Ashraful Ghani Bhuiyan

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	All	Since 2019
Citations	2059	614
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i10-index	24	10

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Co-authors

Akio YamamotoUniversity of FukuiVerified email at u-fukui.ac.jp
Dr. Md Tanvir HasanSenior Research Fellow, University of Michigan, Ann Arbor, USAVerified email at umich.edu
Abu Syed Md. Jannatul Islam, PhDAssociate Professor, Dept. of Electrical and Electronic Engineering (EEE), KUET, Khulna-9203, BDVerified email at eee.kuet.ac.bd
Jeongwon Park (JP)Electrical and Biomedical Engineering, University of Nevada Reno, USA, EECS, uOttawa, CanadaVerified email at unr.edu
Md Tawabur Rahman, Ph.D.Professor, Dept. of EEE, Khulna University of Engineering & TechnologyVerified email at eee.kuet.ac.bd
Naim FerdousAssistant Professor, Dept. of EEE, BSMRSTU, Gopalganj, BangladeshVerified email at bsmrstu.edu.bd
Valery Yu. DavydovDr. Sci., Chief Researcher, Ioffe InstituteVerified email at mail.ioffe.ru
Khalid N. AnindyaPostdoctoral Researcher, Department of Physics, McGill UniversityVerified email at mcgill.ca
Md Fahim Al FattahUniversity of Waterloo, CanadaVerified email at uwaterloo.ca
Md Mottaleb Hossain, PhDTechnology Development Engineer at Intel Corporation, NM, USAVerified email at unm.edu
Amit Kumer PodderAssistant Professor, EEE Department, KUET & Graduate Research Assistant, NCSUVerified email at eee.kuet.ac.bd
Md Jahirul IslamProfessor, Khulna University of Engineering & Technology, BangladeshVerified email at eee.kuet.ac.bd
Hossain Mansur Resalat FaruqueGraduate Research Associate, Arizona State UniversityVerified email at asu.edu
Dr Md Azim UllahAcademic Staff (Teaching and Research), Swinburne University of TechnologyVerified email at swin.edu.au
M. Mofazzal Hossain, PhD, SM IEEEPro-Vice Chancellor, Southeast UniversityVerified email at seu.edu.bd
Zahid Hasan MahmoodUniversity of DhakaVerified email at univdhaka.edu
Md Arafat HossainKhulna University of Engineering and Technology; Past: University of SydneyVerified email at eee.kuet.ac.bd

Ashraful Ghani Bhuiyan

Professor of Electrical and Electronic Engineering, Khulna University of Engineering & Technology

Verified email at eee.kuet.ac.bd - Homepage

Semiconductor growth and characterization. III-nitride semiconductors and their devices. High-efficiency solar cells and their m


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Indium nitride (InN): A review on growth, characterization, and properties AG Bhuiyan, A Hashimoto, A Yamamoto Journal of applied physics 94 (5), 2779-2808, 2003	1096	2003
InGaN solar cells: present state of the art and important challenges AG Bhuiyan, K Sugita, A Hashimoto, A Yamamoto IEEE Journal of photovoltaics 2 (3), 276-293, 2012	238	2012
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ... Applied physics letters 83 (23), 4788-4790, 2003	127	2003
Anomalous temperature dependent thermal conductivity of two-dimensional silicon carbide ASMJ Islam, MS Islam, N Ferdous, J Park, AG Bhuiyan, A Hashimoto Nanotechnology 30 (44), 445707, 2019	59	2019
Anisotropic mechanical behavior of two dimensional silicon carbide: effect of temperature and vacancy defects ASMJ Islam, MS Islam, N Ferdous, J Park, AG Bhuiyan, A Hashimoto Materials Research Express 6 (12), 125073, 2019	39	2019
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization MT Hasan, AG Bhuiyan, A Yamamoto Solid-State Electronics 52 (1), 134-139, 2008	34	2008
Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells A Yamamoto, K Sugita, AG Bhuiyan, A Hashimoto, N Narita Materials for Renewable and Sustainable Energy 2, 1-9, 2013	30	2013
High temperature growth of InN on GaP (1 1 1) B substrate using a new two-step growth method AG Bhuiyan, A Yamamoto, A Hashimoto, Y Ito Journal of crystal growth 236 (1-3), 59-65, 2002	30	2002
Refractive index, absorption coefficient, and photoelastic constant: key parameters of InGaAs material relevant to InGaAs-based device performance MS Alam, MS Rahman, MR Islam, AG Bhuiyan, M Yamada 2007 IEEE 19th International Conference on Indium Phosphide & Related …, 2007	28	2007
MOVPE growth of high quality p-type InGaN with intermediate In compositions K Sasamoto, T Hotta, K Sugita, AG Bhuiyan, A Hashimoto, A Yamamoto, ... Journal of crystal growth 318 (1), 492-495, 2011	27	2011
Laser‐Assisted Metalorganic Vapor‐Phase Epitaxy (LMOVPE) of Indium Nitride (InN) AG Bhuiyan, T Tanaka, A Yamamoto, A Hashimoto physica status solidi (a) 194 (2), 502-505, 2002	24	2002
Tunable electronic properties in bismuthene/2D silicon carbide van der Waals heterobilayer JD Sarker, MS Islam, N Ferdous, PP Sarker, AG Bhuiyan, T Makino, ... Japanese Journal of Applied Physics 59 (SC), SCCC03, 2019	20	2019
MOVPE growth of InGaN on Si (111) substrates with an intermediate range of In content AG Bhuiyan, A Mihara, T Esaki, K Sugita, A Hashimoto, A Yamamoto, ... physica status solidi c 9 (3‐4), 670-672, 2012	19	2012
Growth and characterization of epitaxial InN films on sapphire substrate using an ArF excimer laser-assisted metalorganic vapor-phase epitaxy (LA-MOVPE) AG Bhuiyan, T Tanaka, K Kasashima, A Hashimoto, A Yamamoto Japanese journal of applied physics 42 (12R), 7284, 2003	19	2003
Design and performance of inxga1-xn-based mj solar cells MR Islam, MT Hasan, AG Bhuiyan, MR Islam, A Yamamoto IETECH Journal of Electrical Analysis 2 (4), 237-243, 2008	15	2008
Growth mechanism of InN nucleation layers on epitaxial graphene using metal organic vapor phase epitaxy and radio-frequency molecular beam epitaxy AG Bhuiyan, D Ishimaru, A Hashimoto Crystal Growth & Design 20 (3), 1415-1421, 2020	14	2020
Proposal of high performance 1.55 µm quantum dot heterostructure laser using InN MM Hossain, M Abdullah-Al Humayun, MT Hasan, AG Bhuiyan, ... IEICE transactions on electronics 95 (2), 255-261, 2012	13	2012
Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon KN Anindya, MS Islam, J Park, AG Bhuiyan, A Hashimoto Current Applied Physics 20 (4), 572-581, 2020	12	2020
MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content K Sugita, M Tanaka, K Sasamoto, AG Bhuiyan, A Hashimoto, ... Journal of crystal growth 318 (1), 505-508, 2011	11	2011
2DEG properties in InGaN/InN/InGaN‐based double channel HEMTs MT Hasan, MR Kaysir, MS Islam, AG Bhuiyan, MR Islam, A Hashimoto, ... physica status solidi c 7 (7‐8), 1997-2000, 2010	11	2010

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