|Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic|
J Shim, S Oh, DH Kang, SH Jo, MH Ali, WY Choi, K Heo, J Jeon, S Lee, ...
Nature communications 7 (1), 13413, 2016
|High‐performance transition metal dichalcogenide photodetectors enhanced by self‐assembled monolayer doping|
DH Kang, MS Kim, J Shim, J Jeon, HY Park, WS Jung, HY Yu, CH Pang, ...
Advanced Functional Materials 25 (27), 4219-4227, 2015
|An ultrahigh‐performance photodetector based on a perovskite–transition‐metal‐dichalcogenide hybrid structure|
DH Kang, SR Pae, J Shim, G Yoo, J Jeon, JW Leem, JS Yu, S Lee, B Shin, ...
Advanced Materials 28 (35), 7799-7806, 2016
|High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment|
J Shim, A Oh, DH Kang, S Oh, SK Jang, J Jeon, MH Jeon, M Kim, C Choi, ...
Advanced Materials 28 (32), 6985-6992, 2016
|Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane|
DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ...
ACS nano 9 (2), 1099-1107, 2015
|A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique|
SH Jo, DH Kang, J Shim, J Jeon, MH Jeon, G Yoo, J Kim, J Lee, GY Yeom, ...
Advanced Materials 28 (24), 4824-4831, 2016
|Electronic and optoelectronic devices based on two‐dimensional materials: From fabrication to application|
J Shim, HY Park, DH Kang, JO Kim, SH Jo, Y Park, JH Park
Advanced Electronic Materials 3 (4), 1600364, 2017
|Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism|
J Shim, HS Kim, YS Shim, DH Kang, HY Park, J Lee, J Jeon, SJ Jung, ...
Advanced Materials 28 (26), 5293-5299, 2016
|n-and p-type doping phenomenon by artificial DNA and M-DNA on two-dimensional transition metal dichalcogenides|
HY Park, SR Dugasani, DH Kang, J Jeon, SK Jang, S Lee, Y Roh, ...
ACS nano 8 (11), 11603-11613, 2014
|Extremely low contact resistance on graphene through n‐Type doping and edge contact design|
HY Park, WS Jung, DH Kang, J Jeon, G Yoo, Y Park, J Lee, YH Jang, ...
Advanced Materials 28 (5), 864-870, 2016
|Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices|
J Shim, DH Kang, Y Kim, H Kum, W Kong, SH Bae, I Almansouri, K Lee, ...
Carbon 133, 78-89, 2018
|Broad detection range rhenium diselenide photodetector enhanced by (3‐aminopropyl) triethoxysilane and triphenylphosphine treatment|
SH Jo, HY Park, DH Kang, J Shim, J Jeon, S Choi, M Kim, Y Park, J Lee, ...
Advanced Materials 28 (31), 6711-6718, 2016
|Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation|
HY Park, MH Lim, J Jeon, G Yoo, DH Kang, SK Jang, MH Jeon, Y Lee, ...
ACS nano 9 (3), 2368-2376, 2015
|Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction|
KS Kim, YJ Ji, KH Kim, S Choi, DH Kang, K Heo, S Cho, S Yim, S Lee, ...
Nature communications 10 (1), 4701, 2019
|Self-assembled layer (SAL)-based doping on black phosphorus (BP) transistor and photodetector|
DH Kang, MH Jeon, SK Jang, WY Choi, KN Kim, J Kim, S Lee, GY Yeom, ...
ACS Photonics 4 (7), 1822-1830, 2017
|Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe2) Biosensors|
HW Lee, DH Kang, JH Cho, S Lee, DH Jun, JH Park
ACS applied materials & interfaces 10 (21), 17639-17645, 2018
|Ultra-low doping on two-dimensional transition metal dichalcogenides using DNA nanostructure doped by a combination of lanthanide and metal ions|
DH Kang, SR Dugasani, HY Park, J Shim, B Gnapareddy, J Jeon, S Lee, ...
Scientific Reports 6 (1), 20333, 2016
|Stable and Reversible Triphenylphosphine-Based n-Type Doping Technique for Molybdenum Disulfide (MoS2)|
K Heo, SH Jo, J Shim, DH Kang, JH Kim, JH Park
ACS applied materials & interfaces 10 (38), 32765-32772, 2018
|A neuromorphic device implemented on a salmon‐DNA electrolyte and its application to artificial neural networks|
DH Kang, JH Kim, S Oh, HY Park, SR Dugasani, BS Kang, C Choi, R Choi, ...
Advanced Science 6 (17), 1901265, 2019
|Rhenium Diselenide (ReSe2) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique|
J Kim, K Heo, DH Kang, C Shin, S Lee, HY Yu, JH Park
Advanced Science 6 (21), 1901255, 2019