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Rosnita Muhammad
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Catalyst-free fabrication of novel ZnO/CuO core-Shell nanowires heterojunction: Controlled growth, structural and optoelectronic properties
MA Khan, Y Wahab, R Muhammad, M Tahir, S Sakrani
Applied Surface Science 435, 718-732, 2018
272018
Spectroscopic properties of Dy3+ doped tellurite glass with Ag/TiO2 nanoparticles inclusion: Judd− Ofelt analysis
MSAM Saidi, SK Ghoshal, R Arifin, MK Roslan, R Muhammad, ...
Journal of Alloys and Compounds 754, 171-183, 2018
212018
Vapor-liquid solid mechanism using gold colloids for the growth of GaAs nanowires
R Muhammad, Z Othaman, S Sakrani, Y Wahab
Malaysian Journal of Fundamental and Applied Sciences 4 (2), 2008
72008
Effect of gas flow rate on structural properties of zinc oxide nanowires grown by vapor-solid mechanism
S Sakrani, N Jamaludin, R Muhammad, Y Wahab, AK Ismail, S Suhaimi, ...
AIP Conference Proceedings 1733 (1), 020040, 2016
52016
Managing performance through reward system
M Sufyan, R Muhammad, M Tahir
Journal of Education & Research for Sustainable Development 1 (1), 1-8, 2013
52013
Morphology and Chemical Composition of InxGa1-xAs NWs Au-assisted Grown at Low Growth Temperature Using MOCVD
E Wibowo, Z Othaman, S Sakrani, AS Ameruddin, D Aryanto, ...
Journal of Applied Sciences 11 (7), 1315-1320, 2011
52011
The Stranski–Krastanov Three Dimensional Island Growth Prediction on Finite Size Model
Z Othaman, LK Boo, S Sakrani, R Muhammad, I Sina
J. Fiz. UTM 3, 1-5, 2008
52008
Growth of ZnO Nanowires by Vapour Solid Mechanism
N Akhiruddin, R Muhammad, Y Wahab, Z Ibrahim
Solid State Phenomena 268, 249-253, 2017
42017
Synthesis of Cu2O and ZnO Nanowires and their Heterojunction Nanowires by Thermal Evaporation: A Short Review
MA Khan, S Sakrani, S Suhaima, Y Wahab, R Muhammad
Jurnal Teknologi, 2014
42014
Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
M Rosnita, W Yussof, I Zuhairi, O Zulkafli, S Samsudi
Sains Malaysiana 41 (9), 1133-1138, 2012
42012
The Stranski? Krastanov three dimensional island growth predication on finite size model (Part I)
Z Othaman, LK Boo, S Sakrani, R Muhammad
J. Fiz. UTM 3, 78-83, 2008
42008
Monitoring the flank wear using piezoelectric of rotating tool of main cutting force in end milling
NHM Tahir, R Muhammad, JA Ghani, MZ Nuawi, CHC Haron
Jurnal Teknologi 78 (6-10), 2016
32016
InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures
R Muhammad, Z Othaman, LK Boo, Y Wahab
Modern Applied Science 2 (3), 2008
32008
Bias voltage dependent structure and morphology evolution of magnetron sputtered YSZ thin film: a basic insight
NA Rusli, R Muhammad, SK Ghoshal, H Nur, N Nayan, SN Jaafar
Materials Research Express 6 (10), 106414, 2019
22019
Morphological and Electrical Characterization of Nickel Oxide-Ytrria Stabilize Zirconia Thin Film Prepared Using Sol Gel Dip Coating Method
NH Amin, R Muhammad, WNW Shamsuri
Journal of Science and Technology 9 (3), 2017
22017
Conductivity of yittria-stabilized zirconia nanostructure electrolyte for solid oxide fuel cell application by using rf magnetron sputtering
SY Jaffar, Y Wahab, R Muhammad, Z Othaman, Z Ibrahim, N Nayan, ...
Solid State Phenomena 268, 352-357, 2017
22017
Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering
AR Nurhamizah, Z Ibrahim, R Muhammad, Y Wahab, S Sakrani
Solid State Phenomena 268, 229-233, 2017
22017
Current-Voltage Characterization of Gallium Arsenide Nanowires Using a Conductive Atomic Force Microscopy
R Muhammad, Y Wahab, Z Othaman, S Sakrani
Advanced Materials Research 1109, 238-242, 2015
22015
Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters
R Muhammad, R Ahamad, Z Ibrahim, Z Othaman
AIP Conference Proceedings 1588 (1), 257-260, 2014
22014
Morphological evolution of ternary InxGa1-xAs nanowires (NWs) grown with Au particle-assisted using vertical chamber MOCVD
E Wibowo, Z Othaman, S Sakrani, AS Ameruddin, D Aryanto, ...
Malaysian Journal of Fundamental and Applied Sciences 6 (2), 2010
22010
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