle, M Defour, O Acher, P Bove
Applied physics letters 55 (16), 1677-1679, 1989
Study of Au coated ZnO nanoarrays for surface enhanced Raman scattering chemical sensing
G Barbillon, VE Sandana, C Humbert, B Bélier, DJ Rogers, FH Teherani, ...
Journal of Materials Chemistry C 5 (14), 3528-3535, 2017
Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors
C Bru-Chevallier, H Chouaib, J Arcamone, T Benyattou, H Lahreche, ...
Thin Solid Films 450 (1), 151-154, 2004
Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1−xP
JC Garcia, P Maurel, P Bove, JP Hirtz
Journal of applied physics 69 (5), 3297-3302, 1991
Molecular‐beam epitaxial growth of high quality InSb for pin photodetectors
G Singh, E Michel, C Jelen, S Slivken, J Xu, P Bove, I Ferguson, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995
Si-diffused GaN for enhancement-mode GaN MOSFET on Si applications
S Jang, F Ren, SJ Pearton, BP Gila, M Hlad, CR Abernathy, H Yang, ...
Journal of electronic materials 35 (4), 685-690, 2006
Chemical beam epitaxy growth of GaAs/Ga0. 5In0. 5P heterostructures: growth kinetics, electrical and optical properties
JC Garcia, P Maurel, P Bove, JP Hirtz, A Barski
Journal of crystal growth 111 (1-4), 578-583, 1991
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer …
S Gautier, T Moudakir, G Patriarche, DJ Rogers, VE Sandana, ...
Journal of crystal growth 370, 63-67, 2013
Critical parameters in the molecular beam epitaxy growth of Bi2Sr2Can-1CunOy and (Sr, Ca) mCunOy superconductor thin films
DJ Rogers, P Bove, FH Teherani
Superconductor Science and Technology 12 (6), R75, 1999
Metal organic molecular beam epitaxy growth of Ga0. 5In0. 5P/GaAs quantum well structures
JC Garcia, P Bove, JP Hirtz
Japanese journal of applied physics 30 (6R), 1186, 1991
Method for making a heterojunction bipolar transistor
J Pelouard, M Lijadi, C Dupuis, F Pardo, P Bove
US Patent 8,519,443, 2013
Atomic layer-by-layer growth of superconducting Bi–Sr–Ca–Cu–O thin films by molecular beam epitaxy
P Bove, DJ Rogers, FH Teherani
Journal of crystal growth 220 (1-2), 68-74, 2000
The first fabrication of n-and p-type Ga0. 49In0. 51P/Ga (In) As lattice matched and strained HIGFET structures grown by MOCVD
M Razeghi, F Omnes, M Defour, P Maurel, P Bove, YJ Chan, D Pavlidis
Semiconductor science and technology 5 (3), 274, 1990
Potential of the FLASH free electron laser technology for the construction of a kW-scale light source for next-generation lithography
EA Schneidmiller, VF Vogel, H Weise, MV Yurkov
Journal of Micro/Nanolithography, MEMS, and MOEMS 11 (2), 021122, 2012
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